2w,GaAs FET
Abstract: 6401FN
Text: MA06401FN 2W GaAs Power Amplifier 4.5 - 6.9 GHz Advanced Information FEATURES •= •= •= •= •= •= •= •= Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical
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MA06401FN
6401FN
MA06401FN
2w,GaAs FET
6401FN
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ITT6401FM
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM FEATURES • • • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 Ω Input/Output Impedance
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ITT6401FM
6401FM
ITT6401FM
360mA
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2w,GaAs FET
Abstract: ITT6401D
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
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ITT6401D
ITT6401D
360mA
2w,GaAs FET
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LR401
Abstract: TB-160 FLR401 tb160
Text: TB-160 LR401 Pin vs Pout Freq=30MHz Vds=28Vdc Idq=800ma 80 16.0 15.0 60 Pout P1dB=60W 14.0 40 13.0 Gain 20 Efficiency @60W= 50% 12.0 11.0 1 2 3 4 5 6 Pin in Watts TB-160 LR401 Pin vs Pout Freq=250MHz Vds=28Vdc Idq=800ma 100 15.0 P1dB=60W 14.5 80 14.0 60 13.5
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TB-160
LR401
30MHz
28Vdc
800ma
250MHz
FLR401
tb160
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Untitled
Abstract: No abstract text available
Text: MAAP-010518 2W Power Amplifier 17.7 - 19.7 GHz Rev. V1 Functional Schematic Features • 21 dB Small Signal Gain 40 dBm Third Order Intercept Point OIP3 >2 W Output P1dB Integrated Power Detector Typical bias 1200 mA at 6 V
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MAAP-010518
24-lead
MAAP-010518
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high power FET transistor s-parameters
Abstract: FP1189 FP1189-PCB-1900 FP1189-PCB-900
Text: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • DC – 4000 MHz • +28 dBm P1dB • +40 dBm Output IP3 • High Drain Efficiency • 17 dB Gain @ 1900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description
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FP1189
OT-89
FP1189
1-800-WJ1-4401
high power FET transistor s-parameters
FP1189-PCB-1900
FP1189-PCB-900
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TB188
Abstract: TB-188 850mu 20AWG 47UF F2001 SQ701
Text: TB188 Pout/Gain vs Pin Freq=1.5Mhz;Vds=24Vdc Idq=1.75A 40 40.0 38.0 36.0 32 P1dB =20W 34.0 Pout 32.0 24 30.0 28.0 16 26.0 Efficiency @20W = 45% 24.0 Gain 8 22.0 20.0 18.0 0.1 0.2 0.3 Pin in Watts 0.4 0.5 TB188 F2001->SQ701 Gain/Efficiency vs Freq; Vds=24Vdc Idq=1.75A
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TB188
24Vdc
F2001--
SQ701
24Vdc
TB-188
850mu
20AWG
47UF
F2001
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sot89 stencil
Abstract: TriQuint SOT-89 TAPE AND REEL TriQuint SOT-89 TAPE AND REEL INFORMATION mmic SOT-89 07 4 SOT-89 2-56 socket head cap screw TGF2960-SD
Text: TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features • Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: • TOI: 40 dBm • 28 dBm Psat, 27 dBm P1dB • Gain: 19 dB • Input Return Loss: -10 dB • Output Return Loss: -5 dB • Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V
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TGF2960-SD
TGF2960-SD
TGF2960-SD,
OT-89,
sot89 stencil
TriQuint SOT-89 TAPE AND REEL
TriQuint SOT-89 TAPE AND REEL INFORMATION
mmic SOT-89 07
4 SOT-89
2-56 socket head cap screw
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TGF2960-SD
Abstract: No abstract text available
Text: TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features • Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: • TOI: 40 dBm • 28 dBm Psat, 27 dBm P1dB • Gain: 19 dB • Input Return Loss: -10 dB • Output Return Loss: -5 dB • Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V
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TGF2960-SD
TGF2960-SD
TGF2960-SD,
OT-89,
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TGF2960-SD
Abstract: sot89 stencil
Text: TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features • Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: • TOI: 40 dBm • 28 dBm Psat, 27 dBm P1dB • Gain: 19 dB • Input Return Loss: -10 dB • Output Return Loss: -5 dB • Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V
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TGF2960-SD
TGF2960-SD
TGF2960-SD,
OT-89,
sot89 stencil
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Untitled
Abstract: No abstract text available
Text: TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features • Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: • TOI: 40 dBm • 28 dBm Psat, 27 dBm P1dB • Gain: 19 dB • Input Return Loss: -10 dB • Output Return Loss: -5 dB • Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V
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TGF2960-SD
TGF2960-SD
TGF2960-SD,
OT-89,
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Untitled
Abstract: No abstract text available
Text: 2 Watt P1dB, 1 GHz to 2 GHz, Medium Power Amplifier, 35 dB Gain, 45 dBm IP3, 1.5 dB NF, SMA TECHNICAL DATA SHEET PE15A4025 PE15A4025 is a L-band coaxial 2W high dynamic range power amplifier, operating in the 1 to 2 GHz frequency range and designed for low noise and high linearity applications. The amplifier offers 33 dBm of P1dB and high 35 dB small signal gain,
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PE15A4025
PE15A4025
ier-35-db-gain-45-dbm-ip3-sma-pe15a4025-p
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Untitled
Abstract: No abstract text available
Text: SPA-020-27-02-SMA DATA SHEET Medium Power Amplifier at 2 Watt P1dB Operating From 1 GHz to 2 GHz with 35 dB Gain, 45 dBm IP3 and SMA The SPA-020-27-02-SMA is a L-band coaxial 2W high dynamic range power amplifier, operating in the 1 to 2 GHz frequency range and designed for low noise
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SPA-020-27-02-SMA
SPA-020-27-02-SMA
o0-27-02-sma-p
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Untitled
Abstract: No abstract text available
Text: AH323 2W High Linearity 5V 2-Stage Amplifier Applications Base stations / Repeaters High Power Amplifiers 2G / 3G / 4G Wireless Infrastructure Femtocells LTE / WCDMA / CDMA 20 Pin 5x5 mm QFN Package VBIAS2 GND / NC GND / NC IREF1 General Description RF IN
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AH323
AH323
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AH322G
Abstract: AH322 AH322-S8G AH322-S8PCB1960 AH322-S8PCB2140 AH322-S8PCB900 V1400 L-382
Text: AH322 2W High Linearity InGaP HBT Amplifier Applications • • Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram
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AH322
AH322
AH322G
AH322-S8G
AH322-S8PCB1960
AH322-S8PCB2140
AH322-S8PCB900
V1400
L-382
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WR-75
Abstract: No abstract text available
Text: MUC140145-02 Ku-Band Block Upconverter 950-1450 MHz to 14.0-14.5 GHz 2W Output Power TERRASAT INC.’s MUC140145-02 is a SATCOM upconverter that block converts L-Band 950-1450 MHz to 14.0-14.5 GHz standard Ku-Band uplink frequency with 2W output power at P1dB in a single weatherproof housing suitable for antenna feedhorn mounting. This
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MUC140145-02
MUC140145-02
WR-75
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SATCOM
Abstract: Feedhorn WR-75
Text: MUC137142-02 Extended Ku-Band Block Upconverter 950-1450 MHz to 13.75-14.25 GHz 2W Output Power TERRASAT INC.’s MUC137142-02 is a SATCOM upconverter that block converts L-Band 950-1450 MHz to 13.75-14.25 GHz extended Ku-Band uplink frequency with 2W output
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MUC137142-02
MUC137142-02
WR-75
SATCOM
Feedhorn
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Untitled
Abstract: No abstract text available
Text: SPA-060-30-02-SMA DATA SHEET 2 GHz to 6 GHz, Medium Power Broadband Amplifier with 2 Watt, 32 dB Gain and SMA SPA-060-30-02-SMA is a 2W coaxial wideband power amplifier operating in the 2 to 6 GHz frequency range. The amplifier offers 33 dBm min of P1db and 30
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SPA-060-30-02-SMA
SPA-060-30-02-SMA
r-broadband-amplifier-spa-060-30-02-sma-p
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Untitled
Abstract: No abstract text available
Text: SBBA-120-47-02-SMA DATA SHEET 6 GHz to 12 GHz, 47 dB Gain Broadband High Gain Amplifier with 2 Watt and SMA SBBA-120-47-02-SMA is a 2W wideband coaxial power amplifier operating in the 6 to 12 GHz frequency range. The amplifier offers 33 dBm min of P1db and high
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SBBA-120-47-02-SMA
SBBA-120-47-02-SMA
-high-gain-amplifier-sbba-120-47-02-sma-p
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FMM5056
Abstract: No abstract text available
Text: New Products FMM5056VF/FMM5057VF C-Band Power Amplifier MMIC 2W FMM5056VF/FMM5057VF Power amplifier MMIC that can be used as either a power amplifier or a driver amplifier for communication network system devices using the C band, such as VSAT and digital multiplex radio devices.
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FMM5056VF/FMM5057VF
FMM5056VF)
FMM5057VF)
FMM5056
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Untitled
Abstract: No abstract text available
Text: SBBA-060-44-02-SMA DATA SHEET 2 GHz to 6 GHz, 44 dB Gain Broadband High Gain Amplifier with 2 Watt and SMA SBBA-060-44-02-SMA is a 2W wideband coaxial power amplifier operating in the 2 to 6 GHz frequency range. The amplifier offers 33 dBm min of P1db and high
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SBBA-060-44-02-SMA
SBBA-060-44-02-SMA
-high-gain-amplifier-sbba-060-44-02-sma-p
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DNP 0805
Abstract: 25EVM AH322G
Text: AH322 2W High Linearity InGaP HBT Amplifier Applications • • Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram
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AH322
AH322
DNP 0805
25EVM
AH322G
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Untitled
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT6401FM
ITT6401FM
360mA
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GaAsTEK
Abstract: No abstract text available
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
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ITT6401D
ITT6401D
loQ-360mA
GaAsTEK
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