3C000H Search Results

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Abstract: TC58F401
Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

am29f400bb

Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

amic a290021t-70

Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Contextual Info: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance

am29f400bb

Contextual Info: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements

am29f400b

Abstract: am29f400bb 22AB AM29F400BT
Contextual Info: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations

Contextual Info: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements

Contextual Info: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in

Contextual Info: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser

Contextual Info: in tj 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY 28F200BX-T/B, 28F002BX-T/B • x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ x8-only Input/Output Architecture

Contextual Info: 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read — 60/80 ns Maximum Access Time

Contextual Info: in te l A28F400BX-T/B 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY Automotive x8/x16 Input/Output Architecture — A28F400BX-T, A28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Optimized High Density Blocked Architecture

intel e28f

Abstract: 28f400 BYTE PROGRAM
Contextual Info: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at

Contextual Info: in te i. 28F200BL-T/B, 28F002BL-T/B 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6V ■ Expanded Temperature Range 20°C to +70°C ■ x8/x16 Input/Output Architecture

Contextual Info: PRELIMINARY in te l 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption — 20 mA Typical Read Current x8-Only Input/Output Architecture — Space-Constrained 8-bit

28f800b5

Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Contextual Info: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

M29W400B

Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

MT28F002B3

Abstract: MT28F200B3
Contextual Info: 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical

SST49LF020A

Contextual Info: 2 Mbit LPC Flash SST49LF020A SST49LF020A2Mb LPC Flash Data Sheet FEATURES: • LPC Interface Flash – SST49LF020A: 256K x8 2 Mbit • Conforms to Intel LPC Interface Specification 1.0 • Flexible Erase Capability – Uniform 4 KByte Sectors – Uniform 16 KByte overlay blocks

A25L05PT

Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
Contextual Info: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date

Contextual Info: PRELIMINARY A M Dii Am29LV400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and w rite operations for battery-powered applications