3SK1 Search Results

1SV211

Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
Contextual Info: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245

Contextual Info: 3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.015 pF typ. • Low noise figure: NF = 1.9dB (typ.)

Contextual Info: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. + 0.2 2 .9 - tt 3 • Superior Cross Modulation Performance.

sb30-03p

Abstract: 3SK181 DSE015 3SK189
Contextual Info: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251

3SK153

Abstract: marking TT
Contextual Info: 3SK153 SILICON N CHANNEL DUAL GATE MOS TYPE Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. FEATURES: . Superior Cross Modulation Performance. . Low Reverse Transfer Capacitacne : . Low Noise Figure Crss=0

3SK121

Abstract: 3SK114 SC4251 3SK150 S47B 3SK140 3SK152 3SK159 1SS241 DLP238
Contextual Info: T08H I 2. Discrete Semiconductors for Tuner 2-1 T ra n s is to rs a n d D iod e s fo r T u n e r ANT V R F Amp. r\ _L X £ osc 2-1-1 R F Amp. 2-1-2 M IX Dual Gat« P E T Bi-Transistor UHF VHF y -X S O T -1 4 3 *-X S O T -1 4 3 3SK114 3SK159 3SK152 3SK126 3SK160

Contextual Info: TO SHIBA 3SK127 T O S H IB A FIELD EFFECT T R A N S IS T O R S ILIC O N N C H A N N E L D U A L G A T E M O S TYPE 3 S K 1 27 Unit in mm T V T U N E R , U H F RF A M P L IF IE R A P P L IC A T IO N S + 0.2 T V T U N E R , U H F M IX E R A P P L IC A T IO N S

Contextual Info: TOSHIBA 3SK126 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 26 Unit in mm TV TUNER, VHF RF AM PLIFIER APPLICATIONS. TV TUNER VHF M IXER APPLICATIONS. + Û2 2.9 - a 3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.03pF Typ.

3sk144

Contextual Info: 3SK144 High Frequency FETs 3SK144 Silicon N-Channel 4-pin MOS Unit : mm For VHF high-gain low-noise amplification +0.2 2.8 –0.3 1.5 –0.3 Low noise-figure NF 0.65±0.15 1 3 2 +0.1 Downsizing of sets by mini power package and automatic insertion 0.95 ●

3SK107

Abstract: 0J38 3SK107 e 3sk107f
Contextual Info: 3SK107 2 0 J 1A F* f -3 r t l£ » 7 — •*• H i l f VW * r r ì V - ^ t a y - n * v - * * f £ * - h ? - V - A C Œ VD8 v a?s * * * -;■ « « * ■ um t 20 VQ !3 R ? Í R * =£7 / V *0 30 aA po 750 ■f 125 1C T«fc « * « flz-fV -5 5 ^ + 1 2 5 T e t«

3SK191

Contextual Info: HITACHI 3SK191 GaAs DUAL GATE F=T IJHr TV TUNER RF AMPLIFIER i , ! _oo^a.9S_ 1 ^ j. J . _ j _L 04:w “ 3p ¡ 2f i ' . J, _ E E-+ [4 “ " : , 111 I ¡,0 ï\r. as 1. I.B _J 1. Source 2. *o7 _ i, 7;.r -j 4. iîrriin Dinwiuknts In rnnnj X (n n V U _ U *

3SK181

Abstract: C213G Ig21 J-044
Contextual Info: 3SK181 N 'C h a n n e l E n h a n c e m e n t M O S S ili c o n F E T D u a l G ate 3044 High-Frequency General-Purpose Am p Applications 'Z 2 1 X A A p p lic atio n s . FM tunorc and VHF tuners Features . Enhancement type . Easy AGC (Cut o f f a t V G 2 S = o v >

3SK103

Abstract: Dual N FET
Contextual Info: 3SK103 km os SILIC O N N C H AN N EL D U AL GAT E MOS F E T fet IHF T V ^ a - * » * * * * * “ UHF T V T U N ER R F A M P LIF IE R I I CMC I >I €••• I F P A K IK K !* « * A B S O L U T E MAXIMUM RA TIN G S i T m - V C ] 4 Ï M > • X « s •/ -

3SK104

Abstract: 3SK137
Contextual Info: HITACHI 3SK137 SILICON N-CHANNEL DUAL GATE MOS FET UHF TV TUNER RF AMPLIFIER «W oa rU I S-aun;« ? C a ie I i C «’ ! Drji* ¡I! :nr:nn> s iri i'.lu:I dö&S MPAK-4 MAXIMUM CHANNEL PO W ER DISSIPATION CURVE ABSO LU TE MAXIMUM RATINGS (Ta=25#C) • Item

LTA 902 sx

Abstract: 3SK166
Contextual Info: 3SK166 Sony. GaAs N-channel Dual-Gate MES FET Description Package Outline 3 S K 166 is a GaAs N-channel Dual-Gate MES FET fo r lo w noise UHF am plifiers. Low noise and high gain characteristics are accom plished by optim um mask pattern design. Easier high frequency circuits adjust­

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF am plifier in UHF TV tuner. • Low Crss : 0 . 0 2 pF T Y P . • High G Ps : 18 dB TYP.

3SK143

Contextual Info: High Frequency FETs 3SK143 Silicon N-Channel 4-pin MOS FET For UHF high-gain and low-noise amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 0.65±0.15 M Di ain sc te on na tin nc ue e/ d ● Low noise-figure NF ● Large power gain PG

3SK132

Abstract: transistor 5 Amp 700 volt 3SK132A dual-gate
Contextual Info: M O S FIELD EFFEC T TRANSISTO R 3SK132A RF A M P . FOR UHF T V TUNER N-CHANNEL S ILIC O N DU AL-G ATE M O S FIELD-EFFECT TRANSISTO R 4 P IN M IN I M O LD FEATURES PACKAGE DIMENSIONS • Suitable I w u « » RF a m p lifie r io U H F T V tuner la I RF A m p fo r h a lf wave lengtn rtto n a io r . X 7

la 1201 sanyo

Abstract: 3SK107 3SK107 e V02s4 LI 1806 E 151 R
Contextual Info: SANYO SEMICONDUCTOR CORP 3SK107 15 E D I If 7n7D7b OCIOSA? N-Channel M OS Silicon Field-Effect Transistor Dual Gate 2031A High Frequency GeneralPurpose Amp Applications Use • FM tuners and VHF tuners Features • High power gain and small noise figure

3SK195

Contextual Info: 3SK195 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR Unit in mm TV TU N ER , VHF RF A M P LIF IE R A PP LIC A T IO N S . FM TU N ER A P P LIC A TIO N S. • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.

mixer diode

Abstract: tv sony 1435 3SK147 N-Channel, Dual-Gate FET 04 6824 6 dual-gate
Contextual Info: iï^NTr 3SK147 GaAs N-channel Dual-Gate MES FET D e s c rip tio n : The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain characteristics and low operating voltage are accomplished by optimum mask pattern design. Simplified high frequency

3SK153

Abstract: 52S marking SK153 200-I
Contextual Info: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS • • • + 0.2 2 .9 Superior Cross Modulation Performance.

3SK195

Contextual Info: 3SK195 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK195 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.015 pF typ.

3SK154

Abstract: 3sk96
Contextual Info: HITACHI 3SK154 SILICON N-CHANNEL DUAL GATE MOS FET VHFAMÄ'iFIER" VHP TV TUNER RF AMPLIFIER « J il _ .!.» - . I. Se«.i«vc 2 < U te l y U w } 4 Tit.m <r O i O iiiïr is v ÿ .in V I - j - i ~ .~ - I ~.P'. — i (MPAK-4 MAXIMUM CHANNEL POWER