3PT068080JL Search Results
3PT068080JL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: 3PT068080JL 3PT068080JL Ø 3PT068080JL NPN Ø Ø Ø Al Au Ø 680µmx450µm Ø 220±20µm Ø E: B: E 130µm×105µm Ø (B) 40µm×40µm ( ) TJ 125 °C TSTG -40~125 °C (Tamb=25 ) BVCEO IC=100µA IB=0µA 80 V BVECO IC=10µA IB=0µA 7 V VCE=20V H=0mW/cm 2 |
Original |
3PT068080JL | |
topographyContextual Info: 3PT068080JL 3PT068080JL PHOTO TRANSISTOR CHIPS DESCRIPTION Ø 3PT068080JL is NPN phototransistor chips that fabricated in silicon epitaxial planar technology; Ø The chips are widely used in photo-coupler for Ø It has low dark current, high sensitivity, high |
Original |
3PT068080JL 3PT068080JL topography |