3S3D114 Search Results

80C86

Abstract: Intel 80c86 680C86 82C88 EDH681C86 EDH683C86 EDH686C86 EDH687C86 multibus ARCHITECTURE
Contextual Info: 3230114 ELECTRONIC DESIGNS INC 7 IC 00045 0, S ii • & r \ ì ELECTRONIC DESIGNS INC 7 1 D ë | 3S3D114 D0DDQ4S 0 _ T-w-n-\b • ELECTRONIC DESIGNS INC. P a r t N u m b er In c lu d e d EDH681C86 16K bytes SR A M EDH683C86 16K bytes SRAM 8K xl6

Contextual Info: EDI7F81024C ELECTRONIC DESIGNS IN C .- High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The ED17F81024C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­

Contextual Info: _ EDI7F32512C m m ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 512Kx32 CMOS Flash EEPROM Module Features The EDI7F32512C is a 5V-0nly In-System Programmable 512Kx32 bit CMOS Flash and Erasable Read Only Memory Module. Organized as Electrically Erasable Programmable

j3230

Abstract: ELECTRONIC DESIGNS INC
Contextual Info: ELECTRONIC DESIGNS INC 71 DE§3S3D114 □□□□□34 b | ~ T' 13 " 27 EDH 51664-35/45 MILITARY 64K x 16 EEPROM ELECTRONIC DESIGNS INC. PINOUTS VSS T h e 5 1 6 6 4 is a f u l l y b u f f e r e d 1M b i t E E P R O M m o d u l e c o n s i s t i n g of s i x t e e n 8 K X 8 E E P R O M ' s , t w o

20E1

Abstract: A310 G000137
Contextual Info: 3230114 E LE C TR O N IC D E S IG N S 85D IN C ELE CT RON IC DESIGNS INC AS r 00129 DEj B S 3 D i m T -4 6 -2 3 -1 2 0Q0D15T t, | ~ EDH 8808AC 70/10/12/15 LP Monolithic The fu tu re . .today. 8KxS Static RAM CMOS, Low Power Monolithic Features The EDH 8808AC-LP is a high performance, low

Contextual Info: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell

CX329

Abstract: TME 57
Contextual Info: EDI8F32258C 256Kx32 SRAM Module 256Kx32 Static RAM CMOS, High Speed Module fe a tu re s 256Kx32 bit C M O S Static The EDI8F32258C is a high speed 8 megabit Static R A M Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times

D010

Abstract: D016 D020 D023 EDI8F32256C
Contextual Info: E L E C TR ON IC D E S I GN S INC Electronic D *« lgn a Inc. S1E D • 3530114 0 0 0 H 3 2 151 *EL]> _ EDI8F32256C High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module L O lliñ lf i Features X - V 6 - 2 J - / Y