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    KEMET Corporation ALF20C103EC063

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    KEMET Corporation ALC10C103EC063

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    Skyworks Solutions Inc 533EC000106DG

    XTAL OSC XO 2.5V 6SMD
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    Skyworks Solutions Inc 533EC000191DG

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    Skyworks Solutions Inc 533EC000788DG

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    3EC0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400

    AT26DF321

    Abstract: 16-SOIC
    Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 66 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks


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    PDF 32-Kbyte 64-Kbyte 3633C AT26DF321 16-SOIC

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL

    AT25DF321

    Abstract: AT26DF321 16-SOIC AT25DF321A
    Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 66 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks


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    PDF 32-Kbyte 64-Kbyte 3633F AT25DF321 AT26DF321 16-SOIC AT25DF321A

    AT26DF321

    Abstract: AT25DF321 DATASHEET AT25DF321 26df 16-SOIC
    Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 66 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks


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    PDF 32-Kbyte 64-Kbyte 3633E AT26DF321 AT25DF321 DATASHEET AT25DF321 26df 16-SOIC

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    SGA23

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23

    ST3215

    Abstract: No abstract text available
    Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    PDF RL78/G13 16-Bit R01UH0146EJ0310 ST3215

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    PDF S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N,

    BCM 4709

    Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
    Text: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアル ハードウェア編 16 ビット・シングルチップ・マイクロコントローラ 本資料に記載の全ての情報は本資料発行時点のものでありルネサス エレクトロニクスは、


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    PDF 78K0R/Fx3 78K0R/FB3: PD78F1804 78F1805 78F1806 78F1807 78F1804 BCM 4709 78F1830 78F1834 78f1835 78f1845 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    PDF S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    PDF S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0

    002H-207H

    Abstract: 3E40-3FFF NexFlash Technologies Sram serial 001H 208H NX26F640C NXSF020D-0902 26f640
    Text: PRELIMINARY SEPTEMBER 2002 NX26F640C 64M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS2 INTERFACE This document contains PRELIMINARY INFORMATION. NexFlash reserves the right to make changes to its product at any time without notice in order to improve design and supply the best


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    PDF NX26F640C 64M-BIT NXSF020D-0902 64M-bit NX26F640C-3T 32-pin, NX26F640C-3T-R 002H-207H 3E40-3FFF NexFlash Technologies Sram serial 001H 208H NX26F640C NXSF020D-0902 26f640

    S25FL032P

    Abstract: FL032P S25FL S25FL032A SA56 SA60
    Text: S25FL032P 32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet (Preliminary) S25FL032P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    PDF S25FL032P 32-Mbit 104-MHz S25FL032P FL032P S25FL S25FL032A SA56 SA60

    CTC 1351

    Abstract: transistor ctc 1351 CTC 1351 data sheet CTC 1351 transistor ctc 1403 04D8 CTC 1351 transistor pin detail SP 1191 WR10 Z80180
    Text: APPLICATION NOTE 1 TECHNICAL CONSIDERATIONS WHEN IMPLEMENTING LOCALTALK LINK ACCESS PROTOCOL T 13 he LLAP Protocol is an important part of the Appletalk network system. It manages access to the node-to-node transmission of network data packets, governs access to the


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    PDF 1000h 0b000h CTC 1351 transistor ctc 1351 CTC 1351 data sheet CTC 1351 transistor ctc 1403 04D8 CTC 1351 transistor pin detail SP 1191 WR10 Z80180

    pdl128g70

    Abstract: SA90 1D400
    Text: ADVANCE INFORMATION Am29PDL128G 128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 128Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4


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    PDF Am29PDL128G 16-Bit/4 32-Bit) 128Mbit 16-bit) Am29F Am29LV LAB080 pdl128g70 SA90 1D400

    2B60000

    Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


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    PDF S70GL01GN00 2B60000 S29GL512N gl512 2200-0002

    R5F100LEA

    Abstract: R5F100 R5F100AA R5F100LE R5F100ACDSP R5F100AE R01US0015E R20UT0008E R5F101 R5F10
    Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    PDF RL78/G13 16-Bit R01UH0146EJ0200 R5F100LEA R5F100 R5F100AA R5F100LE R5F100ACDSP R5F100AE R01US0015E R20UT0008E R5F101 R5F10

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256

    MBM29XL12DF

    Abstract: No abstract text available
    Text: MBM29XL12DF-70/80 Data Sheet Retired Product MBM29XL12DF -70/80 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    PDF MBM29XL12DF-70/80 MBM29XL12DF DS05-20901-2E F0307 ProductDS05-20901-2E MBM29XL12DF

    S29GL512N datasheet

    Abstract: GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL128P S29GL256N S29GL512N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and


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    PDF S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL512P, S29GL256P, S29GL128P S29GL512N datasheet GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL256N S29GL512N

    1A4000

    Abstract: No abstract text available
    Text: Am29PDL128G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29PDL128G Am29PDL127H 1A4000