3X105 Search Results

260GF

Contextual Info: SERIES EDO 6.2x6.2 mm SMT HEIGHT FROM PCB H Qty Reel Y 2,5 mm 2000 W 3,5 mm 1000 J 5,2 mm 1000 2,5 mm Tape Specification 6,2 mm 6,2 mm OPERATING FORCE - LIFE Cycles Operating Force 1 160±50gf 2 160±50gf 3 260±70gf Life (Cycles) 1x105 5x105 3x105 TERMINAL

Contextual Info: TACT SWITCHES AUTOMATIC INSERT Radial Tape SERIES EDT • Radial Terminals • 6x6 mm size E D - T Height from PCB (h) Operating Force Life (Cycles) A B C D 1 100±50gf 2 160±50gf 3 260±70gf 5x105 3x105 1x105 4.3 5.0 7.0 9.5 mm mm mm mm SPECIFICATIONS

Contextual Info: Automation Controls Catalog Relay for control panel of 1c 15A, and 2c 10A RoHS compliant HL RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact high-capacity control relay In the same external dimensions as an HC relay, this compact power relay enables high-capacity control:

GEC Plessey Semiconductors cross reference

Abstract: BMA31751 MA17501 MA17502 MA17503 MA31751 MAS281 AD00 TI MIL-STD-1750A E04A
Contextual Info: MAS281 MAS281 MIL-STD-1750A Microprocessor Replaces June 1999 version, DS3563-4.0 The MAS281 Microprocessor is a MIL-STD-1750A Notice 1 , 16-bit Central Processing Unit (CPU). It consists of three CMOS/SOS large-scale integration (LSI) chips: the MA17501

A1512

Abstract: MA28137 "silicon on sapphire" LAT-3 A15-12 MAS281 microprocessor radiation hard
Contextual Info: MA28137 Marconi Electronic Devices Radiation Hard Program m able D M A C ontroller GENERAL DESCRIPTION FEATURES_ The MA28137 Direct Mem ory Access D M A controller is a p e r i p h e r a l interface circuit designed for MAS281-based

HX6408

Contextual Info: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)

Contextual Info: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

TDC1010

Abstract: "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 IDT7210 ma7010 Marconi radiation hard
Contextual Info: MA7010 Marconi Electronic Devices D. + . u. .on ^ a r . ^ A ccum u|ator Signal S lic e T M APPLICATIO NS FEATU RES • Radiation Hard To 1 MRad (Si) • Fast Fourier transform processing • H igh SEU im m unity, Latch-up free • Array processing • Silicon-on-Sapphire technology

V23086

Abstract: V23086-R1801-A403 V23086-R1802-A803 V23086-C1001-A402 tyco V23086-c1001-a403
Contextual Info: Automotive Relays PCB Single Relays Micro Relay K THT – THR n Small power relay continuous current 30A n Low weight n Low noise operation n Wave (THT) and reflow (THR/pin-in-paste) solderable versions n Limiting Typical applications Car alarm, door control, door lock, heated front/rear screen, immobilizer,

T810S-A008C

Abstract: relay 6vdc
Contextual Info: T810S-A008C E L E C T R O N I C S 汽 车 继 电 器 TRS ● 30A 13.5VDC switching rating ● 40A inrush at 13.5VDC ● Smallest power relay ● 1 Form A and 1 FormC arrangements in single and dual relay packages ● For Automotive Applications ● Conform to RoHS,ELV directive

honeywell hr 20

Abstract: HC1773 crystal oscillator burn-in data
Contextual Info: Military & Space Products Advance Information DUAL RATE 1773 FIBER OPTIC TRANSCEIVER HC1773 FEATURES • Fabricated with RICMOS IV Bulk CMOS 0.8 µm Process Leff = 0.65 µm • 1Mbps or 20Mbps 1773 format • Total Dose Hardness of ≥3x105 rad(SiO2)

Contextual Info: P jjp i G E C P L E S S E Y DS3587-3.3 MA3690/1/3 1553B BUS CONTROLLER/REMOTE TERMINAL The MA3690/1 chip set has three modes of operation: remote terminal, bus controller, and passive monitor It has a dual bus capability, requires minimum support hardware /

Contextual Info: 51 GEC PLESSEY PR ELIM IN A R Y INFO R M ATIO N S E M I C O N D U C T O R S DS3748-4 2 MA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The GEC Plessey MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and

Contextual Info: CN-H ACNH HIGH LOAD RELAY FOR SMART J/B CN-H RELAYS (ACNH) FEATURES TYPICAL APPLICATIONS • Best space savings in its class. • Large capacity switching despite small size. Can replace micro ISO terminal type relays. • Terminals for PC board pattern

Contextual Info: Si GEC P I E S S E Y SE M I CO N D U CT O RS DS3578-2 4 MA2910 RADIATION HARD MICROPROGRAM CONTROLLER The industry standard MA2910 Microprogram Controller forms part of the MA2900 family of devices. Offering a building block approach to microcomputer and controller design, each device in the range is expandable

ARE1003

Abstract: ARE1006 ARE1009 ARE1012 ARE1024 ARE104H ARE10A03 ARE10A06 ARE10A09 ARE10A12
Contextual Info: RE ARE RE RELAYS (ARE) 2.6 GHz SMALL MICROWAVE RELAYS FEATURES 20.2 .795 11.2 .441 • Excellent high frequency characteristics (to 2.6GHz) 8.9 .350 20.2 .795 Type 11.2 .441 9.6 .378 mm inch Impedance 50Ω Impedance 75Ω Frequency V.S.W.R. (Max.) Insertion loss

Contextual Info: w GEC PLESS EY S E M I C O N D U C T O R S DS3587-3.3 MA36901 3 1553B BUS CONTROLLER/REMOTE TERMINAL The MA3690/1 chip set has three modes of operation: remote terminal, bus controller, and passive monitor It has a dual bus capability, requires minimum support hardware /

Contextual Info: MARCH 1995 MA31750 DS3748-6.5 MA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The GEC Plessey MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and

Contextual Info: APRIL 1995 MA31753 PRELIMINARY INFORMATION DS3825-3.2 MA31753 DMA CONTROLLER DMAC FOR USE IN AN MA31750 SYSTEM The MA31753 Direct Memory Access Controller (DMAC) is a peripheral interface circuit design primarily for use with the MA31750 microprocessor. Each DMAC provides up to four

Contextual Info: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 |iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)

900-197

Abstract: SMD transistor Marking 1x smd marking WMM
Contextual Info: Honeywell Aerospace Electronics A d van ce Inform ation 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j,m Process (Lefl = 0.6 |im) • Fast Read/Write Cycle Times < 15 ns (Typical)

Contextual Info: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)