4.7 K RESISTER ARRAY 9 PIN Search Results

Contextual Info: O r e c o m m e n d e d o p e r a t in g c o n d it io n Parameter Symbol Rating Unit Supply Voltage VCC 1.8~5.5 V Input Voltage VlN 0—Vcc V O DO OPERATING CHARACTERISTICS Unless otherwise specified Ta=-40~85°C,Vcc=1.8~5.5V Parameter Specification Symbol

BR24L64-W

Contextual Info: O product 8k x 8 bit Electrically Erasable PROM O part number BR24L64/F-W O d e s c r ip t io n BR24L64-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable. ^APPLICATIO N General purpose O features •8k registers x 8 bits serial architecture

Contextual Info: O product 8k x 8 bit Electrically Erasable PROM O part number BR24L64/F-W ^DESCRIPTION BR24L64-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable. ^APPLICATION General purpose O features •8k registers x 8 bits serial architecture

wa6r

Abstract: BR24C21 BR24C21F BR24C21FJ BR24C21FV BU9882 BU9882-W SSOP14
Contextual Info: TECHNICAL NOTE Double-cell Memory for Plug & Play EDID Memory BR24C21/F/FJ/FV, BU9882/F/FV-W BR24C21/F/FJ/FV ●Description TM TM The BR24C21 series ICs are serial EEPROMs that support DDC1 /DDC2 interfaces for Plug and Play displays. ●Features TM TM 1 Compatible with both DDC1 /DDC2

Contextual Info: BR34L02FV-W Memory ICs 256x8 bit Electrically Erasable PROM based on Serial Presence Detect BR34L02FV-W The BR34L02FV-W is a 2k bit EEPROM memory with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is

256X8

Abstract: BR34L02FV-W
Contextual Info: OPRODUCT 2 5 6 x 8 bit Electrically Erasable PROM based on Serial Presence Detect O p a r t n u m b er BR34L02FV-W O d e s c r ip t io n The BR34L02FV-W is a 2k bit EEPROM memory with w rite-protect function having independent rewrite inhibit area, developed fo r a DIMM

BR24C02F-W

Abstract: BR24C04FJ-W BR24C04F-W BR24C04-W BR24C01AFJ-W BR24C01AFV-W BR24C01AF-W BR24C01A-W BR24C02FJ-W BR24C02FV-W
Contextual Info: BR24C01A-W / BR24C01AF-W / BR24C01AFJ-W / BR24C01AFV-W / BR24C021-W / BR24C02F-W / Memory ICs BR24C02FJ-W / BR24C02FV-W / BR24C04-W / BR24C04F-W / BR24C04FJ-W / BR24C04FV-W I2C BUS compatible serial EEPROM BR24C01A-W / BR24C01AF-W / BR24C01AF-W / BR24C01AFV-W / BR24C02-W / BR24C02F-W /

BR24L32-W

Contextual Info: OPRODUCT 4k X 8 bit Electrically Erasable PROM O part BR24L32/F/FV-W number ^DESCRIPTION BR24L32-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable. O a p p u c a t io n s General purpose O features Parameter Symbol Rating

Contextual Info: Memory for Plug & Play EDID Memory For display BR24C21,BR24C21F,BR24C21FJ,BR24C21FV, BU9882-W,BU9882F-W,BU9882FV-W No.11002ECT02 BR24C21,BR24C21F,BR24C21FJ,BR24C21FV ●Description TM TM BR24C21F,BR24C21FJ,BR24C21FV are serial EEPROMs that support DDC1 /DDC2 interfaces

BR24C21

Abstract: BR24C21F BR24C21FJ BR24C21FV BU9882FV-W BU9882F-W BU9882-W
Contextual Info: Memory for Plug & Play EDID Memory For display BR24C21,BR24C21F,BR24C21FJ,BR24C21FV, BU9882-W,BU9882F-W,BU9882FV-W No.09002EAT02 BR24C21,BR24C21F,BR24C21FJ,BR24C21FV ●Description TM TM BR24C21F,BR24C21FJ,BR24C21FV are serial EEPROMs that support DDC1 /DDC2 interfaces

Contextual Info: BR24L64-W / BR24L64F-W / BR24L64FJ-W Memory ICs 8kx8 bit electrically erasable PROM BR24L64-W / BR24L64F-W / BR24L64FJ-W 2 The BR24L64-W series is 2-wire I C BUS type serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips.

BR34L02FV-W

Contextual Info: BR34L02FV-W Memory ICs 256x8 bit Electrically Erasable PROM based on Serial Presence Detect BR34L02FV-W The BR34L02FV-W is a 2k bit EEPROM memory with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is

Contextual Info: BR34L02FV-W Memory ICs 256x8 bit Electrically Erasable PROM based on Serial Presence Detect BR34L02FV-W The BR34L02FV-W is a 2k bit EEPROM memory with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is

ROM "memory cell" bit lines

Abstract: master slave object counter circuit USE OF SCL SDA LINE 7.24 power one nmos pmos array PHILIPS TL visual i2c BR34L02FV-W
Contextual Info: BR34L02FV-W Memory ICs 256x8 bit Electrically Erasable PROM based on Serial Presence Detect BR34L02FV-W The BR34L02FV-W is a 2k bit EEPROM memory with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is

BE24L64FJ-W

Abstract: BR24L04 BR24L08 BR24L16 BR24L64FJ-W BR24L64F-W BR24L64-W
Contextual Info: BR24L64-W / BR24L64F-W / BE24L64FJ-W Memory ICs 8kx8 bit electrically erasable PROM BR24L64-W / BR24L64F-W / BR24L64FJ-W The BR24L64-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips.

BR24L64-W

Abstract: BR24L04 BR24L08 BR24L16 BR24L64F-W
Contextual Info: BR24L64-W / BR24L64F-W Memory ICs 8kx8 bit electrically erasable PROM BR24L64-W / BR24L64F-W 2 The BR24L64-W series is 2-wire I C BUS type serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips. !Applications

Contextual Info: O r e c o m m e n d e d o p e r a t i n g c o n d it io n Parameter Symbol Rating Unit Supply Voltage V cc 1.8—5.5 V Input Voltage V in 0—V cc V O D C OPERATING CH A R A C TER ISTIC S Unless otherwise specified Ta=-40~85°C. Vcc=1.8~5.5V Parameter Specification

256X8

Abstract: BR34L02FV-W
Contextual Info: OPRODUCT 256 x 8 bit Electrically Erasable PROM based on Serial Presence Detect O part BR34L02FV-W n u m b er O d e s c r ip t io n The BR34L02FV-W is a 2k bit EEPROM memory with write-protect function having independent rewrite inhibit area, developed for a DIMM

A1A2G

Abstract: 128X8 BR24L01A-W
Contextual Info: O product 12 8x 8 bit Electrically Erasable PROM O part BR24L01A/F/FJ/FV/FVM -W number O d e s c r ip t io n BR24L01A-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable. O a p p l ic a t io n General purpose O features O a b s o l u t e m a x im u m

BR24L32-W

Abstract: CLOCKx14
Contextual Info: O PRO DU C T 4k x 8 bit Electrically Erasable PROM O b r 2 4 L 3 2 /f / f v - w part num ber ^D ESC R IPTIO N BR24L32-W series is 2-w ire I2C BUS type serial EEPROMs which are electrically programmable. O A P P U C A T I0 N S General purpose ^F E A T U R E S

Contextual Info: O O recomm ended do o p e r a t in g c o n d it io n Parameter Symbol Rating Unit Supply Voltage Vcc 1.8~5.5 V Input Voltage ViN 0 —Vcc V OPERATING CHARACTERISTICS Unless otherwise specified T a = -4 0 ~ 8 5 ° a V cc=1.8~5.5V Specification Parameter Symbol

Contextual Info: O O r e c o m m e n d e d o p e r a t in g c o n d it io n do Parameter Symbol Rating Unit Supply Voltage VCC 1.8~5.5 V Input Voltage VlN 0~VCC V OPERATING CHARACTERISTICS Unless otherwise specified Ta= -40~ 85°a Vcc=1.8 ~ 5.5V Parameter Specification Symbol

BR24L32-W

Abstract: BR24L04 BR24L08 BR24L16 BR24L32FJ-W BR24L32FV-W BR24L32F-W STA503
Contextual Info: BR24L32-W / BR24L32F-W / BR24L32FJ-W / BR24L32FV-W Memory ICs 4kx8 bit electrically erasable PROM BR24L32-W / BR24L32F-W / BR24L32FJ-W BR24L32FV-W The BR24L32-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips.

Contextual Info: BR24L16-W / BR24L16F-W / BR24L16FJ-W / BR24L16FV-W / BR24L16FVM-W Memory ICs 2kx8 bit electrically erasable PROM BR24L16-W / BR24L16F-W / BR24L16FJ-W BR24L16FV-W / BR24L16FVM-W The BR24L16-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable.