36SOJ Search Results

K6R4004C1D-JC

Abstract: K6R4004V1D K6R4016V1D-J
Contextual Info: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary

pin diagram of 74112

Abstract: ttl 74112 pin diagram of ttl 74112 3B522
Contextual Info: KM684002A CMOS SRAM 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 * (Max.) The KM684002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The

KM68BV4002

Contextual Info: KM68BV4002 BiCMOS SRAM D o cu m e n t Title 512K x8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.

KM68BV4002

Abstract: KM68BV4002J-12 KM68BV4002J-15 36-SOJ ttl 74142
Contextual Info: Advanced Information KM68BV4002 BiCMOS SRAM 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002J-12: 165mA(Max.)

Contextual Info: Preliminary KM684002A CMOS SRAM 5 12K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA (CMOS): 10 mA Operating KM684002A-12 : 200 mA(Max.) KM684002A-15: 190 mA(Max.)

Contextual Info: FrelrmiTrsry CMOS SRAM KM684002B, KM684002BI 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* “ Max. - Low Power Dissipation Standby (TTL) : 40» • (Max.) The KM684002B is a 4,194,304-bit high-speed Static Random

KM68BV4002

Contextual Info: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)

SRAM sheet samsung

Abstract: 400213
Contextual Info: KM 68B4002 BiCMOS SRAM D o cu m e n t Title 512K x8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory Draft Data R em ark Rev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.

K6R4008V1D

Abstract: K6R4016C1D 44-TSOP2
Contextual Info: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary

Contextual Info: PRELIMINARY Preliminary CMOS SRAM K6R4008V1C-C, K6R4008V1C-I Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

K6R4016V1D-J

Contextual Info: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001

Contextual Info: PRELIMINARY Preliminary CMOS SRAM KM68V4002C, KM68V4002CI Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

K6R4016V1D-J

Abstract: K6R4008V1D
Contextual Info: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001

Contextual Info: KM68V4002A CMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20* • Max. Low Power Dissipation Standby (TTL) : 50» • (Max.) (CMOS) : 10««(Max.) Operating KM68V4002A-1 5 : 160»»(Max.) KM68V4002A -1 7 : 155»»(Max.)

Contextual Info: KM684002A CMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 15,17,20* Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) (CMOS): 10«» (Max.) Operating KM684002A- 15 : 170««(Max.) KM684002A-17 : 165*»(Max.)

0603 smt resistor

Abstract: TCON 30 pin interface panasonic
Contextual Info: eZ80F915050MOD eZ80F91 Module Product Specification PS019311-0706 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.zilog.com This publication is subject to replacement by a later edition. To determine whether

300b tube

Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Contextual Info: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM

CY7C1049CV33-12VXI

Abstract: CY7C1049CV33-15ZXI CY7C1049CV33-15VXI CY7C1049CV33-12ZXC CY7C1049CV33 CY7C1049CV33-10VC CY7C1049CV33-10VI CY7C1049CV33-10ZC CY7C1049CV33-10ZI CY7C1049CV33-12VC
Contextual Info: CY7C1049CV33 4-Mbit 512K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1049CV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an

CS8900

Abstract: HFJ11-2450E-L11 tsop4020mm VL-1220-1VC VL1220-1VC ZHX1810
Contextual Info: eZ80F915050MOD eZ80F91 Module Product Specification PS019310-0904 PRELIMINARY ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether

44-SOJ

Abstract: 44TSOP 4Mx1
Contextual Info: H I G H S P E E D C M O S S TAT I C R A M 4M DENSITY • 4M HIGH SPEED STATIC RAM’S WITH ACCESS TIMES FROM 12ns TO 20ns 4M HIGH SPEED CMOS STATIC RAM • • • • • • • • • • • • • • • • • • • • • • • • • •

HC49US25.000M

Abstract: ndk 50MHz mx-38 ndk mx-38 32.768 CS8900 VL-1220-1VC ZHX1810 tsop40.20mm ir receiver smd diode 2 pin C1530
Contextual Info: eZ80F915050MOD eZ80F91 Module Product Specification PS019306-0803 PRELIMINARY ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether

mx-38 32.768

Abstract: CONNECTOR HEADER 25x2 PIN MAIL panasonic goldcap sot 23 PD5 schematic diagram of led monitor EEC-SOHD104V EZ80F92AZ020SC HC49SM AS7C34096-12JC MAX6328UR29-T
Contextual Info: eZ80F920020MOD eZ80F92 Flash Module Product Specification PS018905-1203 PRELIMINARY ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether

EZ80 rectifier

Abstract: 220 39 ethernet 32 pin HC-49S HC49SM IC vertical panasonic IDC50 panasonic goldcap schematic diagram of led monitor SMT RJ45 jack MAX6328UR29-T
Contextual Info: eZ80F920120MOD eZ80F92 Ethernet Module Product Specification PS018605-1203 PRELIMINARY ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether

Contextual Info: CMOS SRAM KM684002B, KM684002BI Document T itle 512Kx8 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. R evision History RevNo. History Rev. 0.0 Initial release with Design Target. Draft Data Remark Jan. 1st 1997