3VD298500YL Search Results
3VD298500YL Datasheets Context Search
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Contextual Info: 3VD298500YL 3VD298500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD298500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltageblocking capability. |
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3VD298500YL 3VD298500YL O-220 3200m 2880m | |
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Contextual Info: 3VD298500YL 3VD298500YL 高压MOSFET芯片 描述 Ø 3VD298500YL为采用硅外延工艺制造的N沟道增强型 500V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快； |
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3VD298500YL 3VD298500YL 3VD298500YLN 500VMOS O-220 3200m 2880m |