37MEV Search Results

Contextual Info: 3.25-5 Watt Hybrid Features SINGLE OUTPUT DEVICES • Rad Hard: TID > 25kRad Si • No SEE: LET > 37MeV*cm2/mg • Specifically designed for redundant or individual space applications • Completely self contained Thick Film Hybrid DC-DC Converter • Built-in EMI input filter meets

Contextual Info: 7.5-20 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 25kRad Si • No SEE: LET > 37MeV*cm2/mg • Specifically designed for redundant or individual space applications • Completely self contained Thick Film Hybrid DC-DC Converter • No external filter caps required

Contextual Info: 3.25-6.5 Watt Hybrid Features SINGLE OUTPUT DEVICES • Rad Hard: TID > 25kRad Si • No SEE: LET > 37MeV*cm2/mg • Specifically designed for redundant or individual space applications • Completely self contained Thick Film Hybrid DC-DC Converter • No external filter caps required

Contextual Info: 32.5-80 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 25kRad Si • No SEE: LET > 37MeV*cm2/mg • Specifically designed for redundant or individual space applications • Completely self contained Thick Film Hybrid DC-DC Converter • No external filter caps required

Contextual Info: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

FSGYE130R4

Abstract: Rad Hard in Fairchild for MOSFET 2E12 FSGYE130D1 FSGYE130R3
Contextual Info: FSGYE130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

2E12

Abstract: FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R Rad Hard in Fairchild for MOSFET
Contextual Info: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
Contextual Info: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

1E14

Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET
Contextual Info: FSPYC264R, FSPYC264F Data Sheet 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or

2E12

Abstract: FSYE913A0D FSYE913A0D1 FSYE913A0D3 FSYE913A0R FSYE913A0R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYE913A0D, FSYE913A0R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: FSPL130D1 FSPL130R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSPL130R, FSPL130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

2E12

Abstract: FSF150D FSF150D1 FSF150D3 FSF150R FSF150R1 FSF150R3
Contextual Info: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

FSGYC260R3

Abstract: FSGYC260R4 1E14 2E12 FSGYC260D1 FSGYC260R Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low

1E14

Abstract: 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

LSE B3 transformer

Abstract: smd diode 44a LSE B3 LSE B3 transformer datasheet LSE B4 transformer 1E14 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4
Contextual Info: FSGYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds erpoon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or

FSL110D1

Abstract: 2E12 FSL110D FSL110D3 FSL110R FSL110R1 FSL110R3
Contextual Info: FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FSGJ264R3 equivalent

Abstract: 1E14 2E12 FSGJ264D1 FSGJ264R FSGJ264R3 FSGJ264R4
Contextual Info: FSGJ264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

mosfet for power electronic

Abstract: 2E12 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 Rad Hard in Fairchild for MOSFET 12v 10A electronic transformer
Contextual Info: FSS913A0D, FSS913A0R Data Sheet 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3 diode vg 902 c2
Contextual Info: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

1E14

Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1
Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Formerly available as type TA17698. • 7A, 250V, rDS ON = 0.460Ω Description • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

1E14

Abstract: 2E12 FSS923A0D FSS923A0D1 FSS923A0D3 FSS923A0R FSS923A0R1
Contextual Info: FSS923A0D, FSS923A0R Data Sheet 7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.