3G AMPLIFIER Search Results

ADF4602

Abstract: MOD RF TX-SAW MID 5V WCDMA receiver UMTS baseband OP BASEBAND 80MHZ AD9863 WCDMA TRANSCEIVER gsm filter 922a1 sr 2262
Contextual Info: Single-Chip, Multiband 3G Femtocell Transceiver ADF4602 APPLICATIONS 3G home basestations femtocells 3G repeaters DAC2 GPO[4:1] DAC2 GPO 1 TO 4 FUNCTIONAL BLOCK DIAGRAM DAC1 Single-chip multiband 3G transceiver 3GPP 25.104 release 6 WCDMA/HSPA compatible

MXC300-30

Abstract: DigRF MXC300 ARM11 ARM1136 SC140 H.264 encoder chip bluetooth encoder h.264 GSM starcore ARM11TM
Contextual Info: Mobile Extreme Convergence Platforms MXC300-30 Overview First 3G Single Core Modem count, size and system costs, while Freescale Semiconductor’s leadership in 3G Freescale’s latest 3G platform, the enhancing multimedia and continues with the MXC300-30 platform. Based

A844D

Contextual Info: Single-Chip, Multiband 3G Femtocell Transceiver ADF4602 FEATURES APPLICATIONS 3G home base stations femtocells GPO[4:1] ADF4602 GPO 1 TO 4 DAC2 DAC2 DAC1 FUNCTIONAL BLOCK DIAGRAM DAC1 Single-chip, multiband 3G transceiver 3GPP 25.104 release 9 WCDMA/HSPA compatible

BNC edge connector layout

Abstract: hdmi SDI BNC7T-J-P-HN-ST-EM1 SMB SDI layout FOR 3G cables samtec connector samtec connector QTH hdmi to SDI Samtec High Density Arrays
Contextual Info: Common 3G SDI applications include Routers, Switchers, Video Servers, Distribution Amplifiers DAs , Multi-Viewers, Encoders/Decoders, Converters, Projectors, and Test & Measurement. Typical Interconnect Panels 3G SDI Challenges 2 Samtec’s signal integrity expertise and

3g transistor

Abstract: UAA3536 3g amplifier transistor for 3G UAA3537 3G RF signal processing BGY402E HVQFN16 HVQFN24 UAA3580
Contextual Info: 3G RF chipset Compact, radio chipset for stand-alone UMTS applications and 3G phones For maximum design flexibility, Philips Semiconductors has developed a complete radio chipset for the UMTS RF part of a GSM/3G phone that perfectly complements our GSM/GPRS/

ev-adf4602eb3ztst

Abstract: AD9963 EVAL-ADF4602EB3Z OP BASEBAND 80MHZ UMTS receiver ADF4602 Theor 7092d WCDMA receiver UMTS baseband EVAL-ADF4602EB5Z
Contextual Info: Single-Chip, Multiband 3G Femtocell Transceiver ADF4602 APPLICATIONS 3G home base stations femtocells ADF4602 GPO 1 TO 4 DAC2 DAC2 GPO[4:1] FUNCTIONAL BLOCK DIAGRAM DAC1 Single-chip, multiband 3G transceiver 3GPP 25.104 release 9 WCDMA/HSPA compatible UMTS band coverage

4G lte RF Transceiver

Abstract: MB86L10A DigRF 4G RF transceiver LTE power amplifier transceiver 4G LTE lte RF Transceiver tx 2G transmitter MB86L01A lte transceiver transceiver 4G LTE
Contextual Info: The Fujitsu 2G/3G/LTE Transceiver MB86L10A Ideal for Multimode, Multiband LTE, UMTS and EDGE Mobile Handsets Transceiver Module TCXO 3G Rx Path Tx Path 4G Rx Path Band XI ADC 3G + 4G DigRF Interfaces SYSCLKEN Band IX SWITC H SYSCLK Band I Band VI ADC Band VIII

Contextual Info: MHL21336N Rev. 5, 1/2005 Freescale Semiconductor Technical Data 3G Band RF Linear LDMOS Amplifier MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

MHL21336NN

Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN 3G Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

MHL21336N

Abstract: 1800 ldmos
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 7, 8/2006 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

rf6285

Abstract: 915 DCDC RF6280 3g PA amplifier
Contextual Info: RFMD 3G Transmit System Family of UMTS Transmit Products for Multiband, Multimode 3G Handsets and Mobile Devices Performance into mismatch The RF6281 and RF6285 are broadband, high-power, high-efficiency linear power amplifier PA modules developed to support multiple bands

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 6, 7/2005 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

DG09

Abstract: AN-6088 ICC550 an6088 pae12 25PAE
Contextual Info: www.fairchildsemi.com AN-6088 FAN5902 Power Management Solution for Improving the Power Efficiency of 3G WCDMA RF Power Amplifiers Abstract This application note provides the basics for implementing a Dynamic Voltage Scaling DVS power management technique with 3G WCDMA RF power amplifiers (PAs) to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 6, 7/2005 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

Contextual Info: MOTOROLA Order this document by MHL21336/D SEMICONDUCTOR TECHNICAL DATA The RF Line 3G Band RF Linear LDMOS Amplifier MHL21336 Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

RF7205

Abstract: RF7200 RF7201 HSPA Module RF7202 RF7203 RF7211 RF720x
Contextual Info: RFMD . 3G Product Portfolio: RF720x Family of WCDMA/HSPA+Power Amplifier PA Modules The RF720x family of high-efficiency, linear PA modules is specifically designed for the needs of today’s complex mult-band, multimode 3G mobile devices. Whether single- or dual-band,

K 3569

Abstract: king 525 MHL21336
Contextual Info: MOTOROLA Order this document by MHL21336/D SEMICONDUCTOR TECHNICAL DATA MHL21336 The RF Line 3G Band Linear Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

Contextual Info: Coaxial ZJL-3G+ ZJL-3G Amplifier 50Ω Low Power 20 to 3000 MHz Features • wideband, 20 to 3000 MHz • compact rugged case, 1.07”x0.61” including mounting bracket • low noise figure, 3.8 dB typ. • protected by US Patent, 6,943,629 Connectors SMA

201646B

Contextual Info: PRELIMINARY DATA SHEET SKY65186-11: 330 – 2700 MHz Dual-Channel, Variable Gain Amplifier Front-End Module Applications Description • Cellular, 3G and LTE infrastructure Skyworks SKY65186-11 is a high dynamic range receive Variable Gain Amplifier VGA Front-End Module (FEM) for 3G and LTE

Contextual Info: PRELIMINARY DATA SHEET SKY65185: 1.7 – 2.7 GHz Dual-Channel, Variable Gain Amplifier Front-End Module Applications Description • Cellular, 3G and LTE infrastructure Skyworks SKY65185 is a high dynamic range receive Variable Gain Amplifier VGA Front-End Module (FEM) for 3G and LTE

schematic diagram vga to rf

Abstract: SKY65185
Contextual Info: PRELIMINARY DATA SHEET SKY65185: 1.7 – 2.7 GHz Dual-Channel, Variable Gain Amplifier Front-End Module Applications Description • Cellular, 3G and LTE infrastructure Skyworks SKY65185 is a high dynamic range receive Variable Gain Amplifier VGA Front-End Module (FEM) for 3G and LTE

RF6560

Abstract: RF6260 rfmd RF6560 Coexistence of GSM, WCDMA and LTE Rfmd RFRD6460 LTE rf front end RFRD6460 LTE RF Multiband RF6260 datasheet POWERSMART
Contextual Info: RFMD . RFRD6460 3G Multimode, Multi-band PowerSmart Power Platform RFMD’s RFRD6460 3G multi-band, multimode PowerSmart™ Power Platform is targeted at smartphones and mobile internet devices MIDs by providing extensive flexibility and customization,

DFE201610

Abstract: DFE20
Contextual Info: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers

MHL21336NN

Contextual Info: Freescale Semiconductor Technical Data 3G Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity