3SK23 Search Results

1SV211

Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
Contextual Info: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245

3SK232

Contextual Info: 3SK232 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK232 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance.: Crss = 20 fF typ. • Low noise figure.: NF = 1.5dB (typ.)

Contextual Info: TOSHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK232 TV TUNER, UHF RF AM PLIFIER APPLICATIONS nTT Unit in mm • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. : NF = 1.5dB (TYP.)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain G ps = 17.5 dB TYP. (@ = 900 MHz)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz High Power Gain Gps PACKAGE DIMENSIONS (Unit: mm) = 17.5 dB TYP. (@ = 900 MHz)

3SK239A

Abstract: Hitachi DSA00307
Contextual Info: 3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB Typ at f = 900 MHz • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

Contextual Info: 3SK239A GaAs Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics • Capable of low vol tage operation NF = 1.3 dB Typ at f = 900 MHz Outline CMPAK-4 4 1. 2. 3. 4. Source Gatel Gate2 Drain 1093 3SK239A

3SK235

Contextual Info: HITACHI 3SK235-Silicon N Channel Dual Gate MOS FET UHF/VHF TV Tuner RF Amplifier Features MPAK-4 • Low voltage operation. • High gain, low noise. Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Drain to source voltage VDS

marking 7T transistor

Contextual Info: TO SHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK232 O TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. • Low Noise Figure.

IG2U

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK—4 .A 3 , HHptft td itltO A n ic lä f ^ 1 . Source

marking g1s

Abstract: 3SK238
Contextual Info: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

3SK232

Contextual Info: 3SK232 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK232 TV Tuner, UHF RF Amplifier Applications • Unit: mm Superior cross modulation performance. • Low reverse transfer capacitance.: Crss = 20 fF typ. • Low noise figure.: NF = 1.5dB (typ.)

Contextual Info: 3SK232 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK232 TV Tuner, UHF RF Amplifier Applications • Unit: mm Superior cross modulation performance. • Low reverse transfer capacitance.: Crss = 20 fF typ. • Low noise figure.: NF = 1.5dB (typ.)

Contextual Info: TO SHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3S K232 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance. : Crss = 20fF TYP. : NF = 1.5dB (TYP.)

Contextual Info: SILICON N CHANNEL DUAL GATE MOS T Y P E FIELD E F F E C T TRANSISTOR 3SK232 O TV TUNER, UHF RF A M PLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : C rss = 20fF T YP. • Low Noise Figure. : N F = 1.5dB (T YP.)

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. Unit: mm CM = 108 d B /i (TYP.) @ f = 470 MHz, G r = -3 0 dB

MESFET Application

Abstract: 52s marking MARKING 52S
Contextual Info: HITACHI 3SK239A-GaAs N-Channel Dual Gate MESFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 4 1. 2. 3. 4. Source Gatel Gate2

3SK236

Contextual Info: 3SK236 Silicon N–Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C

Contextual Info: TOSHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3 <; k i * mm m t • m. O TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. « r j U nit in mm r -e • Low Reverse Transfer Capacitance. : Crss = 20f!F TYP.

3SK231

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)

3SK232

Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK232 O TV TUNER, UHF RF AM PLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. • Low Noise Figure. : NF = 1.5dB (TYP.) M A X IM U M RATINGS (Ta = 2 5°C)

NEC k 1760

Abstract: UAA 146 3SK230 UAA 2001
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB

3sk239a

Abstract: Hitachi DSA001650
Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK239A