3TG 21 Search Results

VHE708

Abstract: MCE101 VHE706 VHE707
Contextual Info: MICROSEMI CORP/ HICRO 5bE ]> • bllS'iO? Ü0Q1371 3TG 'T-O'drl0! MICRtii OUALITY / S E M IC O N D U C T O R , IN C 25 Amp Epitaxial High Efficiency Rectifiers IMÜL do -4 300V, 400V, 500V, 600V High Surge Capability Ultra-Fast Switching Speeds Low Thermal Resistance

SE236

Contextual Info: MICRO N S E M I C O N D U C T O R INC b7E ]> • b l l l S M T ODD'îSGD 3TG H M R N ADVANCE U IIC R Q M MT5LC512K8D4 REVOLUTIONARY PINOUT 512K x 8 SRAM SRAM 512Kx 8 SRAM 3.3V OPERATION WITH OUTPUT ENABLE, REVOLUTIONARY PINOUT • All I / O pins are 5V tolerant

Contextual Info: Frequently Asked Questions Rev F Conflict Minerals 1. Does Ecliptek have a Conflict Minerals Policy Statement? Ecliptek Corporation’s Conflict Minerals Policy Statement can be found on our website. 2. What minerals are considered conflict minerals? Conflict minerals, regardless of their origin, include columbite-tantalite tantalum , cassiterite (tin), wolframite

2SJ120

Abstract: 2SK416 2SJ120S 2SK416L C3S30
Contextual Info: 2S K 416 L ,2S K 416 s y U =1> N 9 V * JUMOS FET_ SILICON N-CHANNEL MOS FET *»*• «* y f >9 ñ 2SJ120 L ,2SJ120 § t =1> HIGH SPEED POW ER SWITCHING Complementary pair with 2SJ120 , 2SJ120S * > £ V T=P (DType 1. 2. Y — h ! G ate Y V -{ y \ D rain

Contextual Info: MICRO QUALITY / S E M IC O N D U C T O R . INC. 2 Amp Epitaxial High Efficiency Rectifiers 300 To 600 Volt VRRM Low Leakage High Surge Capability Ultra Fast Switching Speeds Glass Passivated LTR. IN C H E S M IL L IM E T E R S A B C D E -030-.034 Dia. 1 0 -1 0 7 Dia.

transistor k 4212 fet

Abstract: gd 361 transistor
Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm

Contextual Info: ö 2 3 S d GS SIEMEN! O O aC H ll SIEMENS 1 S IE ö AKTIENGESELLSCHAF M7E T V 3 9 -/5 SIMOPAC® MOSFET Modules v03 = 800 v l0 = 36 A 0.24 Q BSM 181 (C BSM 181 R ^ D S (o n ) = • • • • • • Power module Single switch N channel Enhancement mode

21000sw

Abstract: 2044B 2SB1215
Contextual Info: Ordering num ber:EN2539B 2SB1215/2SD1815 No.2539B PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i High-Current Switching Applications A p p lic a tio n s • Relay drivers, applications. high-speed inverters, converters, and other general high-current

Contextual Info: 1S2 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD, 1S 10 T E C H N IC A L S P E C IF IC A T IO N S O F S C H O T T K Y B A R R IE R R E C T IF IE R VOLTAGE RANGE - 20 to 100 Volts C U R R EN T- 1.0 Ampere FEATURES * Low power loss, high efficiency

Contextual Info: AN6886 AN6886 5-Dot LED Driver Circuit • Description T he A N 6886 is a m onolithic in teg rated c ircu it driv in g 5L E D and is capable o f logarithm ic dB b a r graph display for input signal. It incorporates 2 rectification amp. w hich is capable o f gain

westcode n 600 ch 14

Contextual Info: WESTCODE SEMICONDUCTORS Capsule Phase Control Thyristor C o n s is ts o f a d iffu s e d s ilic o n e le m e n t m o u n te d in an h e rm e tic c e ra m ic c o ld w e ld e d c a p s u le , a n d fe a tu re s an a m p lify in g g a te . A v a ila b le in in d u s try s ta n d a rd h o u s in g a n d th in h o u s in g s .

Contextual Info: Panasonic Other MOS LSIs MN65703T Low Power 8-Bit, 3-Channel CMOS D/A Converter for Image Processing • Overview Pin Assignment The MN65703T is a high-speed 8-bit, 3-channel CMOS digital-to-analog converter. Two channels use serial in­ put. It uses both a matrix cell and weighted current technol­

Contextual Info: ~T~- 1 4 C C t-0 JonU E H R 9/89 1 N 2225-K Martin Avenue, Santa Clara, CA 95050 (408 492-1400 FAX (408)492-1500 C O M P O N E N T S 5 to 500 MHz TO-8 Cascadable Amplifier High Output Level . High Efflcency . High Third Order I.P. .

PCR 046 j

Abstract: 9721 elat
Contextual Info: 14 MC68HC705BD3 The MC68HC705BD3 is functionally equivalent to MC68HC05BD3, but with increased R A M size to 256 bytes and the user ROM is replaced by an 7.75K-bytes user EP R O M located from $2000 to $3EFF . The entire MC68HC05BD3 data sheet applies to the MC68HC705BD3, with

semikron skkt 90

Abstract: semikron skkt 41 SKKT41/12E skkt 103 T25-17 SKKT 330 16E SKKT 56/12 E semikron skkt skkt41/04 semikron skkt 55
Contextual Info: S E M I K R O N INC 3tE » « 1 3 b b 71 Q D G 22 70 7 • SEKG ■ t */rsm V rrm d v / V drm dt cr 75 A V /(is 48 A Itrm s (m aximum values for continuous operation) | 95 A | 75 A | 95A Itav (sin. 180; Tease = 74 °C) V V 60 A S EM IK R D N -z s n 48 A 60 A

F1S45N06

Abstract: MOSFET S1A M n10 ece
Contextual Info: ÎS 3 H A R U Ü S i “ ' " R " RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM I S " T" 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC STYLE TO-247 • 45A , 60V SOURCE • rDS ON = 0 -02 8 U • Temperature Compensating PSPICE Model

Cdb450c24

Abstract: 5PNR-2876Z Cdb450 CFWM450G BA4116FV g015b K4-18 SSOP-B16 CFWM450 BM116FV
Contextual Info: Communication ICs FM IF detector for cordless telephones I BA4116FV The BM 116FV is an IC with an internal mixing circuit, IF circuit, wave detection circuit, RSSI circuit, and noise detec­ tion circuit. Because it can operate at low voltages, it is ideal for use in cordless telephones.

Contextual Info: KM62256C Ll/C LI - L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range i -40 to 85°C • Fast Access Time : 70,100ns Max. • Low Power Dissipation Standby (CMOS) : 275,«W(Max.) Operating : 110mW(Max.)

Philips NME

Abstract: 74LVT2952 74LVT2952D 74LVT2952DB 74LVT2952PW LVT2952
Contextual Info: NAPC/PHILIPS SEMICOND b3E » • bbSBTSM 0084173 flOT « S I C 3 Philip* Semiconductors Low Voltage Product* Objective »pacification 3.3V ABT Octal registered transceiver 3-State FEATURES • • • • • 8-bit registered transceiver Independent registers for A and B buses

Contextual Info: EUPEC T178N 52E D • 3HD3BT7 000D713 S S 1! ■ U P E C 7 - 2 6 - /9 TVpenrelhe/Type range T 178 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDrm>VRRM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom

in5347b

Abstract: in5352b IN5378B in5388b IN5365B in5349b in5359b IN5383B IN5362B in5346b
Contextual Info: FAGOBt _ S7E » • 345^355 ÜQD0770 TT1 « F G R S 1N5345B.1N5388B FAGOR ELECTRONICS 5 WZener Diodes Dimensions in mm. ■ N DO-201AE Plastic N H n~-U-lS q H Voltage 8.7 to 200 V Power 5.0 W Standard Voltage Tolerance is ± 5% Mounting instructions

HN27C1024HG-85

Abstract: HN27C1024H HN27C1024HG-10
Contextual Info: HN27C1024H Series 1M 64K x 16-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C1024H is a 1-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 65,536 x 16-bits. The HN27C1024H features fast address access times of 85,

PCF84C81A

Abstract: MAB8048 PCF84C21 PCF84C21A PCF84C21AP PCF84C41A PCF84C81 pcf84c81ap PCF85XX PCF84C81AP/144/F2
Contextual Info: Philips Sem iconductors Preliminary specification PCF84C21 A, PCF84C41A, PCF84C81A Telecom Microcontroller FEATURES GENERAL DESCRIPTION • 8-bit CPU, ROM, RAM, I/O in a single 28-lead package This data sheet details the specific properties of the PCF84C21A, PCF84C41A and PCF84C81 A. The shared

Contextual Info: S P SPT7 7 1 0 T 8-BIT, 150 MSPS FLASH A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • Metastable Errors Reduced to 1 LSB Low Input Capacitance: 10 pF Wide Input Bandwidth: 210 MHz 150 MSPS Conversion Rate