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    3X1600 Search Results

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    Eaton Bussmann E3X160091G20

    CRYSTAL 3225 16MHZ 9PF 10PPM
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    DigiKey () E3X160091G20 Digi-Reel 200 1
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    E3X160091G20 Cut Tape 200 1
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    E3X160091G20 Reel 3,000
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    Eaton Bussmann E3X160082ZA1

    CRYSTAL 3225 16MHZ 08PF 20PPM
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    DigiKey () E3X160082ZA1 Cut Tape 200 1
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    E3X160082ZA1 Digi-Reel 200 1
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    E3X160082ZA1 Reel 3,000
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    Eaton Bussmann E3X160081X15

    CRYSTAL 3225 16MHZ 8PF 10PPM
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    DigiKey () E3X160081X15 Cut Tape 199 1
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    E3X160081X15 Digi-Reel 199 1
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    E3X160081X15 Reel 3,000
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    IXYS Corporation GMM3X160-0055X2-SMD

    MOSFET 6N-CH 55V 150A 24SMD
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    IXYS Corporation GMM3X160-0055X2-SMDSAM

    MOSFET 6N-CH 55V 150A 24SMD
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    3X1600 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055X2 3x160-0055X2 PDF

    Contextual Info: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055X2 3x160-0055X2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    IXYS GMM 3x160-0055X2

    Abstract: marking G3 smd diode g6 3x160-0055X2
    Contextual Info: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055X2 3x160-0055X2 IXYS GMM 3x160-0055X2 marking G3 smd diode g6 PDF

    MTI120WX55GD

    Abstract: s4 35 diode marking code
    Contextual Info: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x160-0055X2 3x160-0055X2 MTI120WX55GD s4 35 diode marking code PDF

    IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance

    Abstract: MOSFET OF K SERIES IXYS GMM 3x160-0055X2 IXYS Corporation power mosfet smd package
    Contextual Info: IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance Biel, Switzerland, May 14, 2009 – IXYS Corporation NASDAQ: IXYS announced today the extension of the ISOPLUS-DILTM package range using the latest generation TrenchMVTM


    Original     		PDF

    3x120-0075X2-SMD

    Abstract: GMM 3x180-004x2 IXYS GMM 3x160-0055X2 Measurement of the circuit stray inductance L 3x100-01X1 single phase moulded bridges
    Contextual Info: ISSN: 1863-5598 Electronics in Motion and Conversion ZKZ 64717 10-09 October 2009 COVER STORY ISOPLUS-DIL Series Designed for Highest Reliability The GWM series in ISOPLUS-DIL™ package Dual-In-Line has been developed to production standard. It is a transfer moulded module which combines the advantage of a


    Original     		3x100-01X1-SMD 3x60-015X1-SMD 3x120-0075X2-SMD GMM 3x180-004x2 IXYS GMM 3x160-0055X2 Measurement of the circuit stray inductance L 3x100-01X1 single phase moulded bridges PDF

    Contextual Info: GMM 3x160-0055X2 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055X2 3x160-0055X2 PDF