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    Gossen Metrawatt MAVOWATT 270-400 MINI FLEX PKG

    Meter: power quality analyser; LCD 7"; Network: three-phase; 4GB
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    Phoenix Contact SAC-4P-M12MS/0 15-400/MINF

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    400MIN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30


    Original     		PDF 2SC4073 Pulse10) O220F) 100max 400min 10typ 30typ

    npn high voltage transistor 500v 8a

    Abstract: 2SC4139 si50
    Text: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj


    Original     		PDF 2SC4139 MT-100 100max 400min 10typ 85typ Pulse30) npn high voltage transistor 500v 8a 2SC4139 si50

    2SC4546

    Abstract: FM20 vbe 12v, vce 600v NPN Transistor
    Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A


    Original     		PDF 2SC4546 Pulse14) 10typ 55typ 400min 100max O220F) 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor

    2SC5071

    Abstract: No abstract text available
    Text: 2SC5071 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA V VCEO 400 10 V(BR)CEO IC=25mA 400min 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max


    Original     		PDF 2SC5071 MT-100 100max 400min 10typ 105typ 100mA 200mA 2SC5071

    2SC4073

    Abstract: FM20 SE-05
    Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor V ICBO VCEO 400 V VEBO 10 V 5(Pulse10) A IC Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30 IB 2


    Original     		PDF 2SC4073 Pulse10) 100max 400min 10typ 30typ O220F) 2SC4073 FM20 SE-05

    2SC3890

    Abstract: No abstract text available
    Text: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat)


    Original     		PDF 2SC3890 Pulse14) O220F) 100max 400min 10typ 50typ 2SC3890

    vbe 10v, vce 500v NPN Transistor

    Abstract: 2SC4298 npn triple diffused transistor 500v 8a
    Text: 2SC4298 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C)


    Original     		PDF 2SC4298 100max 400min Pulse30) 10typ 85typ FM100 vbe 10v, vce 500v NPN Transistor 2SC4298 npn triple diffused transistor 500v 8a

    2SC5130

    Abstract: FM20
    Text: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2


    Original     		PDF 2SC5130 100max 10max 400min Pulse10) 20typ 30typ O220F) 2SC5130 FM20

    2SC4296

    Abstract: No abstract text available
    Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		PDF 2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296

    2SC4138

    Abstract: 2sc4138 NPN Transistor
    Text: 2SC4138 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 IC=6A, IB=1.2A 0.5max 4 A VCE(sat) PC 80(Tc=25°C)


    Original     		PDF 2SC4138 100max 400min Pulse20) 10typ 85typ MT-100 2SC4138 2sc4138 NPN Transistor

    2SC3890

    Abstract: FM20
    Text: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A


    Original     		PDF 2SC3890 100max 400min Pulse14) 10typ 50typ O220F) 2SC3890 FM20

    2SC4662

    Abstract: FM20
    Text: 2SC4662 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A


    Original     		PDF 2SC4662 100max 400min 20typ 30typ Pulse10) O220F) 2SC4662 FM20

    2SC4297

    Abstract: No abstract text available
    Text: 2SC4297 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A


    Original     		PDF 2SC4297 100max 400min Pulse24) 10typ 105typ FM100 2SC4297

    transistor npn high speed switching 5A 600v

    Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
    Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A


    Original     		PDF 2SC4546 Pulse14) 10typ 55typ 400min 100max O220F) transistor npn high speed switching 5A 600v 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor

    2SC5071

    Abstract: No abstract text available
    Text: 2SC5071 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA V VCEO 400 10 V(BR)CEO IC=25mA 400min 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max


    Original     		PDF 2SC5071 MT-100 100max 400min 10typ 105typ 100mA 200mA 2SC5071

    2SC4138

    Abstract: No abstract text available
    Text: 2SC4138 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 4 A VCE(sat) IC=6A, IB=1.2A


    Original     		PDF 2SC4138 MT-100 100max 400min Pulse20) 10typ 85typ 2SC4138

    2SC4418

    Abstract: transistor 2sc4418 2sc4418 transistor FM20
    Text: 2SC4418 Application : Switching Regulator and General Purpose µA IEBO VEB=10V 100max µA V BR CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A


    Original     		PDF 2SC4418 100max 400min Pulse10) 20typ 30typ O220F) 2SC4418 transistor 2sc4418 2sc4418 transistor FM20

    2SC4296

    Abstract: No abstract text available
    Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		PDF 2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296

    2SC4139

    Abstract: npn triple diffused transistor 500v 8a
    Text: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj


    Original     		PDF 2SC4139 MT-100 100max 400min 10typ 85typ Pulse30) 2SC4139 npn triple diffused transistor 500v 8a

    2SC4434

    Abstract: npn triple diffused transistor 500v 8a
    Text: 2SC4434 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A


    Original     		PDF 2SC4434 MT-100 100max 400min Pulse30) 10typ 135typ 2SC4434 npn triple diffused transistor 500v 8a

    2SC4434

    Abstract: npn triple diffused transistor 500v 8a npn high voltage transistor 500v 8a
    Text: 2SC4434 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A


    Original     		PDF 2SC4434 MT-100 100max 400min Pulse30) 10typ 135typ 2SC4434 npn triple diffused transistor 500v 8a npn high voltage transistor 500v 8a

    2SC4297

    Abstract: No abstract text available
    Text: 2SC4297 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A


    Original     		PDF 2SC4297 100max 400min Pulse24) 10typ 105typ 10itter FM100 2SC4297

    2SC4140

    Abstract: ATV-18 vbe 10v, vce 500v NPN Transistor 110MP
    Text: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A


    Original     		PDF 2SC4140 MT-100 100max 400min Pulse36) 10typ 165typ 2SC4140 ATV-18 vbe 10v, vce 500v NPN Transistor 110MP

    vbe 10v, vce 500v NPN Transistor

    Abstract: 2SC4418 FM20 2sc4418 transistor 503ET
    Text: 2SC4418 Application : Switching Regulator and General Purpose µA IEBO VEB=10V 100max µA V BR CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A


    Original     		PDF 2SC4418 100max 400min Pulse10) 20typ 30typ O220F) vbe 10v, vce 500v NPN Transistor 2SC4418 FM20 2sc4418 transistor 503ET