38 SOT 23 Search Results

Contextual Info: UTC BC817 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. Sourced from Process 38. 2 1 3 SOT-23 1: EMITTER 2: BASE

BC817

Abstract: BC817-25 BC817-40
Contextual Info: UTC BC817 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. Sourced from Process 38. 2 1 3 SOT-23 1: EMITTER 2: BASE

BC817-25

Abstract: BC817-40
Contextual Info: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

WC SOT23-3

Abstract: 6C t marking code sot 23 SOT-23 6C 6B SOT23-3 FAIRCHILD SOT-23 MARK 30 sot23 mark code e2
Contextual Info: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

Contextual Info: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 Mark: 6B. / 6C. B NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

transistor R2A

Abstract: a38 TRANSISTOR
Contextual Info: PNP small signal transistor Die no. A-38 These epitaxial planar PNP silicon transistors are gold doped. Dimensions Units : mm Features • available in the following packages: — SST3 (SST, SOT-23) — SMT3 (SMT, SC-59), see page 300 • collector-to-emitter breakdown

Contextual Info: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.

BC818

Contextual Info: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.

SOT-23 MARKING U1

Abstract: BCX19 MARKING U1
Contextual Info: BCX19 BCX19 NPN Medium Power Transistor 3 • This device is designed for general purpose amplifiers. • Sourced from process 38. 2 SOT-23 Marking: U1 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage

Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features Matching Applied GaAs HBT Typical Gmax, OIP3, P1dB @ 5V,270mA GaAs MESFET 23 21 Si BiCMOS GaAs pHEMT Si CMOS 38 17 13 11 Si BJT 7 5 InP HBT

BCX19

Abstract: mark u1
Contextual Info: BCX19 BCX19 NPN Medium Power Transistor 3 • This device is designed for general purpose amplifiers. • Sourced from process 38. 2 1 SOT-23 Mark: U1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage

sot23 mark code e2

Abstract: mark PD sot-23 BC817 BC818-25 BC818-40 FAIRCHILD SOT-23 MARK 30
Contextual Info: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.

BC818-25

Abstract: BC818-40 BC817 Fairchild Semiconductor - Process
Contextual Info: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.

BC817-25

Abstract: BC817-40 bc817 mark
Contextual Info: BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

Contextual Info: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 O K I electronic components_ KGF1633_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

KGF1633

Abstract: zo 607
Contextual Info: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 OKI electronic components_ KGF1 6 3 3 _ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

FA38SA50LCP

Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

KGF1284

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0027-38-72 ¡ electronic components KGF1284 ¡ electronic components KGF1284 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with

KGF1313

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0029-38-72 ¡ electronic components KGF1313 ¡ electronic components KGF1313 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with

Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

KGF1323C

Abstract: DCS1800 KGF1323
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0031-38-72 ¡ electronic components KGF1323C ¡ electronic components KGF1323C Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1323C, housed in a SOT-89 type plastic-mold package, is a KGF1323 based discrete

"SOT-227" dimensions

Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

KGF1323F

Abstract: MARKING TACS SOT GaAs FET sot89
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0032-38-72 ¡ electronic components KGF1323F ¡ electronic components KGF1323F Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1323F, housed in a SOT-89 type plastic-mold package, is a KGF1323-based discrete