374MA Search Results

Contextual Info: FUJITSU M I C R O E L E C T R ON I C S FU JITSU 374ma 23E D E e Ä i6 3 8 4 ^ B I’^ Ä i BIPOLAR,RANDOM^ ES M GOOöSbS 4 M BM 10480A-8 è i ; «• m - % May 1988 Edition 1.0 - r v o s 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A 1$ a fully decoded 16384-blt ECL read/w rite random access

az8462

Abstract: az8462s AZ8462-48 AZ8462P2-5
Contextual Info: AZ AZ8462 MICROMINIATURE POLARIZED RELAY FEATURES • SMT and DIP mounting available • Microminiature size: up to 50% less board area than previous generation telecom relays • High dielectric and surge voltage: 2.5 KV surge per Bellcore TA–NWT–001089

Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U B3E D • 3 7 4 ì 7 bS O O P ä l S S ñ ■ ECfel024 -BIH ^S: M BM 10422A-5 BIPOLARRANDOIU» M BM 10422A-7 T -% -Z 3 -0 S ApriT 1986 Edition 3.0 1024-BIT BIPOLAR ECL RANDOM ACCESS M EM O RY The Fujitsu M B M 10422A is fully decoded 1024-bit E C L read/write random

Contextual Info: FUJITSU MICROELECTRONICS 3 IE D 374=17^2 OGlbOêfl 4 • FMI irr MAGNETIC DISK HEAD AMPLIFIER The Fujitsu MB 4117-4 and MB 4118-4 are magnetic disk head amplifiers w ith Zener'Zapped w rite current sourse for 4-channel head, MB 4117-6 and MB 4118-6 for 6-channel.

TRANSISTOR PHL 641

Abstract: MAX1987 2 Input NAND Schmitt Trigger with Open Drain Outp mb62xxxx transistor 1PN M0623 transistor H6C LCC-48C-A01 BO 180 gq102b7
Contextual Info: s ? CO LU • • Œ S ü j u c/> » I S £ œ Dü< i I CO ÜJ o sen • • ú 1= S -a s s e s s s 9 s 3 <*- a2 *1 • i » I I 1 I ! i ! I i 1 1 se 1 § § i 1 § 1 1 5 2 • i D x i83 I I 03 CD X X 3 X 5 i i S 1 ó 1 1 « 5 ó 3 8 •- »- MB62XXXX MBSOxxxx

24cc02

Abstract: 100474A-5 Fujitsu b-1100
Contextual Info: FU JITSU MI CRO E L E C T R ON I C S 3 7 4=i7fciE 0000235 b 23E D n ~ -*4 fe -Z 3 > -0 8 FU JIT SU EC0Ç4O96-BlllfëÇf BIPOËAR/ RANDOMí ACCES£|MEMOF@É MBM 100474A-5 MBM 100474A-7 June 1987 Edition 1.Û 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100474A is fu lly decoded 4096-bit ECL read/write random

Contextual Info: User Guide for FEBFL7730_L20L008A 8.4W LED Bulb Using FL7730 Featured Fairchild Product: FL7730 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2012 Fairchild Semiconductor Corporation

fujitsu DIP-42

Abstract: HB8850 MB8855A 412e fujitsu DIP-42 microcomputer MB8850 Q01213
Contextual Info: FUJITS U M I C R O E L E C T R O N I C S 2BE D 3 7 MT7b2 0012CH1 b FUJITSU TM335-A871: January 1987 CMOS SINGLE-CHIP 4-BIT MICROCOMPUTER MB8851M The Fujitsu MB8850 series CMOS single-chip 4-bit microcomputer family is a CMOS version of the con­ ventional MB8840 series. Its architecture and in­

Contextual Info: FUJITSU MICROELECTRONICS E3E D • Ä fö S ffl^ B IP Ö E A FUJITSU £f lcSELIPTIMED RANDOM ACCESS. MEMOR^^^i 37M=i?fc,2 O O O Ô S ? 6! 5 ■ MBM100476RR-9 '" P M t r Z V O 'S 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY December, 1988 Edition 1.0 The Fujitsu MBM100476RR-9 Is fully decoded 4096-blt ECL salt-timed read/write

Samwha Electrolytic capacitor 47uf 400v

Contextual Info: User Guide for FEBFL7730_L20H008A 8.4W LED Bulb Using FL7730 Featured Fairchild Product: FL7730 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2012 Fairchild Semiconductor Corporation

Contextual Info: AZ AZ8462 MICROMINIATURE POLARIZED RELAY FEATURES • SMT and DIP mounting available • Microminiature size: up to 50% less board area than previous generation telecom relays • High dielectric and surge voltage: 2.5 KV surge per Bellcore TA–NWT–001089

MBM27C1000-20

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 374=!7b2 OOCHEIO b 23E D CMOai.048,576.BI UV ERASABLE REAI ONLY MEMOR MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 April 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C1000 EPROM Is a high speed read-only static mem ory th a t Is

Contextual Info: FUJITSU MICROELECTRONICS S3E D 37417ba 000ä31? fi 020100019102010100010200010002010002 E C m i6 3 8 4 - B r a » F U J IT S U BIPOLARRANDOMi ACCESSMEMORW MBM 100480-15 MBM 100480-25 September 1984 Edition 3,0 T ^ w -zv o s 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 23E D • 374*171*2 OQOaibT fi ■ ECtL4096&#39;-BIT%í¿i BIPOLARRANDOM* ACCESS. MEMORY MBM10470A-7 August 1988 Edition 1,0 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10470A Is a fully decoded 4096-blt ECL read/w rite random access

transistor bL P09

Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
Contextual Info: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its

up down counter using IC 7476

Abstract: full adder using Multiplexer IC 74151 74154 shift register IC sk 7443 full adder circuit using ic 74153 multiplexer DN 74352 full adder using ic 74138 74183 adder pin function of ic 74390 7478 J-K Flip-Flop
Contextual Info: FUJITSU MICROELECTRONICS FUJITSU 37417bH 0010SÔ3 23E D MB65XXXX MB66XXXX MB67XXXX AV CMOS SERÍES GATE ARRAYS ~ June 1986 Edition 2.0 : T - 4 2 - n - o °i DESCRIPTION S The Fujitsu MB65xxxx/MB66xxxx/MB67xxxx family are a series of high performance CMOS gate arrays designed to provide high

Contextual Info: FUJITSU MICROELECTRONICS 3 7 4 ci7bH Q 0 0 Ö 3 7 7 23E D EC fâ63 8 & B fllS BIPOLAR; RANDO ACGESSiriÄEMÖEf F U JIT S U 4 M B M 1 0 0 4 8 4 A - 1 0 'T >/ l l -> -> r\ 0 August 1988 I'Hb'Cii “O S Editlon 20 16384-BIT BIPPOLAR ECL RANDOM ACCESS M EM O RY

Contextual Info: FUJITSU M IC RO EL E C T R ON I C S F U J IT S U 23E D • 374=171=2 G0Gfl34S 2 ECb 16384-BITSfe BIPOLAR, RANDOMI ACCESS M EM O R Ò 'T - M f c ^ - O S 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu M B M 10484A is fully decoded 16384-bit E C L read/write random

transformer 230V to 12V 500mA

Abstract: transformer 230V 12V 500mA transformer 230v to 9v 300mA transformer 500mA 12v Transformer 115V 24V 10va transformer 230V 16V 350mA transformer 230v to 5v 3VA transformer 230V to 17V 300mA 9v 300mA transformer 230V to 12V 500mA
Contextual Info: DB LECTRO Inc. • • • LOW PROFILE ENCAPSULATED TRANSFORMER Power – 2VA to 70VA Dielectric Strength – 3750Vrms Primary – Dual primary 115V/230V 50/60Hz Secondary – Series or parallel Insulation Class – Class F (155°C) Safety Approvals – UL506, CSA C22.2 #6

SCR 4A 400 V

Contextual Info: SGX-41F SOLID STATE RELAY 4 AMPS 48 TO 400 VRMS FEATURES • • • • • • • • Photo isolation Up to 800V blocking voltage Both zero cross or random turn-on High surge capability Built-in snubber UL, CUR file E43203 SCR or Triac Output Circuitry

Contextual Info: FUJITSU M I CRO EL EC TR ON IC S FUJITSU S3E D • 3 7 ‘H 7 t a GD07417 7 ■ MB85235-10 IH X 9 DRAM MODULE MB85235-12 1,048,576 x 9 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE The F u j i t s u MB85235 is a fully decoded, dynamic CMOS r a n d o m access m e mory module w i t h eight MB81C1000, in

APW7262

Contextual Info: APW7262 3MHz Synchronous Switch-Mode Battery Charger with Full USB Compliance and USB-OTG Boost Regulator Features General Description • Charge Faster Than Linear Charger The APW7262 combine switch-mode battery charger and • 3MHz with 0% to 99.5% Duty Cycle Synchronous

Contextual Info: TN-49-04: Calculating Memory System Power for RLDRAM II Introduction Technical Note Calculating Memory System Power for RLDRAM II Introduction With a unique eight-bank architecture optimized for high frequency and ultra-low random access times, Micron’s reduced latency DRAM RLDRAM® II addresses the high