4 W 620 Search Results

Contextual Info: g MOTOROLA 4 x 4 MULTIPORT REGISTER T h e M C 1 4 5 8 0 6 is a 4 by 4 m u ltip o rt register useful in small scratch pad memories, arithm etic operations w hen coupled w ith an adder, and other data storage applications. It allows independent reading o f any tw o words (or the same w ord at both outputs) w hile

Contextual Info: REVISION BY TABLE T E R M IN A L TERMINAL SPEC -0 5 W -0 6 » -0 7 -0 8 w -0 9 -1 0 -11 -1 2 -1 3 -1 4 3 -1 5 » -1 6 -1 7 (» -1 8 w -1 9 w -2 0 w -21 -2 1 o> -2 2 - 2 3 (» -2 4 « -2 5 w -2 6 w -2 7 -2 8 - 2 9 (4) — 30 (4) P IN #1 T -1 S 6 — 21— X - 2

JUMPER-0805

Abstract: eia marking code
Contextual Info: Thick Film Chip Resistors NRC Series FEATURES 1/16 0.063 W 25V 50V NRC06 0603 1/10 (0.10) W 50V 100V NRC10 NRC12 0805 1/8 (0.125) W 1206 1/4 (0.25) W 150V 200V 300V 400V NRC25 1210 1/3 (0.33) W 200V 400V NRC50 2010 3/4 (.75) W 200V 400V NRC100 2512 1W 250V

smd 431

Abstract: 431 smd smd 301 res 0603 RG1608N-750-W-T1 smd 151 RES100
Contextual Info: Part Count Digi-Key Part Number Susumu Part Number 1 RG16N47WCT-ND RG1608N-470-W-T1 2 RG16N51WCT-ND RG1608N-510-W-T1 3 RG16N56WCT-ND RG1608N-560-W-T1 4 RG16N62WCT-ND RG1608N-620-W-T1 5 RG16N68WCT-ND RG1608N-680-W-T1 6 RG16N75WCT-ND RG1608N-750-W-T1 7 RG16N82WCT-ND

MC10119

Contextual Info: MOTOROLA 4-WIDE 4-3-3-3-INPUT "OR-AND" GATE The M C t0 l1 9 is a 4-W ide 4-3-3'3-lnput OR/AND gate with one input from two gates com mon to pin 10. Pq = 100 m W typ/pkg No Load} tpd = 2.3 ns typ L S U F F IX CERAM IC PACKAGE CASE 620 tr, tf - 2.5 ns typ (20% -80%

MC10106

Contextual Info: MOTOROLA TRIPLE 4-3-3-INPUT NOR GATE TRIPLE 4-3-3-INPUT NOR GATE The MC10106 is a triple 4-3-3 input NOR gate. P[> = 30 m W typ/gate No Load tpcj = 2.0 ns typ L SUFFIX CERAMIC PACKAGE CASE 620 tr, tf = 2.0 ns typ (20% -80% ) IU 16 Tp O I I I 11 1 W I 11

Contextual Info: MITSUBISHI LSIs M5M44190AJ,TP,RT-6,-7,-8,-10 FAST PAGE MODE 4 7 1 8 5 9 2 -B IT 2 6 2 1 4 4 -W O R D BY 18-BIT DYNAM IC RAM DESCRIPTION This is a fa m ily o f 2 6 2 1 4 4 -w o rd by 1 8 -b it dynam ic RAMs, fabricated w ith the high perform ance CMOS process, and

92J10R

Abstract: 95J12K 91J470
Contextual Info: Ohmite Resistors Visit OhmiteÕs Website at www.ohmite.com Vitreous Enamel Molded Wirewound Resistors Dimensions Max. Length Ñ A Max. Diameter Ñ B Power Rating In. mm In. mm Leads Ga. Weight g 1 1/2 W 2 1/4 W 3 1/4 W 5W 11 W .437 .390 .562 .953 1.796 11.1

bt1ht

Contextual Info: T H IS COPY IS PROVIDED ON A RESTR IC TED B A S IS AND IS NOT TO BE USED IN ANY WAY DETRIM ENTAL TO THE PART N OT E S s 1„ 2. 3„ 4 o NO. M ATERIAL M S 4 W 5 0 T 15 - L 4 304 M S 4 W 5 0 T 15 - LG 316 M S 6 W 5 0 T 15 - L 4 304 M S 6 W 5 0 T 15 - L B 3 16

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

Contextual Info: M O T O R O L A L SUFFIX 4-BIT FULL ADDER CERAMIC CASE 620 The M C 1 4 0 0 8 B 4 -b it full adder is constructed w ith M O S Pchannel and N-channel enhancem ent mode devices in a single m ono­ lithic structure. This device consists o f four fu ll adders w ith fast

D454A

Abstract: m9107 a887 4K33 DN5565 81G40
Contextual Info: ;8 4/:/978& <707)=>(0?)@(A+)" B'8/4)*CC* !"#$%&'()*+,)-./0121)!334(5)671(8)%8791:/00(81 • N.A&$(;&%"#.5<$3"'&$#&D;&%"#W%&$%"5<&J Z7+$[E$#($\R8$[E ■ X"'&%$-."'$D(5.#(%$"6"%D/6"'&%$A&<%"A&$"6"%D ■ X"'&%$-"3U2V"3&#$D(5.#(%$(W#;W# ■ 0%"5'D.##&%2&5"-6&$.5;W#

TSD06

Contextual Info: MITSUBISHI LSIs M 5 M 4 4 1 9 0 A J ,T P ,R T - 6 ,- 7 ,- 8 ,- 1 0 FAST PAGE MODE 4 7 1 8 5 9 2 -B IT 2 6 2 1 4 4 -W O R D BY 18-BIT DYNAMIC RAM D E S C R IP T IO N This is a fa m ily o f 2 6 2 1 4 4 -w o rd by 1 8 -b it dynam ic RAMs, fabricated w ith the high perform ance CMOS process, and

Contextual Info: HIGHER POWER AFD AMPLIFIERS MODF.I FREQUENCY RANGE GAIN *UJ M B E R •GHzi OB, M in . A F D H W a O 15P 4 -1 2 A F D 2 -W 0 ’ 2 0 -1bP A FD 2 -W 0 "2 0 -2 0 P AFD2-040-.2C- 23F AFD3^W 0" 20-" 5P 4 -1 2 4 -1 ? GAIN FLATNESS |d B M a x .) N O IS E F1GURI

SH1 357

Contextual Info: CMPSH1-4 SURFACE MOUNT HIGH CURRENT SILICON SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH1-4 is a High Current, Schottky Rectifier in a surface mount SOT-23F package suitable for high current applications

Contextual Info: CMHSH5-4 SURFACE MOUNT SILICON SCHOTTKY RECTIFIER 500mA, 40 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH5-4 type is a Silicon Schottky Rectifier, epoxy molded in a surface mount package, designed for high current

Contextual Info: g MOTOROLA SN54LS170 SN74LS170 D E S C R IP T IO N — T he T T L /M S I S N 5 4 L S / 7 4 L S 1 7 0 is a hig h -s p e e d , lo w 'p o w e r 4 x 4 R e gister File org a n iz e d as fo u r w o rd s by fo u r bits. S e p a ra te read and w r ite in p u ts , b o th ad d re ss a n d ena ble, a llo w

Contextual Info: 15 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet miconductor Mechanical Dimensions JEDEC T0-Z20AB .1 4 0 .10 \ T~ "b .too, I- .50 t .39 .42 k. 4. .225 Min k— m- 1 .25 1 .620 F e a tu re s • HIGH CURRENT CAPABILITY W/LOW V , ■ HIGH EFFICIENCY w/LOW POWER LOSS

SH1 357

Contextual Info: CMPSH1-4 SURFACE MOUNT HIGH CURRENT SILICON SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH1-4 is a High Current, Schottky Rectifier in a surface mount SOT-23F package suitable for high current applications

Contextual Info: CMPSH1-4 SURFACE MOUNT HIGH CURRENT SILICON SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH1-4 is a High Current, Schottky Rectifier in a surface mount SOT-23F package suitable for high current applications

31202B

Abstract: 4LS283 54ls283
Contextual Info: M MOTOROLA M ilita ry 5 4L S 283 4 -B it Full A dder W ith F ast C arry MPO ELECTRICALLY TESTED PER: MIL-M-38510/31202 T h e 54L S 2 8 3 is a h igh-speed 4 -B it B inary full a dd e r w ith internal ca rry loo ka he a d . It a cce p ts tw o 4 -b it b inary w ord s (A 1 - A 4 , B 1 - B 4 ) and a

sa wf

Contextual Info: M SM 6207A BftiiAfflic mm. 9 MSM6207fi, CRT ®.JrJZ7K^-Mifi:[5l^'iS-^-iC[5]W L tz ? 'f I > ^ T , •V'f 3 > £ ^ ¿ - 7 - a T ^ • x -f -y -f-l- «fc o i Z M l Z 6 +ftco A t s ■ 4$ % - • • 5 V (4 ~ 6 V L T t ' S (14.31818MHzffl. t?<7>Wfe i)°I 4 x < 7 5 $ K # w & rfl6 .

IC HA 1457 W

Abstract: ha 1457 w BY50B 38T15-CC 38T15-C6
Contextual Info: T H IS COPY IS PROVIDED ON A RESTR IC TED B A S IS AND IS NOT TO BE USED IN ANY WAY DETRIM ENTAL TO THE PART NO. MATERIAL M S 2 W 3 8 T 15 - 0 4 304 MS2W 38T15-C6 3 1B M S 4 W 3 8 T 15 - 0 4 304 MS4W 38T15-CC 316 „89 M S G W 3 8 T 15 - 0 4 304 [22 „6 l]

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K