3A 200V DIODE Search Results

Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FRL9230D FRL9230H FRL9230R
Contextual Info: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FRL9230D FRL9230H FRL9230R
Contextual Info: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RL9 0D, L92 R, L92 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 3A, -200V, RDS on) = 1.30Ω TO-205AF

1E14

Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842
Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

integrated circuits equivalents list

Abstract: Rad Hard in Fairchild for MOSFET
Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

40842

Contextual Info: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

IRF9622

Abstract: IRF9620 IRF9623 IRF9621 TB334
Contextual Info: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: h a r r IRF9620, IRF9621, IRF9622, IRF9623 i s s e m i c o n d u c t o r -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V • High Input Impedance These are P-Channel enhancement mode silicon gate

diode D32-02

Abstract: DIODE D32 -02 ERD32 diode D32 200V 3A
Contextual Info: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications

diode D32-02

Contextual Info: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications

diode D32-02

Abstract: C3150 D32-02
Contextual Info: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications

diode D32-02

Abstract: D3202 ERD32
Contextual Info: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications

Contextual Info: ｓ DIODE Type : 30PDA20 OUTLINE DRAWING 3A 200V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current

GF30DL

Abstract: GF30GL GF30JL GF30KL GF30ML
Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

30PDA20

Abstract: 10 DC-4 diode
Contextual Info: ｓ DIODE Type : 30PDA2 DA20 OUTLINE DRAWING 3A 200V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

Contextual Info: ì li h a r r is U U S E M I C O N D U C T O R FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3 A, -200V, RDS on = 1.30i! TO-2Q5AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

GF30D

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

S3L20U

Abstract: TL128
Contextual Info: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS S3L20U Case : AX14 Unit : mm 200V 3A FEATURES Low noise trr35ns Applicable to Automatic Insertion APPLICATION Switching power supply Free Wheel Home Appliances, Office Equipment Telecommunication, Factory Automation

Contextual Info: S3 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Package Features AL-4 • Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability • Low Leakage Current ANODE • High Surge Current Capability

NTE588

Contextual Info: NTE588 Silicon Diode 200V, 3A, Ultra Fast Switch Features: D High Reliability D Low Leakage D Low Forward Voltage D High Current Capbility D D D D Super Fast Switching Speed < 35nS High Surge Capability High Surge Capability Good for 200kHz Power Supplier

S3L20U

Abstract: TL128
Contextual Info: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS S3L20U Case : AX14 Unit : mm 200V 3A FEATURES Low noise trr35ns Applicable to Automatic Insertion APPLICATION Switching power supply Free Wheel Home Appliances, Office Equipment Telecommunication, Factory Automation