3VD298400YL Search Results
3VD298400YL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: 3VD298400YL 3VD298400YL 高压MOSFET芯片 描述 Ø 3VD298400YL为采用硅外延工艺制造的N沟道增强型 400V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快； |
Original |
3VD298400YL 3VD298400YL 3VD298400YLN 400VMOS O-220 3200m 2880m | |
|
Contextual Info: 3VD298400YL 3VD298400YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD298400YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltageblocking capability. |
Original |
3VD298400YL 3VD298400YL O-220 3200m /2880m |