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    388 TRANSISTOR Search Results

    388 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    388 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a113z

    Abstract: 94S-811-C113Z UMG10N FMA10A IMB17A UMA10N 96-388-A113Z
    Text: Transistors UMA10N / FMA10A / IMB17A UMG10N 96-388-A113Z (94S-811-C113Z) 590


    Original     		PDF UMA10N FMA10A IMB17A UMG10N 96-388-A113Z) 94S-811-C113Z) a113z 94S-811-C113Z UMG10N IMB17A 96-388-A113Z

    2.4 agc 130 watts power amplifier schematic

    Abstract: balanced microphone inside schematic PBL3726 microphone priority circuit Sound Design hearing G7 mic BD132 PBL38813 PBL38814 Signal Path Designer
    Text: PRELIMINARY May 1998 PBL 388 14 Voice - switched 2-channel Circuit with loudspeaker amplifier Key Features Description. The PBL 388 14 contains all the necessary circuitry, amplifiers, detectors, comparator and control functions to implement a high performance voice switched


    Original     		PDF S-164 14/1N 14/1SO 14/1SO 2.4 agc 130 watts power amplifier schematic balanced microphone inside schematic PBL3726 microphone priority circuit Sound Design hearing G7 mic BD132 PBL38813 PBL38814 Signal Path Designer

    PBL3853

    Abstract: circuit diagram for simple IR receiver
    Text: January 1998 PBL 388 13 Voice-switched Speakerphone Circuit with built in loudspeaker amplifier Description. Key Features The PBL 388 13 contains all the necessary circuitry, amplifiers, detectors, comparator and control functions to implement a high performance, voice-switched,


    Original     		PDF S-164 13/1N 13/1SO 13/1SO PBL3853 circuit diagram for simple IR receiver

    fmg5a

    Abstract: A143E C124E A124e a124* transistor c123* transistor transistor PNP A124e C123J a144* transistor TRANSISTOR a41
    Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors UMA10N / FMA10A / IMB17A UMG10N (96-388-A113Z) (94S-811-C113Z) 590 Transistors Emitter common (dual digital transistors) UMA11N / FMA11A FFeatures 1) Two DTA143Z chips in a UMT or


    Original     		PDF 94S-389-A41) 94S-398-C41) UMA10N FMA10A IMB17A UMG10N 96-388-A113Z) 94S-811-C113Z) UMA11N FMA11A fmg5a A143E C124E A124e a124* transistor c123* transistor transistor PNP A124e C123J a144* transistor TRANSISTOR a41

    388 transistor

    Abstract: transistor 388 transistor 388
    Text: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets Series 388, 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. • Two 8 pin versions feature pin centers on .200” or .230” circle. • Series 917 uses MM #1705 receptacles


    Original     		PDF O-100 O-100 917-XX-103-41-005000 917-XX-104-41-005000 917-XX-108-41-005000 917-XX-208-41-005000 917-XX-210-41-005000 388-XX-102-11-740800 388-XX-102-11-740799 EIA-481: 388 transistor transistor 388 transistor 388

    sysmac s6

    Abstract: omron plc cs example program A20011 IR0103 OMRON C500 programming manual AWG16 AWG22 AWG28 IEC60947-1 IEC60947-3
    Text: DIC182 BLACK Operating Procedures Communications User's Manual Industrial Devices and Components Division H.Q. Measuring Components Department OMRON EUROPE B.V. Wegalaan 67-69, NL-2132 JD Hoofddorp The Netherlands Tel: 31 2356-81-300/Fax: (31)2356-81-388


    Original     		PDF DIC182 NL-2132 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 10-8391-3005/Fax: sysmac s6 omron plc cs example program A20011 IR0103 OMRON C500 programming manual AWG16 AWG22 AWG28 IEC60947-1 IEC60947-3

    388 transistor

    Abstract: transistor 388 transistor sockets 104410
    Text: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets Series 388, 917 • Series 917 TO package sockets are available in 3,4,8 and 10 pins. • Two 8 pin versions feature pin centers on .200” or .230” circle. • Uses Mill-Max # 1705 pin, see page 137 for details.


    Original     		PDF O-100 917-XX-103-41-005000 917-XX-104-41-005000 917-XX-108-41-005000 917-XX-208-41-005000 917-XX-210-41-005000 388-XX-102-11-740800 388-XX-102-11-740799 EIA-481: 388 transistor transistor 388 transistor sockets 104410

    2SJ626

    Abstract: 5M15A nec 556
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)


    Original     		PDF 2SJ626 2SJ626 5M15A nec 556

    marking XN

    Abstract: nec 556
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)


    Original     		PDF 2SJ626 2SJ626 marking XN nec 556

    82558B

    Abstract: c65 004 82555 623377-001 BD109 heartbeat sensor intel 82555 lan transistor intel desktop mother board service manual 82558-B
    Text: Alert on LAN* Design Guide Application Note AP-388 Revision 1.1 July 1998 Document Number: 703222-002 Revision Date Revision Feb. 1998 1.0 July 1998 1.1 Description First release • Replaced Figure 3. "Overview of BIOS Support for Alert on LAN" with an


    Original     		PDF AP-388) 0101AAA 23-Jan-1998 82558B c65 004 82555 623377-001 BD109 heartbeat sensor intel 82555 lan transistor intel desktop mother board service manual 82558-B

    Untitled

    Abstract: No abstract text available
    Text: DU28200M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)388# Minimum Operating Temp (øC)


    Original     		PDF DU28200M

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline 3SK296 Absolute Maximum Ratings Ta = 25°C Item Symbol


    Original     		PDF 3SK296 ADE-208-388 Hitachi DSA002759

    3SK296

    Abstract: Hitachi DSA00397 transistor ECG 152
    Text: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain


    Original     		PDF 3SK296 ADE-208-388 3SK296 Hitachi DSA00397 transistor ECG 152

    transistor 91 330

    Abstract: 388-XX-102-11-740800
    Text: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets 0,38 0,64 0,25 0,46 2,18 2,79 3,68 0,51 4,19 3,18 ● Series 917 TO package sockets are available in 3,4,8 and 10 pins. ● Two 8 pin versions feature pin centers on 5,08 or 5,84 circle. ● Uses Mill-Max # 1705 pin, see


    Original     		PDF 917-XX-103-41-005000 917-XX-104-41-005000 917-XX-108-41-005000 917-XX-208-41-005000 917-XX-210-41-005000 917-XX-XXX-41-005000 917-13-XXX-41-005100 388-XX-102-11-740800 EIA-481: 388-XX-102-11-740799 transistor 91 330 388-XX-102-11-740800

    MJ3001 equivalent

    Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc


    Original     		PDF MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement

    LB 11911

    Abstract: 1SS99 TA8709 ta8710 C984 Z-636 2N6467 2N6468 T0-213AA TO213AA
    Text: _ QÎ 3875081 G E SOLID STATE dT 01E , • File N um b er |3 ö 7S0 ö 1 17441 D 0017441 1 ~ S '? General-Purpose Power Transistors 388 2N6467, 2N6468 Silicon P-N-P « Medium-Power Transistors


    OCR Scan     		PDF 2N6467, 2N6468 T0-213AA RCA-2N6467 2N6468Aare O-213AA TA8710, TA8709, LB 11911 1SS99 TA8709 ta8710 C984 Z-636 2N6467 2N6468 T0-213AA TO213AA

    nrf 0

    Abstract: Ericsson PBL
    Text: ERICSSON ^ Preliminary August 1997 PBL388 11/1 Voice-switched Speakerphone Circuit Description The PBL 388 11/1 contains all the necessary circuitry, amplifiers, detectors, comparators and control functions to implement a high performance, voice-switched,


    OCR Scan     		PDF PBL388 1522-PBL S-164 nrf 0 Ericsson PBL

    PBL38814

    Abstract: No abstract text available
    Text: ERICSSON ^ Preliminary July 1997 PBL388 14 Voice-switched Speakerphone Circuit Key Features Description The PBL 388 14 contains all the necessary circuitry, amplifiers, detectors, comparators and control functions to implement a high performance, voice-switched,


    OCR Scan     		PDF PBL388 1522-PBL S-164 PBL38814

    2SB541

    Abstract: 2SD388 C14A 2SD388 A 2sd388/2sb541 251C audio amplifier 50w 50v
    Text: 2SD 388/2SB541 2SD388/2SB541 npn/ pnp E.nm * y =• > h 7 v * * * NPN/PNP SILICON TRIPLE DIFFUSED MESA TRANSISTOR ffl/A u d io Frequency Power Amplifier WttmZPACKAGE DIMENSIONS Unit:mm ft St/FEA T U R E • 40~ 50W H i-Fi 7 v ^2 y t v 9 ') '<V — \ 7 v v 7 9 7;


    OCR Scan     		PDF 2SD388 2SB541 2SD388/2SB541 2SB541 2SB541/2SD388 350/js, C14A 2SD388 A 2sd388/2sb541 251C audio amplifier 50w 50v

    transistor 388

    Abstract: LM388 hi bass ic LM388N-1 LM 388 1.5 W audio power amplifier am/LM+1612
    Text: LM388 9 National Semiconductor LM388 1.5W Audio Power Amplifier Variable voltage gain General Description Low distortion The LM 388 is an audio am plifier designed fo r use in medium pow er consum er applications. The gain is internally set to 20 to Keep external part count low, but the addition o f an


    OCR Scan     		PDF LM388 LM388 transistor 388 hi bass ic LM388N-1 LM 388 1.5 W audio power amplifier am/LM+1612

    Untitled

    Abstract: No abstract text available
    Text: Figure 9. IRMS6100/IRM T6100 Detail Drawings W ith Optional Side V iew or Top V iew Mounting TOP VIEW Front pick and place L Pin 1 •030_ J 0.75 L .014 (.36) .388 (9.86) ""Max. 61 0 0 R Y Y W W Infineon Technologies, Corp., O ptoelectronic Division (form erly Siem ens M icroelectronics, Inc.)


    OCR Scan     		PDF IRMS6100/IRM T6100 T6118 1000/reel) IRMS6118

    3SK296

    Abstract: No abstract text available
    Text: 3SK296 Silicon N-Channei Dual Gate MOS FET HITACHI ADE-208-388 1st. Edition Application U H F R F am plifier Features • L o w noise figure. N F = 2.0 d B Typ. at f = 900 M H z • Capable o f lo w voltage operation Outline C M P A K -4 1. 2. 3. 4. Source


    OCR Scan     		PDF 3SK296 ADE-208-388 3SK296

    PBL3726

    Abstract: talking energy meter circuit diagram
    Text: ERICSSON ^ January 1998 P B L 38813 V o i c e - s w i t c h e d S p e a k e r p h o n e Ci rcui t with built in l o u d s p e a k e r a mp l i f i e r Description. Key Features The PBL 388 13 contains all the necessary circuitry, amplifiers, detectors, comparator and control functions to implement a high performance, voice-switched,


    OCR Scan     		PDF or50dB 1522-PBL 13/1N S-164 PBL3726 talking energy meter circuit diagram

    2n4401 331

    Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
    Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2SA821S. 2SA830S. 2SA854S. 2SB822 2n4401 331 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B