3CA8772 Search Results

3CA8772 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
3CA8772		Unknown	TO-126 Plastic-Encapsulate Transistors		Original	PDF

3CA8772 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR PNP TO – 126 FEATURES z High Current z Low Voltage 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	O-126 3CA8772 -10mA 10MHz	PDF
transistor TO-126 Outline Dimensions Abstract: to-126 transistor 3CA8772 Plastic-Encapsulate Transistors TO-126 Contextual Info: TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃	Original	O-126 3CA8772 O--126 -100A 290TYP 090TYP transistor TO-126 Outline Dimensions to-126 transistor 3CA8772 Plastic-Encapsulate Transistors TO-126	PDF
3CA8772 Abstract: TO126 package t 0433 transistor Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range	Original	O-126 3CA8772 O--126 -100A 290TYP 090TYP 3CA8772 TO126 package t 0433 transistor	PDF
3CA8772 Contextual Info: 3CA8772 3CA8772 TO-126 TRANSISTOR PNP FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃	Original	3CA8772 O-126 -10kdown 10MHz 3CA8772	PDF
3CA8772 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR PNP TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:	Original	O-126 3CA8772 O-126 10MHz 3CA8772	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF