LZC-7xxx00
Abstract: 400nm uv UV led 405 nm 400nm uv led 400NM
Text: LedEngin, Inc. High Radiant Flux Density 400nm UV LED Emitter LZC-00UA00 Key Features • • Ultra-bright, compact 12-die, 400nm UV LED Very high Radiant Flux density, 40 W/cm2 Small high density foot print, 9.0mm x 9.0mm x 5.4mm
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400nm
LZC-00UA00
12-die,
JESD22-A102-C)
LZC-7xxx00
400nm uv
UV led 405 nm
400nm uv led
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LZP-00UA00
Abstract: LED UV 400nm
Text: High Radiant Flux Density 400nm Violet LED Emitter LZP-00UA00 Key Features • Ultra-bright, compact 24-die, 400nm Violet LED • Very high Radiant Flux density, 30 W/cm2 Small high density foot print, 12.0mm x 12.0mm x 6.7mm package Surface mount ceramic package with integrated glass lens
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400nm
LZP-00UA00
24-die,
JESD22-A102-C)
LZP-00UA00
LED UV 400nm
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ISO-13486
Abstract: UV-035DQC def07 UV-035DQ AQAP110 UV-100DQC UV-005DQ OSI Optoelectronics AQAP-1 UV-001D
Text: UV-DQ / DQC / DK SERIES new Planar Diffused UV Enhanced Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–DQ and UV–DQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity
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200-400nm
190nm.
320nm.
Sh4072
ISO-13486
UV-035DQC
def07
UV-035DQ
AQAP110
UV-100DQC
UV-005DQ
OSI Optoelectronics
AQAP-1
UV-001D
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ultraviolet sensor
Abstract: UV30DZ
Text: Ultraviolet selective thin film sensor UV30DZ Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area
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UV30DZ
400nm
ultraviolet sensor
UV30DZ
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2L20
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S2-0034 Description: 2L20UV_SU9 The SiTek 2L20UV PSD is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S2-0034
2L20UV
400nm.
2L20
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0073 Description: 1L10UV_CP2 The SiTek 1L10UV PSD is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0073
1L10UV
400nm.
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ANALOGUE
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S2-0006 Description: 2L4UV_MP1 The SiTek 2L4UV PSD is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S2-0006
400nm.
ANALOGUE
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S100-72
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0072 Description: 1L2,5UV_CP2 The SiTek 1L2,5UV PSD is optimised for use in the UV wavelength region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0072
400nm.
S100-72
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S2-0006 Description: 2L4UV_MP1 The SiTek 2L4UV PSD is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S2-0006
400nm.
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RLT365-10E
Abstract: No abstract text available
Text: RLT365-10E TECHNICAL DATA UV LED 5 mm RLT365-10E is a 365nm UV LED that utilizes an UG11 filter, blocking visible wavelenght above 400nm. It emits pure UV light. Outline Dimensions Absolute Maximum Ratings Ta=25°C Item DC Forward Current Peak Pulse Forward Current *1
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RLT365-10E
RLT365-10E
365nm
400nm.
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RLT370-10E
Abstract: No abstract text available
Text: RLT370-10E TECHNICAL DATA UV LED 5 mm RLT370-10E is a 370nm UV LED that utilizes an UG11 filter, blocking visible wavelenght above 400nm. It emits pure UV light. Outline Dimensions Absolute Maximum Ratings Ta=25°C Item DC Forward Current Peak Pulse Forward Current *1
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RLT370-10E
RLT370-10E
370nm
400nm.
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0032 Description: 1L5UV_CP2 The SiTek 1L5UV PSD is optimised for use in the UV wavelength region, 200 to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0032
400nm.
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Lateral Effect Photodiode
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0034 Description:1L30UV_SU2 The SiTek 1L30UV is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0034
1L30UV
400nm.
Lateral Effect Photodiode
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Untitled
Abstract: No abstract text available
Text: EPD-360-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVA UV glass with filter SiC TO-5 Description High spectral sensitivity in the UVA range 330 nm - 400nm , low cost chip based on SiC 1,2 Applications Environmental technology, analytical techniques,
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EPD-360-0-0
400nm)
360nm
D-12555
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0032 Description: 1L5UV_CP2 The SiTek 1L5UV PSD is optimised for use in the UV wavelength region, 200 to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0032
400nm.
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S2-0034
Abstract: 2L20UV 2L20
Text: High Linearity Position Sensing Detector Part Number: S2-0034 Description: 2L20UV_SU9 The SiTek 2L20UV PSD is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S2-0034
2L20UV
400nm.
2L20
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1l10
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0073 Description: 1L10UV_CP2 The SiTek 1L10UV PSD is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0073
1L10UV
400nm.
1l10
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0074 Description: 1L20UV_CP3 The SiTek 1L20UV is optimised for use in the UV wave length region 200, to 400nm. As SiTeks standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0074
1L20UV
400nm.
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Lateral Effect Photodiode
Abstract: S2-0016 2L10UV
Text: High Linearity Position Sensing Detector Part Number: S2-0016 Description: 2L10UV_SU7 The SiTek 2L10UV PSD is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S2-0016
2L10UV
400nm.
Lateral Effect Photodiode
S2-0016
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Lateral Effect Photodiode
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0034 Description:1L30UV_SU2 The SiTek 1L30UV is optimised for use in the UV wave length region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0034
1L30UV
400nm.
Lateral Effect Photodiode
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Untitled
Abstract: No abstract text available
Text: High Linearity Position Sensing Detector Part Number: S1-0072 Description: 1L2,5UV_CP2 The SiTek 1L2,5UV PSD is optimised for use in the UV wavelength region 200, to 400nm. As SiTek standard PSDs it works according to the Lateral Effect Photodiode principle. It is an analogue device and
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S1-0072
400nm.
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UV-005EQ
Abstract: UV-035EQ spectrophotometer E152801 E14800 UV-001D UV-013EQ 320nm 100-EC UV-100EC
Text: UV-EQ / EQC / EK SERIES new UV Enhanced, Suppressed NIR Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–EQ and UV–EQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity down to 190 nm.
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200-400nm
320nm.
UV-035DC
UV-100DC
UV-035DQC
UV-100DQC
XUV-50C
XUV-100C
XUV-005
XUV-020
UV-005EQ
UV-035EQ
spectrophotometer
E152801
E14800
UV-001D
UV-013EQ
320nm
100-EC
UV-100EC
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photodiode amplifier
Abstract: OPA128 SLOA011 photo diode TL07x BURR BROWN
Text: Ultraviolet selective thin film sensor “TW30DY” NEW: Read important application notes on page 4 ff. Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm
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TW30DY"
400nm
SLOA011)
photodiode amplifier
OPA128
SLOA011
photo diode
TL07x
BURR BROWN
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TW30DZ
Abstract: photodiode amplifier OPA128 SLOA011
Text: Ultraviolet selective thin film sensor “TW30DZ” NEW: Read important application notes on page 4 ff. Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm
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TW30DZ"
400nm
SLOA011)
TW30DZ
photodiode amplifier
OPA128
SLOA011
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