4 MARKING CODE SOT 89 Search Results

TR13

Abstract: 4868
Contextual Info: Package Details SOT-89 Case Mechanical Drawing BOTTOM VIEW Lead Code: Part Marking: Full Part Number Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R4 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details SOT-89 Case

Contextual Info: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DN-*, where ★ is hFE code • excellent current-to-gain characteristics • 2S02153 (MPT3) ♦0.2 4-5 —0.1 1.6 * 0.1

BCP1898

Contextual Info: BCP1898 1A, 100V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1898 is designed for switching applications. MARKING 4 1 189 8 2 3 A Date Code E

147 B transistor

Abstract: Transistor 2SB 148 2SB1386 2sb transistor
Contextual Info: 2SB1386 Transistor, PN P Features Dimensions Units : mm available in MPT3 (MPT,SOT-89 SC-62) package package marking: 2SB1386; BH-*, where ★ is hFE code 2SB1386 (MPT3) low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = -4 A/-0.1A

Contextual Info: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A

Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05

2SB1132

Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q
Contextual Info: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE

marking EB 202 transistor

Abstract: 2SC4672 transistor 2SC4672 ZE TRANSISTOR MARKING
Contextual Info: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package 2SC4672 (M PT3) +0.2 4 .5 —0 1 • • • package marking: 2SC4672; DK-fr, where ★ is hFE code 1.6 * 0.1 zE L if low collector saturation voltage,

2sc4672 marking

Abstract: 2SC4672 transistor dk 50 5F marking code transistor dk transistor TRANSISTOR dk q FR210 ZI Marking Code transistor TRANSISTOR 2SC T100
Contextual Info: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SC4672; D K *, where ★ is hFE code • 2SC4672 (MPT3) s _t 0o -2 4/i .5 .i 1.6±0.1 IS". if low collector saturation voltage,

Contextual Info: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics

BSP296

Abstract: E6327 Q67000-S067 VPS05163
Contextual Info: BSP296 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 100 V • Enhancement mode RDS on 0.7 Ω • Logic Level ID 1.1 A • dv/dt rated SOT-223 4 3 2 1 VPS05163 Type Package Ordering Code Tape and Reel Information Marking

E6327

Abstract: Q67000-S652
Contextual Info: BSP 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSP 89 240 V 0.36 A 6Ω SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652 Pin 3 Pin 4

E6327

Abstract: Q67000-S652 sot 223 marking code BSP
Contextual Info: BSP 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 89 240 V 0.36 A 6Ω SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652

SOT-89 KA

Abstract: E6327 Q67000-S506 marking BSs
Contextual Info: BSS 87 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSS 87 240 V 0.29 A 6Ω SOT-89 KA Type BSS 87 Ordering Code Q67000-S506

BSS 89

Abstract: E6327 Q67000-S506 marking BSs
Contextual Info: BSS 87 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSS 87 240 V 0.29 A 6Ω SOT-89 KA Type BSS 87 Ordering Code Q67000-S506 Pin 3 Pin 4 S

E6327

Abstract: Q67000-S652
Contextual Info: BSP 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSP 89 240 V 0.36 A 6Ω SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652 Pin 3 Pin 4

2SD1766

Contextual Info: 2SD1766 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1766; DB-*, where ★ is hFg code • • • 2SD1766 (MPT3) +0 2 4 5 —0.1 1 .6 * 0 1 m Ö 1 %2 ¿L. R : H I 1 P q = 2 W, when mounted on 40 x 40 x

1SS SOT-23

Abstract: 1SS TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed

Contextual Info: A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E s a t TRAN SIST OR IN SOT -89 Features • • • • • • • • • • Mechanical Data BVCEO > -200V BVECO > -2V Continuous current IC(cont) = 2A VCE(sat < -160mV @ -1A RCE(sat)=130mΩ

marking CODE W2D

Abstract: marking w2d
Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

V = Device Code

Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS

V = Device Code

Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: MC74VHC1G00
Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.