37 SMD TRANSISTOR Search Results

C945 p 331

Abstract: B1-C90/20 TRANSISTOR K1006 siemens MKL T60405-R6131-X037 t60405-s4615-x027 c945 p 331 transistor transistor C5478 siemens PTC C860 T60405-A4220-X060
Contextual Info: Ordering Information Subject Index 5 11 A Chokes and Transformers SMD Transformers Ferrites and Accessories 15 29 37 B Thick-Film Chip Resistors NTC Thermistors PTC Thermistors Varistors Surge Arresters 121 127 143 155 167 C Ceramic Capacitors Film Capacitors

ic smd 851

Abstract: KPA1890 transistor P 24 smd
Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1890 TSSOP-8 Features Unit: mm Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS on 1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 m

Contextual Info: mm/ Features 1. î M M t t Q M D i m m M & r J W X 37ï?o tä^cDämmm 2. ^ y y v o y ^ - i ^ ^ y i j y 3. J 7 D - [ i ^ m hs 1. Developed as a chip-type SMD Photo-transistor 2. Automatic mounting by chip mounter available 3. Reflow soldering available o

transformer egston

Abstract: 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical
Contextual Info: AN2844 Application note 15 W wide range SMPS for metering based on ESBT STC03DE220HV and L6565 PWM controller 1 Introduction This document describes a 15-W flyback switched mode power supply SMPS application that uses an emitter-switched bipolar transistor (ESBT™) switch (STC03DE220HV) and

COIL metal detector schematic

Abstract: SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04
Contextual Info: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V

Contextual Info: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V

transistor 2N3906 smd 2A SOT23

Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23
Contextual Info: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts

pin configuration transistor BC547 smd packaging

Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
Contextual Info: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors

bc327 smd

Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
Contextual Info: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A

2SA1369

Abstract: G marking smd transistor 1A 9 g400h smd transistor 2sc3439 transistor smd marking H 2SC3439 SMD BR BR SMD IC 2SC3439 1a
Contextual Info: Transistors SMD Type Plunger Drive Applications 2SA1369 Features High Collector Current ICM = -3A, IC = -1.5A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage

Contextual Info: Transistors IC SMD Type Product specification KDB6030L TO-263 1 .2 7 -0+ 0.1.1 Features +0.2 4.57-0.2 Low Crss typical 175 pF . 5 .2 8 -0+ 0.2.2 Fast switching speed. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L TO-263 1 .2 7 -0+ 0.1.1 Features +0.2 4.57-0.2 Low Crss typical 175 pF . 5 .2 8 -0+ 0.2.2 Fast switching speed. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

C5750X7R1H106M

Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
Contextual Info: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

5n20v

Contextual Info: Transistors SMD Type Dual N-Channel Enhancement Mode MOSFET 5N20V TSSOP-8 • Features Unit: mm ● RDS ON ≤40mΩ @VGS=4.5V ● RDS(ON)≤45mΩ @VGS=2.7V D1 D2 S1 S2 S1 S2 D1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2

smd transistor 43t

Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
Contextual Info: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018

4P04L04

Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
Contextual Info: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

Contextual Info: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

4P04L08

Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
Contextual Info: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

smd 1C

Abstract: 1c smd transistor 1b smd transistor SMD Transistor nc KDS8928A SMD Transistor 1c 1130 pch Dual N & P-Channel MOSFET
Contextual Info: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS ON = 0.030 RDS(ON) = 0.038 @ VGS = 4.5V @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V

SMD TRANSISTOR MARKING 76

Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
Contextual Info: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.

4P0409

Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
Contextual Info: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

IPP120P04P4-04

Abstract: 340ua IPI120P04P4-04 4P04
Contextual Info: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

2SK3560

Contextual Info: Transistors IC SMD Type Silicon N-channel power MOSFET 2SK3560 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching