3SK24 Search Results

l20pF

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.

1SV211

Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
Contextual Info: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245

sb30-03p

Abstract: 3SK181 DSE015 3SK189
Contextual Info: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251

lz 02

Abstract: 3SK240 TTA25A200A
Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK240 U nit in mm T V TUNER, UHF RF AMPLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate2-Drain Voltage Gatel-Source Voltage Gate2-Source Voltage G atel Current Gate2 Current

3SK249

Abstract: MARKING N2
Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS. 2.1 + 0 . 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ.

ok857

Contextual Info: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. + 0.2 2.9 -0 .3 1.90 —r lit 1 2 FT - <O£> 3 -1- r cf- 0.55 MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Gatel-Drain Voltage

S3V 05

Abstract: S3V 03
Contextual Info: TO SH IBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS + 0.2 2 .9 -0 .3 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Gatel-Drain Voltage Gate2-Drain Voltage Gatel-Source Voltage

3SK246

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK246 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • PACKAGE DIMENSIONS Unit : mm The C haracteristic of C ross-M odulation is good.

3SK242

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : G Ps = 24 dB TYP. f = 200 MHz

Contextual Info: 3SK249 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure.: NF = 1.5dB (typ.)

N4540

Abstract: 3SK248 ITR02866 ITR02867 ITR02868 ITR02869 ITR02870 ITR02871 ITR02872 NO454
Contextual Info: 注文コード No. N 4 5 4 0 3SK248 No. N4540 70999 3SK248 特長 N チャネルエンハンスメント MOS 形シリコン電界効果トランジスタ ミューティング / スイッチング用 ・バックゲート端子付 MOS FET。 ・エンハンスメントタイプである。

Contextual Info: TO SHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS. + 0.2 2.9 -0 .3 90 L it 1 1.90 4 2 3 f PT 0 .55 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gatel-Drain Voltage

DJ-BG

Abstract: 3SK248 AX-7919 2100A MARKING OBG ns4540
Contextual Info: Ordering number : EN 4 5 4 0 3SK248 No.4540 N-Channel Enhancement MOS Silicon FET Muting/Switching Applications F eatures •MOS FET with a back gate terminal. • Enhancement type. • Small ON resistance. • Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer.

3SK240

Contextual Info: 3SK240 TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK240 TV Tuner, UHF RF Amplifier Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1D0 −9 V Gate 2-drain voltage VG2D0 −9

3SK245

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK245 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain G ps = 23.0 dB TYP. @ = 900 MHz • Low Noise Figure NF = 2.4 dB TYP. (@ = 900 MHz)

tv circiut

Abstract: 3SK240 domestic UPS circuits
Contextual Info: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. +0.2 2.9 - 0 .3 —r lit 1 - <£> Ö 1.90 4 2 3 -I- 0 .5 5 MAXIMUM RATINGS Ta = 25°C SYMBOL VG1D0 VG2D0 VG1S VG2S

Contextual Info: TO SHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 TV TUNER, UHF RF AM PLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 20fF Typ.

3SK249

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 20fF Typ. • Low N oise Figure. : N F = 1.5dB (Typ.)

aatj

Abstract: 3SK240
Contextual Info: TO SH IBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS + 0.2 2 .9 -0 .3 r MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Gatel-Drain Voltage Gate2-Drain Voltage Gatel-Souree Voltage

3SK249

Abstract: marking L4 toshiba
Contextual Info: 3SK249 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure.: NF = 1.5dB (typ.)

3SK242

Abstract: SK242
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. f = 200 MHz

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK245 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain G • Low Noise Figure NF = 2.4 dB TYP. @ = 900 MHz ps = 23.0 dB TYP. (@ = 900 MHz)

3SK249

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 20fF Typ. • Low Noise Figure. : NF = 1.5dB (Typ.)

3SK241

Abstract: 2V040
Contextual Info: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.