4 BANKS X 1M X 32BIT SYNCHRONOUS DRAM Search Results

1M x 32 x 4

Abstract: HY57V283220 HY57V283220T
Contextual Info: HY57V283220T 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The HY57V283220T is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T is organized as 4banks of 1,048,576x32.

HY5V22GF

Contextual Info: HY5V22GF 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32.

Contextual Info: HY5V22GF 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32.

HY5V22GF

Abstract: HY5V22GF-H HY5V22GF-P refresh logic
Contextual Info: HY5V22GF 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32.

86-TSOP

Contextual Info: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of

86-TSOP

Contextual Info: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of

pin diagram of 2 to 4 decoder

Abstract: HY57V283220 HY57V283220T HY5V22F
Contextual Info: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of

Contextual Info: Preliminary HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of

Contextual Info: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of

truth table for 8 to 3 decoder

Abstract: HY57V283220
Contextual Info: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as

Contextual Info: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as

Contextual Info: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as

K4D263238

Abstract: K4D263238M-QC40
Contextual Info: 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.0 December 2000 Samsung Electronics reserves the right to change products or specification without notice.

400M

Abstract: NT5DS4M32EG QA47
Contextual Info: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice. REV 1.1

4 Banks x 1m x 32Bit Synchronous DRAM

Contextual Info: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added

HY57V283220

Contextual Info: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added

Contextual Info: 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.0 February 2003 Samsung Electronics reserves the right to change products or specification without notice.

K4D263238D

Abstract: K4D263238D-QC40 K4D263238D-QC50
Contextual Info: 128M DDR SDRAM K4D263238D 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.3 July 2002 - 1 - Rev. 1.3 Jul. 2002 128M DDR SDRAM K4D263238D Revision History Revision 1.3 (July 18, 2002)

Contextual Info: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.

Contextual Info: 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 April 2003 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.

Contextual Info: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.

K4D263238A-GC36

Abstract: K4D263238A-GC40 K4D263238A-GC45 K4D26323RA-GC36
Contextual Info: 128M DDR SDRAM K4D263238A-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.9 July 2002 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.