400 1200V SCR Search Results

SCR 200A 500V

Abstract: 50A 1200V SCR CYNA25
Contextual Info: POWER COMPONENTS • Motor Control > Suitable for General Purpose AC Switching > IGT 25 mA Max. • Overvoltage Crowbar Protection > VDRM/VRMM 400, 600, 800, 1200V Applications • Voltage Regulation CYNA/CYNB16 • Welding Equipment 16Amp - 400/600/800/1200V - SCR

DI 762

Abstract: 4500a NTE5381 1200v scr 300A 1200V SCR induction heating induction heating circuits low voltage scr SCR 100A 1200V SCR Gate Drive
Contextual Info: NTE5381 Silicon Controlled Rectifier SCR for High Speed Switching, 1200V, 400 Amp, TO200AB Features: D High di/dt with Soft Gate Control D High Frequency Operation D Low Dynamic Forward Voltage Drop D Low Switching Losses at High Frequency Applications:

50A 1200V SCR

Abstract: CYNA25
Contextual Info: POWER COMPONENTS > Suitable for General Purpose AC Switching > IGT 40mA Max. Applications • Motor Control • Overvoltage Crowbar Protection • Capacitive Discharge Ignition > Isolated and Non-Isolated Tab > VDRM/VRMM 400, 600, 800, 1200V • Voltage Regulation

Contextual Info: 70-W224NIA400SH-M400P datasheet flow NPC 4w 2400 V / 400 A Features flow SCREW 4w housing ● 2400V NPC-topology 2x 1200V ● High power screw interface ● Low inductive interface for external DC-capacitors and paralleling on component level ● Snubber diode for optional asymmetrical inductance

TOSHIBA THYRISTOR

Abstract: thyristor 80A, 1200V
Contextual Info: 9 0 9 7 2 5 0 TOSHIBA D IS C R E T E /O P T O 39C 02324 Bl-DIRECTIONAL TRIODE THYRISTOR (TRIAC) TOSHIBA { DI SCRET E/ OP TO } 3T 1200V 80A SM80Q13 DE^iO^SO □□□23S4 □ ( 3) : ' Í.6MAX. MAXIMUM RATINGS SNM BOL C H A RA C TERISTIC RATING 400 Repetitive Peak SM80G13

JFET semisouth

Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

ASJE1200R063

Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

2N19K

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Amp RMS SCRa Major Raring* and Characteristic] 'TIHM!) 'TIAVI »TC 7O- 70* 70- SB1 82' 85- ITSU «50Hi 9GE 1,000' 965 1,000- 905 1,000* |2t

ASJE1200R100

Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

JFET semisouth

Abstract: SEMISOUTH SiC JFET
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

C400A

Abstract: FD400R12KF4 f400a
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 16 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

FD400R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

IGBT FF 300 r12

Abstract: FF400R12KF4 FF400R12KF
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

IGBT FZ 1600 r12 kf4

Abstract: FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

FZ800R12KF4

Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

G1 TRANSISTOR

Abstract: FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

FD600R12KF4

Abstract: G1 TRANSISTOR
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

G1 TRANSISTOR

Abstract: FD600R12KF4
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 16 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

FZ1200R12KF4

Abstract: IGBT FZ 1200 r12 fz 1000 r12 kf 4 70nH IC 7800 FZ1200R12KF fz 1200 r12 kf 4 eupec FZ 50 A 12 KF
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

40TTS12

Abstract: scr 1a 1200V DSA00357877
Contextual Info: Bulletin I2167 04/05 SAFEIR Series 40TTS12 PHASE CONTROL SCR Description/ Features The 40TTS12 SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 140°C junction temperature.

FZ1200R12KF4

Abstract: ic 7800 fz 1200 r12 kf 4 KF 35 transistor IGBT module FZ 1200 fz 1000 r12 kf 4
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

FD400R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

IGBT FF 300 r12

Abstract: FF400R12KF4
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

FD600R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1