3SK28 Search Results

3SK284

Contextual Info: TOSHIBA 3SK284 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK284 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C SYMBOL VG1D0 v G2DO VG1S VG2S lGl <N Oi i— CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage

3SK286

Abstract: 4-PIN MARKING
Contextual Info: High Frequency FETs 3SK286 Silicon N-Channel MOS FET For VHF amplification unit: mm +0.2 2.8 –0.3 • Features ● Low noise-figure NF ● Large power gain PG ● Small variation (∆Ciss) of the input capacitance during AGC operation ● Mini-type package, allowing downsizing of the sets and automatic

Contextual Info: TOSHIBA 3SK284 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3 s K2 84 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage

3SK283

Contextual Info: GaAs N CHANNEL DUAL GATE MES TYPE FIELD EFFECT TRANSISTOR 3SK283 T V TU N ER , UHF RF A M P LIF IE R A P P LIC A T IO N S . M A X IM U M RATIN G S Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage

3sk285

Contextual Info: 3SK285 High Frequency FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95

3sk285

Contextual Info: 3SK285 High Frequency FETs 3SK301 Tentative , 3SK305(Tentative) Silicon N-Channel MOS 3SK301 For VHF amplification 1.5 –0.3 0.65±0.15 0.5R 0.95 1.9±0.2 4 1 3 2 +0.1 0.4 –0.05 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the conventional product.

Contextual Info: 3SK285 High Frequency FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95

Contextual Info: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3 S K2 8 3 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage

3sk284

Contextual Info: TOSHIBA 3SK284 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK284 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage

Contextual Info: T O S H IB A 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage

Contextual Info: High Frequency FETs 3SK286 Silicon N-Channel MOS FET For VHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 0.65±0.15 M Di ain sc te on na tin nc ue e/ d ● Low noise-figure NF ● Large power gain PG ● Small variation (∆Ciss) of the input capacitance during AGC operation

3SK286

Contextual Info: High Frequency FETs 3SK286 Silicon N-Channel MOS FET For VHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 Unit VDS Symbol 15 V Gate 1 to Source voltage VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current

TRANSISTOR marking 789 code

Contextual Info: H ITACHI 3SK288-Silicon N Channel Dual Gate MOS FET Application V HF TV tuner RF amplifier MPAK-4 Features • Low nose figure. NF = 1.5 dB typ.at f = 200 MHz • High gain. PG = 28.5 dB typ.at f = 200 MHz 1. 2. 3. 4. Source Gate 1 Gate 2 Drain

Q2SC

Contextual Info: Panasonic High Frequency FETs 3SK286 Silicon N-Channel MOS FET For VHF a m p lific a tio n unit: mm • Features 0 Low noise-figure NF 0 Large power gain PG 0 Small variation (ACiss) of the input capacitance during AGC operation 0 Mini-type package, allowing downsizing of the sets and automatic

Nf804

Abstract: 3SK284
Contextual Info: 3SK284 GaAs N CHANNEL DUAL GATE MES TYPE FIELD EFFECT TRANSISTOR U nit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC G ate 1-D rain V oltage G ate 2-D rain V oltage G ate 1-Source V oltage G ate 2-Source V oltage

3SK285

Contextual Info: High Frequency FETs 3SK285 Silicon N-Channel MOS FET For UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 VDS 13 V Gate 1 to Source voltage VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current ID

3SK285

Abstract: 4-PIN MARKING
Contextual Info: High Frequency FETs 3SK285 Silicon N-Channel MOS FET For UHF amplification unit: mm +0.2 2.8 –0.3 • Features ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

Contextual Info: 3SK285 High Frequency FETs 3SK303 Tentative , 3SK307(Tentative) Silicon N-Channel MOS 3SK303 For VHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95

3sk283

Abstract: Y025
Contextual Info: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm MAXIMUM RATINGS Ta = 25°C SYMBOL VG1D0 v G2DO VG1S VG2S lGl <N Oi i— CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage

Contextual Info: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage

3sk285

Contextual Info: High Frequency FETs 3SK285 Silicon N-Channel MOS FET For UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 0.65±0.15 M Di ain sc te on na tin nc ue e/ d ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic

3SK284

Abstract: tv circiut
Contextual Info: TOSHIBA 3SK284 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK284 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage

3sk283

Contextual Info: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AM PLIFIER APPLICATIONS Unit in mm M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage

3SK288

Abstract: transistor zo 107 Hitachi DSA00498
Contextual Info: 3SK288 Silicon N Channel Dual Gate MOS FET Application VHF TV tuner RF amplifier MPAK-4 Features 2 3 • Low nose figure. NF = 1.5 dB typ.at f = 200 MHz • High gain. PG = 28.5 dB typ.at f = 200 MHz 1 4 1. Source 2. Gate 1 3. Gate 2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C