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    3P TRANSISTOR Search Results

    3P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2SB688

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SD718 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z Complementary to 2SB688 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications


    Original     		PDF 2SD718 2SB688 500mA transistor 2SB688

    036a transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO-3P 2SC5287 TRANSISTOR NPN 1. BASE FEATURES •High Voltage Switchihg Transistor 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 2SC5287 350mA 2SC5287 036a transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5198 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z Low Collector Saturation Voltage z Good Linearity of hFE 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications


    Original     		PDF 2SC5198

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors KTD998 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Current and Power Capability z High Power Amplifier Application 2. COLLECTOR 3. EMITTER


    Original     		PDF KTD998 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5287 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Speed Switching 2. COLLECTOR 3. EMITTER APPLICATIONS z For Switching Regulator and General Purpose Applications


    Original     		PDF 2SC5287

    TRANSISTOR C 2026

    Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
    Text: Power Transistor PNP 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application TO-3P Mechanical Data Case: TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026


    Original     		PDF 2SB817E 2SB817E MIL-STD-750, TRANSISTOR C 2026 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3DA5200B TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Current and Power Capacity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 3DA5200B 800mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3CA1943 TO – 3P TRANSISTOR PNP 1. BASE FEATURES z High Breakdown Voltage z General Purpose Switching and Amplification 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 3CA1943 -50mA -120V -800mA

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: MG6331 1455 audio output TRANSISTOR NPN npn transistor SEMELAB LE17 MG9411 "NPN Transistor" MG6331-R
    Text: SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R • TO-3P Plastic Package • Complimentary PNP – MG9411 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package


    Original     		PDF MG6331, MG6331-R MG9411 MG6331 300W TRANSISTOR AUDIO AMPLIFIER MG6331 1455 audio output TRANSISTOR NPN npn transistor SEMELAB LE17 MG9411 "NPN Transistor" MG6331-R

    PRSS0003ZA-A

    Abstract: 3p transistor PRSS0004ZE-A TO3PFMV
    Text: PM519 Package name PVC Polyvinyl chloride Treatment Antistatic Magazine material Maximum storage No. Transistor/Magazine Packing form TO-3P PRSS0004ZE-A TO-3P, TO-3PV 30 Non dry pack TO-3PFM PRSS0003ZA-A TO-3PFM, TO-3PFMV 30 Non dry pack Unit : mm +2 -2


    Original     		PDF PM519 PRSS0004ZE-A PRSS0003ZA-A PRSS0003ZA-A 3p transistor PRSS0004ZE-A TO3PFMV

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: "PNP Transistor" MG9411 1455 properties of transistor pnp 9099 SEMELAB LE17 MG6331
    Text: SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R • TO-3P Plastic Package • Complimentary NPN – MG6331 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package


    Original     		PDF MG9411, MG9411-R MG6331 MG9411 -230V -260V SymMG9411 300W TRANSISTOR AUDIO AMPLIFIER "PNP Transistor" MG9411 1455 properties of transistor pnp 9099 SEMELAB LE17 MG6331

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP30G120W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1200V High Speed Switching C Low Saturation Voltage 30A IC Typical VCE sat = 3.0V at IC=30A RoHS-compliant halogen-free TO-3P package G C C G E TO-3P E


    Original     		PDF AP30G120W-HF-3 100oC AP30G120 30G120W

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED SWITCHING TRANSISTORS FX series FTO-220 ITO-220 TO-220 ITO-3P MTO-3L MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VRM VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 3 1


    Original     		PDF FTO-220 ITO-220 O-220 2SC4051 ITO-220 2SC4663

    Transistor 126

    Abstract: transistor GR 345
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-3P 3 leads Thru-hole Fully Isolated Plastic Package Package Outline, Packaging and Handling Information Continental Device India Limited Data Sheet Page 1 of 5 TO-3P Package, Packaging and Handling


    Original     		PDF ISO/TS16949 C-120 DrawingRev151001 Transistor 126 transistor GR 345

    2SC2563

    Abstract: 2SA1093
    Text: SavantIC Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION


    Original     		PDF 2SA1093 2SC2563 -120V; 2SC2563 2SA1093

    2sc3306

    Abstract: 7 pin ic switching DC DC converter 5v to 400V
    Text: Inchange Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Collector-emitter sustaining voltageVCEO(sus)=400V(Min) ・Fast switching times APPLICATIONS ・Switching regulator and high voltage


    Original     		PDF 2SC3306 2sc3306 7 pin ic switching DC DC converter 5v to 400V

    2SD718

    Abstract: 2sd718 amplifier AMPLIFIER 2SD718 2SB688
    Text: Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SB688 APPLICATIONS ・Power amplifier applications ・Recommend for 45~50W audio frequency amplifier output stage


    Original     		PDF 2SD718 2SB688 2SD718 2sd718 amplifier AMPLIFIER 2SD718 2SB688

    2SC4531

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2SC4531 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High speed ・High voltage ・Low saturation voltage ・Bult-in damper type APPLICATIONS ・Horizontal deflection output applications PINNING


    Original     		PDF 2SC4531 19000pF 2SC4531

    2SD2386

    Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION


    Original     		PDF 2SD2386 2SB1557 2SD2386 2SB1557 NPN POWER DARLINGTON TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: Darlington Transistors /V / / y A -/<\ // " V ¿/ Darlington Power Transistors ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors Electrical Characteristics Absolute Maximum Ratings VcEO Type No. VcBO VcEO [V] [V ] 100 100 200 200 100 100 200 200 100 100 200


    OCR Scan     		PDF ITO-220 O-220 O-220 150max) ITO-220

    Untitled

    Abstract: No abstract text available
    Text: Darlington Transistors Darlington Power Transistors ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors Absolute Maximum Ratings Electrica Characteristics VcEO VcBO VcEO V ebo lc Ib Pi Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [°C] [ ”C ] 2SD1022 100 100 1023


    OCR Scan     		PDF ITO-220 O-220 2SD1022 2SB1282

    ITO-220

    Abstract: No abstract text available
    Text: High Speed Switching Transistors FX series ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VcEO V be ft ton VcE 0jc ts tf (sat) (sat) (min) (max) (max) (max) (typ) (max) (max) (max) [V ] [V] fc/w] [MHz] U s ]


    OCR Scan     		PDF ITO-220 O-220 2SC4051 O-220 ITO-220 FTO-220

    Untitled

    Abstract: No abstract text available
    Text: High Speed Switching Transistors . ITO-220 TO-220 IT0-3P MT0-3P Bipolar transistors NPN Absolute Maximum Ratings Type No. Electrical Characteristics VcBO VcEO V ebo Ic Ib Pr Tstg Tj V CEO (sus) (min) [V ] [V ] [V ] [A] [A ] [W ] re i rc ] [V ] h FE (min)


    OCR Scan     		PDF ITO-220 O-220 O-220 FTO-220 ITO-220 2SC4663

    s1854

    Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
    Text: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #


    OCR Scan     		PDF 2SC3560/1 2SC3497 2SC3626 2SC3562 2SC2552 2SC2553 2SC3625 2SC2555 2SC3306 2SK693# s1854 toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A