3C131 Search Results

Contextual Info: bb.53^31 0023673 T73 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue A p ril 1 9 9 1 N AUER PHILIPS/DISCRETE BSP220 b7E D P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • LOW Rpg on

BSX63

Abstract: BSX62 BSX63-16 BSX62-16 BSX62-10 BSX63-10 IEC134 Philips discrete semiconductor
Contextual Info: =tiS3T31 0D57THM 712 APX Philips Semiconductors Data sheet status Preliminary specification date of issue June 1992 BSX62-10, -16/BSX63-10, -16 Silicon planar epitaxial transistors N AI1ER PHILIPS/DISCRETE bTE D Q U IC K REFERENCE DATA SYMBOL >C Ptot PARAM ETER

2N2369 transistor pulse generator

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • ^ 5 3 ^ 3 1 OOSflOTM TT7 APX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistor in a TO-18 metal envelope with the collector connected to the case. The 2N2369 is primarily intended for use in very high-speed saturated switching and v.h.f. amplification.

CI 556

Abstract: cb242 transistor 123 DL itt 2222 CB243 ITT 2222 A TRANSISTOR BO 341 BLF546 UBB930 MCB-24
Contextual Info: Philips Semiconductors f c ib S B 'Ì B I 0030155 flO f l H i APX Product specification UHF push-pull power MOS transistor _ BLF546 N AMER P H I L I P S / D I S C R E T E FEATURES bTE » PIN CONFIGURATION • • • • High power gain Easy power control

MARKING 1F

Abstract: BST15 BST16 marking 81 SOT89
Contextual Info: • bbSBIBl OÜSSbBl ¿37 ■ APX N AMER PHI LIPS /DISCRETE BST15 BST16 t>7E » SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in m in ia tu re plastic envelopes intended fo r use in a m p lifie r and switching applications. C o m p le m e n ta ry types are B S T 3 9 /4 0 .