Untitled
Abstract: No abstract text available
Text: Photo Diode Product No: M TD3610D3 Peak Sensitivity Wavelength: 940nm The MTD3610D3 is a photo diode in a water-clear 3mm plastic molded package. It is well suited for high reliability and high sensitivity applications. Custom package solutions and sorting are available.
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TD3610D3
940nm
MTD3610D3
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UV diode 254 nm
Abstract: UV diode 100 nm to 280 nm UV diode 280 nm
Text: 3mm Silicon PIN Photo Diode Dialight 551-7710 1.57 [.062] 4.32 [.170] 7.11 .280 Features 6.35 [.250] • Short Switching Time • High Spectral Sensitivity • Daylight Filtered for Near Infrared Range • Low Capacitance • High Reliability With No Testable
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100mA,
MIL-STD-202E,
UV diode 254 nm
UV diode 100 nm to 280 nm
UV diode 280 nm
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IS654A
Abstract: IS655A
Text: IS654A IS655A 3mm DIA. MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT Dimensions in mm 4.0 DESCRIPTION The IS654A Gallium Arsenide Emitting Diode and the IS655A ( NPN Silicon Photo Transistor ) are a mechanically and spectrally matched emitter detector end looking pair.
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IS654A
IS655A
DB92102-AAS/A2
IS654A
IS655A
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UV led 254 nm
Abstract: UV diode 280 nm photo diode uv 254 nm uv LED UV LED 280 nm UV diode 254 nm
Text: 3mm Infrared Discrete LED Silicon PIN Photo Diode NEW Dialight 521-9741 Features 4.85 [.191] .56 [.022] .64 [.025] 4.1 [.161] 3.9 [.153] 3.8 [.150] .50 [.020] 3.0 [.168] • Short Switching Time • High Spectral Sensitivity • Daylight Filtered for Near Infrared Range
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100mA,
MIL-STD-202E,
UV led 254 nm
UV diode 280 nm
photo diode uv
254 nm uv LED
UV LED 280 nm
UV diode 254 nm
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PD494-6C
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPD-049-064 REV : PAGE : 3mm Silicon PIN Photodiode MODEL NO : PD494-6C █ Features : •Fast response times •High photo sensitivity •Small junction capacitance •Suitable for visible and near infrared radiation
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DPD-049-064
PD494-6C
PD494-6C
D-049-064
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PD1124-6C
Abstract: silicon pin photodiode
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPD-112-063 REV : PAGE : 3mm Silicon PIN Photodiode MODEL NO : PD1124-6C █ Features : •Fast response times •High photo sensitivity •Small junction capacitance •Suitable for visible and near infrared radiation
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DPD-112-063
PD1124-6C
PD1124-6C
silicon pin photodiode
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automatic door sensor
Abstract: No abstract text available
Text: Technical Data Sheet 3mm Silicon PIN Photodiode PD204-6B/C1 Features ˙Fast response time ˙High photo sensitivity ˙Small junction capacitance Descriptions ˙PD204-6B/C1 is a high speed and high sensitive PIN photodiode in a standard 3Φplastic package. The device is matched to infrared emitting diode.
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PD204-6B/C1
PD204-6B/C1
NoDPD-020-095
date12-24-2002
automatic door sensor
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 3mm Silicon PIN Photodiode T-1 PD204-6C/L3 Features ˙Fast response time ˙High photo sensitivity ˙Small junction capacitance Descriptions ˙PD204-6C/L3 is a high speed and high sensitive PIN photodiode in a standard 3Φplastic package.
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PD204-6C/L3
PD204-6C/L3
NoDPD-020-073
date4-30-2003
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PD234-6C
Abstract: PIN Photodiode photodiode 940nm
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPD-023-065 REV : PAGE : 3mm Silicon PIN Photodiode MODEL NO : PD234-6C Features : Fast response time High photo sensitivity Small junction capacitance Suitable for visible and near infrared radiation
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DPD-023-065
PD234-6C
PD234-6C
PIN Photodiode
photodiode 940nm
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automatic door sensor
Abstract: PD204-6B
Text: Technical Data Sheet 3mm Silicon PIN Photodiode T-1 PD204-6B Features ․Fast response time ․High photo sensitivity ․Small junction capacitance ․Pb free Descriptions ․PD204-6B is a high speed and high sensitive PIN photodiode in a standard 3Φplastic package.
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PD204-6B
PD204-6B
NoDPD-020-040
date07-20-2004
automatic door sensor
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PD204-6C
Abstract: automatic door sensor
Text: Technical Data Sheet 3mm Silicon PIN Photodiode T-1 PD204-6C Features ․Fast response time ․High photo sensitivity ․Small junction capacitance ․Pb Free Descriptions ․PD204-6C is a high speed and high sensitive PIN photodiode in a standard 3Φplastic package.
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PD204-6C
PD204-6C
NoCDPD-020-002
date2005/3/28
automatic door sensor
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PD204-6B
Abstract: No abstract text available
Text: Technical Data Sheet 3mm Silicon PIN Photodiode T-1 PD204-6B Features ․Fast response time ․High photo sensitivity ․Small junction capacitance ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PD204-6B is a high speed and high sensitive PIN
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PD204-6B
PD204-6B
NoDPD-020-040
date07-20-2005
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 3mm Silicon PIN Photodiode T-1 PD204-6B Features Fast response time High photo sensitivity Small junction capacitance Pb free The product itself will remain within RoHS compliant version. Descriptions PD204-6B is a high speed and high sensitive PIN
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PD204-6B
PD204-6B
DPD-020-040
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3MM LED
Abstract: IR detector transistor 551 IR LED array nj TRANSISTOR green LED 3mm low 3mm "ir led" diode led ir 3mm photo diode LED 3mm 2ma
Text: Selector Guide: 3mm IR and L E D Products DESCRIPTION DATA SHEET PAGE s 3mm IR Detector Infra Red Emitter 551-7110 4-7 3mm IR Detector Photo Transistor 551-7610 4-8 3mm IR Detector Photo Diode 551-7710 4-9 551-XX01 4-10 & 4-11 551-XX02 4-12 3mm LED CBI (DIN 41494 compatible)
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551-XX01
551-XX02
551-xx03
3MM LED
IR detector
transistor 551
IR LED array
nj TRANSISTOR
green LED 3mm low
3mm "ir led"
diode led ir
3mm photo diode
LED 3mm 2ma
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a950
Abstract: lk950
Text: 3mm Silicon PIN Photo Diode Dialight 551-7710 Features • • • • • 4.32_ M 70] 7.11 .280 5.08 [. 2 0 0 ] Short Switching Time High Spectral Sensitivity Daylight Filtered for Near Infrared Range Low Capacitance High Reliability With No Testable Degradation
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PDF
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100mA,
MIL-STD-202E,
a950
lk950
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EP 950
Abstract: No abstract text available
Text: 3mm Infrared Discrete LED Silicon PIN Photo Diode Dîalîght 521-9741 Features [.022] 5] I .50 [.020] • • • • • [.150] _L_ [.059] Short Switching Time High Spectral Sensitivity Daylight Filtered for Near Infrared Range Low Capacitance High Reliability With No Testable
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PDF
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-55to+
100mA,
MIL-STD-202E,
EP 950
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MEL82
Abstract: MI38T MIB38T MIB38T-K
Text: MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.
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MI38T
MIB38T
MIB38T-K)
MI38T
MIB38T
MEL82
MIB38T-K
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MI33T
Abstract: MIB33T
Text: CRO MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor.
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MI33T
MIB33T
MEL81N
100mA
10/xs,
MI33T
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MEL82
Abstract: MI38T MIB38T MIB38T-K
Text: ORO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type Ieadframe, MI38T & MJB38T are mechanically and spectrally matched to the MEL82 series photo transistor.
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MI38T
MIB38T
MIB38T-K)
MI38T
MIB38T
MJB38T
MEL82
100mA
MIB38T-K
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MEL82
Abstract: MI38T MIB38T MIB38T-K
Text: CRO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.
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MI38T
MIB38T
MIB38T-K)
MI38T
MIB38T
MEB38T
MEL82
100mA
MIB38T-K
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MI33T
Abstract: MIB33T
Text: MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic • package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor.
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MI33T
MIB33T
MI33T
MEL81N
100mA
10/xs,
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MI33T
Abstract: MIB33T em micro
Text: CRO MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor.
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MI33T
MIB33T
MEL81N
10/xs,
MI33T
100mA
em micro
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Untitled
Abstract: No abstract text available
Text: SFH 487P SIEMENS FEATURES Characteristics T a = 2 5 °C * T1 (3mm) Package Parameter * Flat Plaslic Lens * Long Term Stability * Good Spectral Match with Silicon Photo Detector * Gallium Aluminum Arsenide Material * Very Wide Beam, 130° * Very High Power, 15 mW Typical at
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Untitled
Abstract: No abstract text available
Text: E 6 1 5 b ? g O O D M ?^ 733 Dîalïght 3mm IR Detectors Photo Diode 551-7710 Features 1.57 [.062] ± 6.35 • Short Switching Time • High Spectral Sensitivity • Daylight Filtered for Near Infra-Red Range • Low Capacitance • High Reliability With No Testable
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l5b72
MIL-STD-202E,
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