40 P1DB 2W Search Results

2w,GaAs FET

Abstract: 6401FN
Contextual Info: MA06401FN 2W GaAs Power Amplifier 4.5 - 6.9 GHz Advanced Information FEATURES •= •= •= •= •= •= •= •= Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical

Contextual Info: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process

ITT6401FM

Contextual Info: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM FEATURES • • • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 Ω Input/Output Impedance

2w,GaAs FET

Abstract: ITT6401D
Contextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply

GaAsTEK

Contextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply

LR401

Abstract: TB-160 FLR401 tb160
Contextual Info: TB-160 LR401 Pin vs Pout Freq=30MHz Vds=28Vdc Idq=800ma 80 16.0 15.0 60 Pout P1dB=60W 14.0 40 13.0 Gain 20 Efficiency @60W= 50% 12.0 11.0 1 2 3 4 5 6 Pin in Watts TB-160 LR401 Pin vs Pout Freq=250MHz Vds=28Vdc Idq=800ma 100 15.0 P1dB=60W 14.5 80 14.0 60 13.5

Contextual Info: MAAP-010518 2W Power Amplifier 17.7 - 19.7 GHz Rev. V1 Functional Schematic Features •       21 dB Small Signal Gain 40 dBm Third Order Intercept Point OIP3 >2 W Output P1dB Integrated Power Detector Typical bias 1200 mA at 6 V

high power FET transistor s-parameters

Abstract: FP1189 FP1189-PCB-1900 FP1189-PCB-900
Contextual Info: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • DC – 4000 MHz • +28 dBm P1dB • +40 dBm Output IP3 • High Drain Efficiency • 17 dB Gain @ 1900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description

TB188

Abstract: TB-188 850mu 20AWG 47UF F2001 SQ701
Contextual Info: TB188 Pout/Gain vs Pin Freq=1.5Mhz;Vds=24Vdc Idq=1.75A 40 40.0 38.0 36.0 32 P1dB =20W 34.0 Pout 32.0 24 30.0 28.0 16 26.0 Efficiency @20W = 45% 24.0 Gain 8 22.0 20.0 18.0 0.1 0.2 0.3 Pin in Watts 0.4 0.5 TB188 F2001->SQ701 Gain/Efficiency vs Freq; Vds=24Vdc Idq=1.75A

sot89 stencil

Abstract: TriQuint SOT-89 TAPE AND REEL TriQuint SOT-89 TAPE AND REEL INFORMATION mmic SOT-89 07 4 SOT-89 2-56 socket head cap screw TGF2960-SD
Contextual Info: TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features • Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: • TOI: 40 dBm • 28 dBm Psat, 27 dBm P1dB • Gain: 19 dB • Input Return Loss: -10 dB • Output Return Loss: -5 dB • Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V

TGF2960-SD

Contextual Info: TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features • Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: • TOI: 40 dBm • 28 dBm Psat, 27 dBm P1dB • Gain: 19 dB • Input Return Loss: -10 dB • Output Return Loss: -5 dB • Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V

TGF2960-SD

Abstract: sot89 stencil
Contextual Info: TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features • Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: • TOI: 40 dBm • 28 dBm Psat, 27 dBm P1dB • Gain: 19 dB • Input Return Loss: -10 dB • Output Return Loss: -5 dB • Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V

Contextual Info: TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key Features • Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: • TOI: 40 dBm • 28 dBm Psat, 27 dBm P1dB • Gain: 19 dB • Input Return Loss: -10 dB • Output Return Loss: -5 dB • Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V

Contextual Info: 2 Watt P1dB, 1 GHz to 2 GHz, Medium Power Amplifier, 35 dB Gain, 45 dBm IP3, 1.5 dB NF, SMA TECHNICAL DATA SHEET PE15A4025 PE15A4025 is a L-band coaxial 2W high dynamic range power amplifier, operating in the 1 to 2 GHz frequency range and designed for low noise and high linearity applications. The amplifier offers 33 dBm of P1dB and high 35 dB small signal gain,

Contextual Info: AH323 2W High Linearity 5V 2-Stage Amplifier Applications Base stations / Repeaters High Power Amplifiers 2G / 3G / 4G Wireless Infrastructure Femtocells LTE / WCDMA / CDMA 20 Pin 5x5 mm QFN Package VBIAS2 GND / NC GND / NC IREF1 General Description RF IN

N40001

Contextual Info: AH323 2W High Linearity 5V 2-Stage Amplifier Applications Base stations / Repeaters High Power Amplifiers 2G / 3G / 4G Wireless Infrastructure Femtocells LTE / WCDMA / CDMA 20 Pin 5x5 mm QFN Package VBIAS2 GND / NC GND / NC IREF1 General Description RF IN

AH322G

Abstract: AH322 AH322-S8G AH322-S8PCB1960 AH322-S8PCB2140 AH322-S8PCB900 V1400 L-382
Contextual Info: AH322 2W High Linearity InGaP HBT Amplifier Applications • •    Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features         Functional Block Diagram

WR-75

Contextual Info: MUC140145-02 Ku-Band Block Upconverter 950-1450 MHz to 14.0-14.5 GHz 2W Output Power TERRASAT INC.’s MUC140145-02 is a SATCOM upconverter that block converts L-Band 950-1450 MHz to 14.0-14.5 GHz standard Ku-Band uplink frequency with 2W output power at P1dB in a single weatherproof housing suitable for antenna feedhorn mounting. This

SATCOM

Abstract: Feedhorn WR-75
Contextual Info: MUC137142-02 Extended Ku-Band Block Upconverter 950-1450 MHz to 13.75-14.25 GHz 2W Output Power TERRASAT INC.’s MUC137142-02 is a SATCOM upconverter that block converts L-Band 950-1450 MHz to 13.75-14.25 GHz extended Ku-Band uplink frequency with 2W output

Contextual Info: SPA-060-30-02-SMA DATA SHEET 2 GHz to 6 GHz, Medium Power Broadband Amplifier with 2 Watt, 32 dB Gain and SMA SPA-060-30-02-SMA is a 2W coaxial wideband power amplifier operating in the 2 to 6 GHz frequency range. The amplifier offers 33 dBm min of P1db and 30

Contextual Info: SBBA-120-47-02-SMA DATA SHEET 6 GHz to 12 GHz, 47 dB Gain Broadband High Gain Amplifier with 2 Watt and SMA SBBA-120-47-02-SMA is a 2W wideband coaxial power amplifier operating in the 6 to 12 GHz frequency range. The amplifier offers 33 dBm min of P1db and high

FMM5056

Contextual Info: New Products FMM5056VF/FMM5057VF C-Band Power Amplifier MMIC 2W FMM5056VF/FMM5057VF Power amplifier MMIC that can be used as either a power amplifier or a driver amplifier for communication network system devices using the C band, such as VSAT and digital multiplex radio devices.

Contextual Info: SBBA-060-44-02-SMA DATA SHEET 2 GHz to 6 GHz, 44 dB Gain Broadband High Gain Amplifier with 2 Watt and SMA SBBA-060-44-02-SMA is a 2W wideband coaxial power amplifier operating in the 2 to 6 GHz frequency range. The amplifier offers 33 dBm min of P1db and high

DNP 0805

Abstract: 25EVM AH322G
Contextual Info: AH322 2W High Linearity InGaP HBT Amplifier Applications • •    Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features         Functional Block Diagram