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    3BL SOT Search Results

    3BL SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    3BL SOT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> b b s a ^ l □□2883'! 3bl I IAPX BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features


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    BLU45/12 OT-119 BLU45/12 PDF

    A 673 C2 transistor

    Abstract: RF POWER TRANSISTOR NPN vhf BLW30
    Contextual Info: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.


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    711002b BLW30 OT120 -SOT12Q MBA451 RA377 A 673 C2 transistor RF POWER TRANSISTOR NPN vhf BLW30 PDF

    Contextual Info: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23


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    Q62702-C2445 OT-23 023SbD5 G120a 015D677 PDF

    IEC 62053-22

    Abstract: minimaler EM 1000 kwh meter 62053-23 reactive energy EM 23 din kwh meter 1Bl marking primer p19
    Contextual Info: 146 68 EMDX³ S96 N292510/00 Centrale de mesure multifonction Multifunction meter Multifunktion-Messzentrale Centrale di misura multifunzione Multifunctionele meetingcentrale Central de medición multifunción Central de medição multifunções Sommaire F


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    N292510/00 U31Grau 37828A IEC 62053-22 minimaler EM 1000 kwh meter 62053-23 reactive energy EM 23 din kwh meter 1Bl marking primer p19 PDF

    TV SEMP

    Abstract: ES146 minimaler All LCD TV testar n292514 eapa EM 1000 kwh meter EM 23 din kwh meter
    Contextual Info: 146 69 EMDX³ S96A N292511/00 Centrale de mesure multifonction Multifunction meter Multifunktion-Messzentrale Centrale di misura multifunzione Multifunctionele meetingcentrale Central de medición multifunción Central de medição multifunções Sommaire


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    N292511/00 37821A TV SEMP ES146 minimaler All LCD TV testar n292514 eapa EM 1000 kwh meter EM 23 din kwh meter PDF

    Transistors bd 133

    Abstract: C 1972 transistor transistor IC BT 136 BD229 BD231 transistor IC BT 134 BD227 BD226 BD230 TRANSISTOR BD 137
    Contextual Info: BD227 BD229 BD231 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, 8D228 and BD230. QUICK REFERENCE DATA


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    BD227 BD229 BD231 OT-32 BD226, 8D228 BD230. BD229 Transistors bd 133 C 1972 transistor transistor IC BT 136 BD231 transistor IC BT 134 BD226 BD230 TRANSISTOR BD 137 PDF

    Contextual Info: GaAfAs RED LIGHT EMITTER TLRC280 TLRC280 Unit in mm LED FOR PLASTIC FIBER • • • Luminous spectra are suited to plastic fiber : /Ip = 660nm (TYP) High coupling efficiency with fiber: Pf= —8.5dBm(TYP) High speed application is possible. : fc = 7MHz(TYP)


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    TLRC280 TLRC280) 660nm 25gCC) PDF

    DIRIS A40

    Abstract: transformador transformador 120 v a 24 v DIRIS C fonction iec 62053-21 3 FASE WIRE a40 diris 3NBL socomec iec 62053-21 kwh
    Contextual Info: 876_304_a 23/12/04 12:24 Page 1 DIRIS A40/A41 Notice d’utilisation Operating instructions - Bedienungsanleitung Istruzioni per l’uso - Gebruiksaanwijzing Instrucciones de servicio - Manual de instruções F GB SOCOMEC GROUP SWITCHING PROTECTION & UPS D


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    A40/A41 DIRIS A40 transformador transformador 120 v a 24 v DIRIS C fonction iec 62053-21 3 FASE WIRE a40 diris 3NBL socomec iec 62053-21 kwh PDF

    74LVC02

    Abstract: 74LVC02D 74LVC02DB 74LVC02PW
    Contextual Info: Philips Semiconductors Product Specification Quad 2-input NOR gate FEATURES 74LVC02 QUICK REFERENCE DATA G N D = 0 V; T arnb = 25°C; t, = t, < 2.5 ns • Wide supply voltage range of 1.2 V to 3.6 V • In accordance with JEDEC standard no. 8-1 A. • Inputs accept voltages upto


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    74LVC02 74LVC02 7110fleb D100474 74LVC02D 74LVC02DB 74LVC02PW PDF

    Contextual Info: ïrM ïïrra r^ fN l ]uvyu u l^ jlttj 0-250 AMP v o lja g e p o s it iv e REGULATORS EZ55Z3L TEL: 805-498-2111 FEATURES • • • • • • • External capacitor not required for stability Low dropout performance Fixed models @ 3.3V, 5V, 9V, 12V, 24V


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    EZ55Z3L OT-223 EZ55Z3L 250mA OT-223 PDF

    Contextual Info: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZRC250 ISSUE 1- OCTOBER 1995 DEVICE DESCRIPTION FEATURES The ZRC250 uses a bandgap circuit design to achieve a precision m icro p o w e r voltage reference of 2.5 volts. The device is available in small outline surface m ount packages, ideal for


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    ZRC250 ZRC250 PDF

    supersot-3

    Abstract: 2T3 transistor NDS335N FR 014 S0113D
    Contextual Info: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


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    NDS335N OT-23 OT-23) NDS33SN supersot-3 2T3 transistor NDS335N FR 014 S0113D PDF

    f 4905

    Abstract: TLE 207 g
    Contextual Info: SIEM ENS Uni- and Bipolar Hall 1C Switches for Magnetic Field Applications TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945 G Bipolar 1C Preliminary Data Features • • • • • • Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields


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    TLE4905G; TLE4935G TLE4935-2G; TLE4945G OT-89 OT-89 AED01425 23SbOS f 4905 TLE 207 g PDF

    BFQ43

    Abstract: transistor tt 2222 on 4312 BLW31 Metallized Polyester Film Capacitor MER BB313
    Contextual Info: L ib s a 'm D02T30G flûT N AKER PHILIPS/DISCRETE V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in c!ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power


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    D02T30G BLW31 BFQ43 transistor tt 2222 on 4312 BLW31 Metallized Polyester Film Capacitor MER BB313 PDF

    DA tda8702

    Abstract: ISD04 TDA8702 TDA8702T zt75 8-bit latched input D-A converter TDA8702T J36524 TEKP6201
    Contextual Info: Product specification Philips Semiconductors Linear Products TDA8702 8-bit video digital-to-analog converter APPLICATIONS FEATURES • 8-bit resolution • Conversion rale up to 30 MHz • TTL input levels • Internal reference voltage generator • Two complementary analog voltage outputs


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    TDA8702 TDA8702 TDA8702/ TDA8702T 7110fl2t, DA tda8702 ISD04 TDA8702T zt75 8-bit latched input D-A converter TDA8702T J36524 TEKP6201 PDF

    y1 npn

    Abstract: 538 NPN transistor
    Contextual Info: bbS3R31 0Q2Mb37 Qb6 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability. PIN DESCRIPTION


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    bbS3R31 0Q2Mb37 BF547 BF547 y1 npn 538 NPN transistor PDF

    74ABT651

    Abstract: 74ABT651D 74ABT651N 74ABT651PW 74ABT652 74ABT652 Philips
    Contextual Info: INTEGRATED CIRCUITS 74ABT651 Octal transceiver/register, inverting 3-State Product specification 1995 Feb 23 IC23 Data Handbook Philips Semiconductors PHILIPS PHILIPS 711002b 000700b 121 m \ This Material Copyrighted By Its Respective Manufacturer Product specification


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    74ABT651 711002b 000700b 74ABT651 74ABT652 64mA/-32mA 500mA TSSOP24: 74ABT651D 74ABT651N 74ABT651PW 74ABT652 74ABT652 Philips PDF

    aou 746

    Abstract: BE 187 TRANSISTOR 538 NPN transistor BF547 DB64 TRANSISTOR 185 846
    Contextual Info: P hilips Sem iconductors • N bfc.53^31 AMER 00241,37 Qb6 P H ILIP S /D IS C R E T E H A P X Product »Decification b?E NPN 1 GHz wideband transistor FEATURES g BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability.


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    BF547 BF547 aou 746 BE 187 TRANSISTOR 538 NPN transistor DB64 TRANSISTOR 185 846 PDF

    Legrand 0 046 65

    Abstract: Legrand 0 046 86 IEC61557-12 DIN43880 IEC62053-31 IEC 62053-22 D41C afficheur lcd legrand 3NBL
    Contextual Info: Risque d’électrocution, de brûlures ou d’explosion • l’installation et l’entretien de cet appareil ne doivent être effectués que par du personnel qualifié • avant toute intervention sur l’appareil, coupez les entrées tensions, court-circuitez le secondaire de


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    3d printer

    Abstract: 74HCT1284 74HCT1284DB 74HCT1284N 74HCT1284PW 7HCT1284D 3BL sot
    Contextual Info: INTEGRATED CIRCUITS M In] I E 7 4 H C T 1 2 8 4 Parallel printer interface transceiver/buffer Product specification 1995 Jun 27 IC06 Data Handbook Philips Semiconductors 7110fl2b D O L Ó S I PHILIPS SAT This Material Copyrighted By Its Respective Manufacturer


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    74HCT1284 711002b SQT360-1 MO-153AC 711062b 3d printer 74HCT1284 74HCT1284DB 74HCT1284N 74HCT1284PW 7HCT1284D 3BL sot PDF

    ST U705

    Abstract: U705 ST JC EF 41E u705
    Contextual Info: T Y P ic a í- ¿ ¿ ~ r r < c Æ '* /G oa/ t A /s ¿s ís x ^ g c MATERIAL: s v < s ./ : ^1- 41E &UPWDY 3 3 U .4 - 3 5 0 CU - A U 300 i î t . 4 ACS? lâ - l 26-7 Y T A 3 2 i R - 2 kì D ie u s e ai7 /M /lJ^./|>è-i/705 ^ J J - - INSTALLATION ALUMINUM


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    -i/705 Y7A45 2S2-/27) AFFECTED-ECP20315 ST U705 U705 ST JC EF 41E u705 PDF

    Contextual Info: 19-1136;Rev 7.1/97 Quad, Low- Voltage, SPST Analog Switches Genera/ Description Features ♦ +2V to +12V Single Supply ±2V to ±6V Dual Supplies The MAX4521 has four normally closed NIC switches, and the MAX4522 has four normally open (NO) switch­ es. The MAX4523 has two NC switches and two NO


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    MAX4521 MAX4522 MAX4523 DG211/DG212/DG213 PDF

    Contextual Info: B U R R - BROW N ADS802 19-Bit j 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES The ADS802 is alow power, monolithic 12-bit, 10MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes


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    ADS802 19-Bit 10MHz ADS802 12-bit, 10MHz 12-bit ZZ217 PDF

    sd 339 b5

    Abstract: ps2 9 pin code de hamming
    Contextual Info: Preliminary specification Philips Semiconductors Interface for data acquisition and control SAA5250 for multi-standard teletext s y s t e m s _ G ENERAL DESCRIPTIO N The SA A5250 is a CMOS Interface fo r Data A c q u isitio n and Control (CIDAC) designed fo r use in


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    SAA5250 A5250 sd 339 b5 ps2 9 pin code de hamming PDF