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    2n60

    Abstract: 2n60 MOSFEt 2n60 equivalent 3VD235600YL
    Contextual Info: 3VD235600YL 3VD235600YL 高压MOSFET芯片 描述 Ø 3VD235600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		3VD235600YL 3VD235600YL 3VD235600YLN 600VMOS O-251 2060m 2720m 600VVGS 2n60 2n60 MOSFEt 2n60 equivalent PDF

    2n60 equivalent

    Abstract: 3VD235600YL 2n60 TO-251 Package PD44
    Contextual Info: 3VD235600YL 3VD235600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD235600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		3VD235600YL 3VD235600YL O-251 2n60 equivalent 2n60 TO-251 Package PD44 PDF

    2n60 equivalent

    Contextual Info: 3VD235600YL 3VD235600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD235600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		3VD235600YL 3VD235600YL O-251 2n60 equivalent PDF