40 HM 60 Search Results

RB100A

Abstract: RB110
Contextual Info: Schottky barrier diodes Schottky barrier diodes summary Peak reverse voltage V HM V Reverse voltage RB160L-40 RB110C Part num ber Peak forward surge current 1 cycle @ 60 Hz V r (V) Mean rectifying current lo (A) 40 40 1.0 40 25 1.0 Forward voltage Package

NTC Thermistor 3d 214

Abstract: NTC 122K 270k ntc Thermistor 682 AT NTC 22K 0805 9707K NTC thermistor 2.2k ohm NTC thermistor 12k ohm 226 20K 752 751k
Contextual Info: Surface Mount NTC Thermistors NTHC Series FEATURES CHARACTERISTICS S erie s NTHC04 NTHC06 E IA S ize 0 40 2 0 60 3 0 80 5 R e sista n ce R a ng e + 2 5 o C * 1 00 0 O h m ~ 2 M e gO h m 3 0 O hm ~ 1 50 KO hm 4 0 O hm ~ 2 M eg O h m R e sista n ce To le ran ce (+ 2 5 o C )*

Contextual Info: Surface Mount NTC Thermistors NTHC Series FEATURES CHARACTERISTICS S erie s NTHC04 NTHC06 E IA S ize 0 40 2 0 60 3 0 80 5 R e sista n ce R a ng e + 2 5 o C * 1 00 0 O h m ~ 2 M e gO h m 3 0 O hm ~ 1 50 KO hm 4 0 O hm ~ 2 M eg O h m R e sista n ce To le ran ce (+ 2 5 o C )*

GSH10305040040

Contextual Info: Tel. +41 24 445 66 88 Fax +41 24 445 66 89 capinfo@Lcap.ch www.Lcap.ch LeclanchÄ Capacitors 48, av. de Grandson 1400 Yverdon, Switzerland Drawing No. : 100011044 created from : hm 21/03/2013 14:05:00 Part Number : GSH10305040040 D -0 +1 €D : 40 mm L : 40 mm

220-10 diode

Abstract: DIODE B2
Contextual Info: Rectifier diode bridges Type V rrm V hm s I fsm If a v m t « 10 ms ^v| max Last, Load Charge: R /C A A °c t»j= V V ^vj max Outline 100 190 300 600 900 40 80 125 250 380 50 0,9/0,8 125 Si : 102 D : 103 SD: 104 Si Si Si Si Si 100 190 300 600 900 40 80 125

HM3-65261

Abstract: 65261 HM16S HM1-6S261 5540a
Contextual Info: lllNlll /l/IATRA-HARRIS SEMICONDUCTOR HM 65261 16K x 1 CMOS STATIC RAM EBJH JULY 1985 Pinout Features • • • • • • • • • • • HIGH SPEED, FAST ACCESS TIME : 60/70/85/100 ns ASYNCHRONOUS STAND BY CURRENT : 50 jiA max OPERATING SUPPLY CURRENT : 40 mA max

L-934MWC

Abstract: L-934PWC
Contextual Info: www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 Eenbie CBeTOflMOflbi □ 3 MM flnawieTp : 3 mm npon3BC>AHTenb : Kingbright Curia CBeTa yKa3aHa npH 20 mA. Kofl: L-934MWC L-934PWC X [hm] - Curia CBeTa [mKa] 50-180 200-600 yron o63opa n 40 35 T u n nHH3bl

HM3-65261

Contextual Info: MHS HIM AW RA-HARRIS HM 65261 SEMICONDUCTOR 16K x 1 CMOS STATIC RAM ILIMDI Pinout Features • • • • • • • • • • • HIGH SPEED, FAST ACCESS TIME : 60/70/85/100 ns ASYNCHRONOUS STAND BY CURRENT : SO j<A max OPERATING SUPPLY CURRENT : 40 mA max

HM65664A

Abstract: SOJ28
Contextual Info: Temic Semiconductors Part Number Format Temperature Range °G H M 65664A -9 8Kx8 -40 to +85 4.5 to 5.5 35 to 55 5/100 2 to 30 75 to 100 HM 65664A -A 8Kx8 -40 t o +125 4.5 to 5.5 35 to 55 50/500 20 to 200 75 to 100 H M 65664A -2 CL65664 8Kx8 8Kx8 -55 to +125

Contextual Info: Attenuators HN Type DC- 8 GHz Performance Frequency: DC - 8.0 GHz and DC - 2.0 units available Attenuation Values: 1 - 60 dB in 1 dB increments Attenuation Accuracy: 1 - 6 dB + 0.3 dB 7 - 2 0 dB 21 - 40 d B 41 - 60 d B + 0.5 dB + 075 dB + 1.0 dB Impedance: 50 O hm s

L-53MBDL

Abstract: MKFL L-53MBC L-53PBC L-53MBTL
Contextual Info: www.i-t.su info@i-t.su Ten: 095 785-48-05, 739-09-95 l"ony6b ie CBeTOflMOflbi 0 5 mm flwaMeTp : 5 mm np0M3B0flMTenb : Kingbright Cwna CBeTa yKa3aHa npw 20 m A. Ko a : k [hm ] L-53MBC L-53MBDL L-53MBTL L-53PBC 455 455 455 465 Cwna CBeTa [m Ka ] 50-150 40-60

Contextual Info: LARGE ALUMINUM ELECTROLYTIC CAPACITORS HC Sn ap-in Term inal T yp e, S m a ller-size d S e rie s Smaller case sizes than HM series Voltage range of 6.3~450V & & Miniaturized Solvent Proof W VS200V Item Operating temperature range WV i 350 : -40 ~ +85°C. WV

AG47004010020

Contextual Info: Tel. +41 24 445 66 88 Fax +41 24 445 66 89 capinfo@Lcap.ch www.Lcap.ch LeclanchÄ Capacitors 48, av. de Grandson 1400 Yverdon, Switzerland Drawing No. : 11207 created from : hm 10/06/2013 14:13:00 Part Number : AG47004010020 l Å5 Äd 10 mm L : 20 mm l : 40 mm

256Mbyte DDR SDRAM with 64bit data bus

Abstract: PC133 133Mhz cl3 ELPIDA ECT-TS-0198 hitachi part numbering DDR266B DDR200 DDR266A hitachi part "numbering" RDRAM
Contextual Info: Hitachi & NEC DRAM Part Numbering System Elpida Memory, Inc. 2000, 2001 ECT-TS-0198 December 13, 2001 1. Hitachi DRAM Component Parts Numbering System e.g. 256Mbit SDRAM HM 52 25 40 5 B L TT 1) (2) (3) (4) (5) (6)(7) (8) (1)Hitachi IC Memory A6 (9) (2)Product Family

Dense-Pac Microsystems dpz1MM

Abstract: DPZ1M
Contextual Info: DENSE-PAC 8 Megabit FLASH EEPROM VI I C K O S Y ST HM $ D PZ1M M 8N G D E SC R IP T IO N : The DPZ1MM8NG is a 1 Meg x 8 CMOS FLASH Electrically Erasable and Programmable nonvolatile memory devices. The DPZ1MM8NC is a 40 Pin ceramic Leadless Chip Carrier LCC , hermetically

Contextual Info: Attenuators 7mm Precision Types DC -1 8 GHz Precision Performance Frequency: DC -18.0 GHz A tten u atio n V alues: i- 4 0 d B a s noted A tten u atio n A ccuracy: i - 6 d B ± 0 .3 d B 7 - 20 dB 21 - 40 dB 41 - 60 dB ± 0 .5 d B + 0.7 dB + 1.5 dB Im pedance: 50 O hm s

d191

Abstract: X2D11
Contextual Info: 40 E RO HM CO LTD . VTRÆJ IC /IC s for VTR Applications 7 ô 5 ô cl cn » S SRHÏ1 BU2770S — BU27703 ÜQQM6 ? ^ — "7 = 7 7 -2 j VTR Digital Servo • BU2770S (Í, VTFKD-tf-tf v X f A S 1 í 'f J F í ^ ü í S l / ’D im ension s (U n it : m m ) T'ÍSfiST'

XF160

Contextual Info: 2 . Sch em atic: 1. M echanical D im ensions: I o o CN E lectrical Sp ecification s: 1.40 TOP VIEW OCL: 10 u H ± 20 % @ 100KHz 0.1V BOTTOM VIEW DCR: 0 .3 0 O hm s Max Isat: 1.78 1Adc B ased on 10% Typ d ro p in OCL Irm s: 0 .9 0 A (B ased on 40"C Typ Tem p Rise)

Radial Leaded

Abstract: 504K
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 10/29/10 9:40 AM Page 149 er w Po NG TI RA z T MH EN N. RR MI CU DC) (A M NT MU NA z) XI SO H MA RE . (M LF MIN SE CY N UE EQ CE FR AN ) ST S SI HM RE M (O DC MU XI MA CE AN z) CT kH DU 0 IN 1.0 @ H (µ SH NU

501LT

Abstract: SG400W22 SG500FXF21 SG400EX22 SG400R22 SG400U22 3-60E3A
Contextual Info: - 77 - * S G 4 0 0 R, U, W, 3 + 3 V-, b£ <W < - •§" I rrm I drm ¡CRM ■ e * a $ ¿ti »j SG400R22 SG400U22 SG400W22 1300 | 1600 I tqrm 400 W d = V ¿ Vdrm, h RMS 150 i T /= 7 0 °C ) I tsm SG 40 0 EX2 2 I gfm P cravi /CR(RMS) P g HM Vg r m it V dm

MS214

Abstract: MS21422 2020R
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 8/24/10 3:40 PM Page 56 R F NG TI RA A T m EN UM RR IM CE CU AX AN ) M ST S SI HM RE (O M DC U M ) XI Hz (M MA M MU NI ) MI F Hz SR (M Y NC M UE EQ MU NI FR MI ST Q E TE NC RA LE TO H) (µ CE AN CT # DU IN SH

222M

Contextual Info: 2. Sch em atic: 1. M echanical D im ensions: c 0.100 0 .0 4 3 Max 1.10 2 .5 0 3. E lectrical Specification : in oo C\l CD d<° OCL: 2 .2 0 u H ± 2 0 % 1 0 0 K H z 0.1V DCR: 0 .1 4 0 O hm s Max SRF: 115 MHz Typ Irm s: 2 .4 0 A based on 40% Tem p Rise

00565

Contextual Info: PART NUMBER: 123DFC3R5Z IP R A D IA L L E A D S U P E R C A P A C IT O R S Parts are RoHS compliant ELECTRICAL SPECIFICATIONS C ap acitan c e: 0.012 F T o le ra n c e : -20 % . +80 % T e m p e ra tu re range: -40°C to +70°C W VD C : 3.5 V o lts DC E SR AC :600 m illiO hm s at 120 Hz and 20°C

0841A

Abstract: LT10K marking code 82J
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 8/24/10 11:33 AM Page 40 R F NG TI RA A T m EN UM RR IM CE CU AX AN ) M ST S SI HM RE (O M DC U M ) XI Hz (M MA M MU NI ) MI F Hz SR (M Y NC M UE EQ MU NI FR MI ST Q E TE NC RA LE TO H) (µ CE AN CT # DU IN L I TA R Y