380* FAIRCHILD Search Results

fda16n50_f109

Abstract: FDA16N50-F109
Contextual Info: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 mΩ Features Description • RDS on = 380 mΩ (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

fdpf16n50t

Contextual Info: FDP16N50 / FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 mΩ Features Description • RDS on = 380 mΩ (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

BD376

Abstract: bd379
Contextual Info: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted

BD380

Abstract: BD375 BD376 BD377 BD378 BD379
Contextual Info: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted

BD376

Abstract: TO-126 fairchild BD375 BD37810STU
Contextual Info: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted

60V 60A TO-252 N-CHANNEL

Abstract: 60V 60A TO-252 FDB2552 FDP3652 FDB2532 SAS 251 HUFA75623P3 TO-251 fairchild 30K OHM FDP3632
Contextual Info: www.fairchildsemi.com Americas Customer Response Center Fairchild Semiconductor 222 West Las Colinas Boulevard Suite 380 Irving, TX 75039 Tel: 888-522-5372 Fax: 972-910-8036 China Fairchild Semiconductor Hong Kong Ltd. Shenzhen Representative Office Room 3107, Shun Hing Square

Contextual Info: FQA19N60 N-Channel QFET MOSFET 600 V, 18.5 A, 380 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQA19N60 N-Channel QFET MOSFET 600 V, 18.5 A, 380 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

NL-4823

Abstract: semelec CHEROKEE INTERNATIONAL sunbank corp pr ste 1205 G Samsung Praha SRI Rev 1_0
Contextual Info: Fairchild Semiconductor World Wide Sales Offices AMERICAS MEXICO Fairchild Semiconductor Av. Vallarta #6503 Flr. 14 Col. Cd Granjas Zapopan Jalisco 45010 Mexico Tel: 52-3-1100017 Fax: 52-3-1101878 TEXAS Customer Response Center Fairchild Semiconductor 222 West Las Colinas Blvd., Ste. 380

FQA19N60

Abstract: 62mh
Contextual Info: FQA19N60 N-Channel QFET MOSFET 600 V, 18.5 A, 380 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing

Contextual Info: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching

488X380

Abstract: CCD222 Contact image sensor fairchild
Contextual Info: LDPAL Fairchild Imaging Sensors CCD 222 488X380-Element Area Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 185,440 sensing elements on a single chip Available horizontal resolution: 380 elements per line Available vertical resolution: 488 lines

Contextual Info: FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

schott optical glass

Contextual Info: Sensors Fairchild Imaging Sensors _ _ CCD 222 4 8 8 X 3 8 0 -Element Area Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 185,440 sensing elements on a single chip Available horizontal resolution: 380 elements per line Available vertical resolution: 488 lines

BD376

Contextual Info: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD375, BD 377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 50 V : BD378 - 75 V : BD380 - 100 V - 45 V : BD378

MP1580

Abstract: MP1580HS amplifier 5.1 surrounding system circuit diagram ic MP1580 CDH74 CR75 EV0007 MP1580HP
Contextual Info: MP1580 2A 380 KHz Step Down Converter Monolithic Power Systems General Description Features The MP1580 is a monolithic step down switch mode converter with a built in internal power MOSFET. It achieves 2A continuous output current over a wide input supply range with

MP1583

Abstract: pin diagram of ic 7480 amplifier 5.1 surrounding system circuit diagram ic MP1580 MP1580 MP1580HS PanJit Semiconductors CDH74 CDRH104R CDRH5D28
Contextual Info: MP1580 2A 380 KHz Step Down Converter Monolithic Power Systems General Description Features The MP1580 is a monolithic step down switch mode converter with a built in internal Power MOSFET. It achieves 2A continuous output current over a wide input supply range with

Contextual Info: FCB11N60 N-Channel SuperFET MOSFET 600 V, 11 A, 380 mΩ Features Description • 650V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology

Wide Input 3A Step Down Converter

Abstract: CR75 DMS1073AN DMS1073AS Rectifier diode IN4148
Contextual Info: DMS1073 DMS 3A, 23V, 380 – 450 kHz Step-Down Converter DESCRIPTION FEATURES The DMS1073 is a step-down regulator with a built in internal Power MOSFET. It achieves 3A continuous output current over a wide input supply range with excellent load and line regulation.

Contextual Info: FCPF11N60F N-Channel SuperFET FRFET® MOSFET 600 V, 11 A, 380 mΩ Features Description • 600 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology