4000 NPN Search Results
4000 NPN Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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2SC5198 |
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NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) |
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4000 NPN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LXR-0000-084
Abstract: LRS-5050-103 LRK-5050-103 5050 led lichtschranke
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5050LR LXR-0000-084 LRS-5050-103 LRK-5050-103 5050 led lichtschranke | |
CD 4060 PIN DIAGRAM
Abstract: constant current power supply circuit diagram schematic diagram inverter 12v to 5v 30a ic 4060 pin configuration diagram Regulated Power Supply Schematic Diagram ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a F103 potentiometer ic601 ic 4060 pin diagram lambda LMS
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LLS-4000 LLS-4000 IM-LLS-4000 IC50I CD 4060 PIN DIAGRAM constant current power supply circuit diagram schematic diagram inverter 12v to 5v 30a ic 4060 pin configuration diagram Regulated Power Supply Schematic Diagram ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a F103 potentiometer ic601 ic 4060 pin diagram lambda LMS | |
ic 4001Contextual Info: PHASE LOCKED OSCILLATOR MODEL MDR6100-4000 4000 MHz Features ! ! ! ! Low Phase Noise: -122 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical External Reference Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (MHz)2 Mechanical Tuning |
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MDR6100-4000 20log ic 4001 | |
ic 4001
Abstract: microwave alarm circuit
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MDR5100-4000 20log ic 4001 microwave alarm circuit | |
turck 8 pin m12 connector
Abstract: OMRON RM201 marking code A1W SMC ex250 AN203 MATSUSHITA MATSUA compressor wiring diagram frc100a solenoid valve 24v JIS-X-5101 eb142
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ES11-81 SV1000/2000/3000/4000 turck 8 pin m12 connector OMRON RM201 marking code A1W SMC ex250 AN203 MATSUSHITA MATSUA compressor wiring diagram frc100a solenoid valve 24v JIS-X-5101 eb142 | |
EEX500-IB1-E8
Abstract: EX250 JIS-X-5101 connector 11 pin female lumberg EX500-IB1 GVVZS3000-21A-4 diode catalogue OMRON BF 302 VINCENT sv 236 EX120-SIB1
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ES11-81 SV1000/2000/3000/4000 EEX500-IB1-E8 EX250 JIS-X-5101 connector 11 pin female lumberg EX500-IB1 GVVZS3000-21A-4 diode catalogue OMRON BF 302 VINCENT sv 236 EX120-SIB1 | |
GVVZS3000-21A-2
Abstract: VVQ2000-51A-C10 SS5V1-W16SA1WD-06B-C6 EX500-AC000-S diode catalogue AS3000 SS5V1-16 GVVZS3000-21A-4 IEC529 turck 8 pin m12 connector
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SV1000/2000/3000/4000 30Vrms UL1310, UL1585 GVVZS3000-21A-2 VVQ2000-51A-C10 SS5V1-W16SA1WD-06B-C6 EX500-AC000-S diode catalogue AS3000 SS5V1-16 GVVZS3000-21A-4 IEC529 turck 8 pin m12 connector | |
28B11
Abstract: 2SB1126 2SD1626
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2SB1126/2SD1626 2SB1126 250mm' 28B11 2SD1626 | |
2SB1126Contextual Info: 2SB1126 / 2SD1626 2SB1126 / 2SD1626 Ordering number : EN1721B PNP / NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers. Features • • • High DC current gain 4000 or greater . |
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2SB1126 2SD1626 EN1721B 2SB1126 2SD1626/D | |
D1224
Abstract: 2SD1224
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2SD1224 D1224 2SD1224 | |
Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) |
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2SD1224 | |
2SD1224
Abstract: D1224
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2SD1224 2SD1224 D1224 | |
Contextual Info: BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model: >4000 V http://onsemi.com Machine Model: >400 V • NSV Prefix for Automotive and Other Applications Requiring • COLLECTOR |
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BC846BM3T5G, NSVBC846BM3T5G BC846BM3/D | |
Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) |
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2SD1224 | |
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MARKING 358 sot-23
Abstract: marking code 359 sot-23 marking 1G SOT23 359 sot23 On semiconductor date Code sot-23 355 sot-23 marking 1F SOT-23 sot-23 body marking 02 Code sot-23 on semiconductor 359 marking sot23
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BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 MARKING 358 sot-23 marking code 359 sot-23 marking 1G SOT23 359 sot23 On semiconductor date Code sot-23 355 sot-23 marking 1F SOT-23 sot-23 body marking 02 Code sot-23 on semiconductor 359 marking sot23 | |
FR SOT23-3
Abstract: BC847CLT1G 1B SOT23-3 BC848ALT1G BC846 BC846A BC846ALT1 BC847 1G SOT-23 BC848
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BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 FR SOT23-3 BC847CLT1G 1B SOT23-3 BC848ALT1G BC846 BC846A 1G SOT-23 | |
tu235Contextual Info: SURFACE-MOUNT D72Y1.5D1.2 NPN POWER DARLINGTON TRANSISTORS 30 VOLTS 1.5 AMP, 10 WATTS Designed for pulse motor drive, hammer drive applications, switching applications, power amplifier applications. Features: • High DC Current Gain : hFE = 4000 Min. (VcE = 2V, lc = 150mA) |
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D72Y1 150mA) tu235 | |
D1224
Abstract: 2SD1224
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2SD1224 D1224 2SD1224 | |
Contextual Info: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) |
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2SD1224 | |
2SD1224
Abstract: D1224
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2SD1224 2SD1224 D1224 | |
2SB865Contextual Info: Ordering number:828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, motor drivers. unit:mm 2006A [2SB865/2SD1153] Features · High DC current gain 4000 or more . |
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2SB865/2SD1153 2SB865/2SD1153] SC-51 2SB865 2SB865 | |
2SD1784Contextual Info: 2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) |
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2SD1784 2SD1784 | |
BC846BLT1
Abstract: BC846 BC846ALT1 BC846ALT3 BC846BLT3 BC847 BC847ALT1 BC848 BC849 BC850
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BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 BC846BLT1 BC846 BC846ALT3 BC846BLT3 BC847ALT1 BC849 BC850 | |
BC846
Abstract: BC846ALT1 BC846ALT3 BC846BLT1 BC846BLT3 BC847 BC847ALT1 BC848 BC849 BC850
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BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 BC846 BC846ALT3 BC846BLT1 BC846BLT3 BC847ALT1 BC849 BC850 |