380US Search Results

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Contextual Info: CS223-4M CS223-4N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 4 AMP SILICON SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

APT36GA60B

Abstract: APT36GA60S MIC4452 c 1853
Contextual Info: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

S6065K

Abstract: JESD22-A101 JESD22-A102 TO-218x Sxx65J
Contextual Info: Teccor brand Thyristors 65 / 70 Amp Standard SCRs Sxx65x & Sxx70x Series Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes of current at less than 1.5V potential.

quadrac

Abstract: triac and diac TO-220L quadracs diac 400V 10A alternistor "application note" 400v 15A triac teccor triac application notes JESD22-A101 JESD22-A102
Contextual Info: Teccor brand Thyristors 4 / 6 / 8 / 10 / 15 Amp Quadracs QxxxxLTx Series The Quadrac is an internally triggered Triac designed for AC switching and phase control applications. It is a Triac and DIAC in a single package, which saves user expense by eliminating the need for separate Triac and DIAC

APT28GA60BD15

Abstract: APT6017LLL MIC4452
Contextual Info: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT28GA60K

Abstract: MIC4452
Contextual Info: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

teccor triac application notes

Abstract: alternistor triac 263 d alternistor "application note" TRIAC 226 b triac 101 amps 400v 15A triac triac 216 12 amp triac heat control TRIAC 226 a
Contextual Info: Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor High Commutation Triacs Qxx15xx & Qxx16xHx Series Description Standard type devices normally operate in Quadrants I & III triggered from AC line. Alternistor type devices only operate in quadrants I, II, & III

SD15

Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT

APT68GA60B

Abstract: APT68GA60S MIC4452
Contextual Info: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT10035LLL

Abstract: APT46GA90JD40 MIC4452 max4170
Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

transistor 206

Abstract: 2sb857
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR „ DESCRIPTION Low frequency power amplifier. *Pb-free plating product number: 2SB857L „ ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-A-K 2SB857L-x-T6C-A-K

Contextual Info: 2SD882 PNP Type Elektronische Bauelemente Epitaxl Planar Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 D E Description A S1 The 2SD882 is suited for the output stage of 0.75W audio, voltage requlator, and relay driver.

FREDFET

Contextual Info: APT4F120S 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 95V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Ultra Low VCE(SAT) 0.5V @ IC / IB = 3.5A / 40mA Excellent DC current gain characteristics

Contextual Info: Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS V -20 Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V Descriptions SOT-23 D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)

APT64GA90B

Abstract: MIC4452 DIODE 76A
Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

GMBT1015

Abstract: BT101
Contextual Info: 1/2 GM BT1015 P NP E PITAXI AL P L ANAR T RANS ISTO R Description The GMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Package Dimensions SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60

GMPSA27

Contextual Info: CORPORATION G M P S A2 7 ISSUED DATE :2004/08/12 REVISED DATE :2004/11/29B NPN SILICO N DARLING TON TRANSISTO R Description The GMPSA27 is designed for darlington applications requiring extremely high current gain at collector to 500mA. Package Dimensions

G2N4401

Abstract: G2N4403
Contextual Info: CORPORATION G2N4401 ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B NP N E PITAX I AL PLANAR T RANSI STOR Description The G2N4401 is designed for general purpose switching and amplifier applications. Features *Complementary to G2N4403 *High Power Dissipation: 625mW at 25

teccor triac application notes

Abstract: Q6016RH4 TRIAC 226 b triac 263 d triac 216 400v 16A triac alternistor "application note" JESD22-A101 triac symbol TO-220L
Contextual Info: Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor High Commutation Triacs Qxx15xx & Qxx16xHx Series ® Description 15 Amp and 16 Amp bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,

GL965

Abstract: GL96
Contextual Info: ISSUED DATE :2004/04/25 REVISED DATE :2004/12/08B GL965 NP N E PITAX I AL PLANAR T RANSI STOR Description The GL965 is designed for use as AF output amplifier and flash unit. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10

GMA06

Contextual Info: CORPORATION G M A0 6 ISSUED DATE :2004/05/28 REVISED DATE : NPN SILICON TRANSISTOR Description The GMA06 is Amplifier Transistor. Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J