400V 150U Search Results

bav50

Abstract: bav500
Contextual Info: BAV5004LP HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: 50ns Maximum 400V High Reverse Breakdown Voltage Rating Low Capacitance: 2.5pF Maximum Surface Mount Package Ideally Suited for Automated Insertion

transistor BU406

Abstract: 400V 100MA NPN npn transistor 400V Transistor Transistor Power Horizontal NPN Transistor 5A 400V BU406 400V switching transistor crt horizontal deflection circuit transistor for horizontal deflection output NPN Power Transistor 5A 400V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406 DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages

Contextual Info: BAV5004LP HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: 50ns Maximum 400V High Reverse Breakdown Voltage Rating Low Capacitance: 2.5pF Maximum Surface Mount Package Ideally Suited for Automated Insertion

mmbd5004

Abstract: MMBD5004A
Contextual Info: MMBD5004A/C/S HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • NEW PRODUCT Fast Switching Speed: 50ns High Reverse Breakdown Voltage Rating: 400V Low Leakage Current Surface Mount Package Ideally Suited for Automated Insertion

A1381

Contextual Info: Ordering number : ENA1381A TIG058E8 N-Channel IGBT http://onsemi.com 400V, 150A, VCE sat ;4V, Single ECH8 Features • • • • Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance • • • Low voltage drive (4V)

MMBD5004

Abstract: YW marking MMBD5004S marking code YW DIODE DS30832
Contextual Info: MMBD5004S HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • Fast Switching Speed: 50ns Surface Mount Package Ideally Suited for Automated Insertion High Reverse Breakdown Voltage Rating: 400V Lead Free by Design/RoHS Compliant Note 1

Contextual Info: MMBD5004BRM HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY Features Mechanical Data • • • • • • • • N EW PRODU CT Two Series Diode Circuits Connect to Form Full Wave Bridge Fast Switching Speed Low Capacitance 400V Reverse Breakdown Voltage Rating

MMBD5004A

Contextual Info: MMBD5004A/C/S HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • N EW PRODU CT Fast Switching Speed: 50ns High Reverse Breakdown Voltage Rating: 400V Low Leakage Current Surface Mount Package Ideally Suited for Automated Insertion

op07 equivalent single supply

Abstract: T1012A LT1364 equivalent LT318A LT1256 equivalent LTC1150 equivalent lt1056c LTC1051 1013D LT1022A
Contextual Info: Op Amp Selection Guide Selection by Design Parameter High Slew Rate Typ Slew Rate Low Power < 50 liA < 1m A < 60|iA > 400V/HS > 50V/ JS >10V/|iS Maximum Supply Current (per Amplifier L F41 2A (D ) LM118/318 LT1190 LT1230 (Q) LT1022ALL LT118A/318A LT1191 LT1252

845 diode

Abstract: irgp4063
Contextual Info: PD - 97210A IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA

SMBJ20A

Abstract: capacitor 100nf 400v SMBJ12A
Contextual Info: date 06/20/2014 page 1 of 7 SERIES: PBK-5 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • up to 5 W continuous output ultra compact SIP package universal input voltage: 85~264 Vac / 100~400 Vdc single regulated outputs from 3.3~24 Vdc

Contextual Info: PD - 97210A IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA

IRGP4063D

Contextual Info: PD - 97210A IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA

SMBJ20A

Abstract: SMBJ12A
Contextual Info: date 08/09/2013 page 1 of 6 SERIES: PBK-3 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • • up to 3 W continuous output compact SIP package universal input 85~264 Vac single regulated outputs from 5~24 V 3,000 Vac isolation

transistor model h1a

Abstract: IRGS4045D irgs4045 JESD-47 lm 230 wf1 JESD47F
Contextual Info: IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC  6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C C E G VCE on typ.  1.7V G D2-Pak IRGS4045DPbF E n-channel Applications • Appliance Motor Drive  Inverters

IRGR4045D

Contextual Info: IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features •          IC  6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

IRGP4660

Abstract: IRGP4660D-EPBF
Contextual Info: IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 60A, TC = 100°C C C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 48A E n-channel Applications • Industrial Motor Drive

SMBJ20A

Contextual Info: date 08/09/2013 page 1 of 6 SERIES: PBK-1 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • up to 1 W continuous output compact SIP package single regulated outputs from 5~24 V 3,000 Vac isolation over current and short circuit protections

Xenon Flash 6v

Abstract: xenon Xenon Flash xenon 5W 12V TIG032TS TIG030TS TIG014SS TIG058E8 RE0208DA IGBT 320V
Contextual Info: T OP I C S 新 闻 发 表 新 商 品 2009年1月22日新闻发表 手机用超小型Xenon Flash IGBT 它以业界最小2.8mm x 2.9mm实现了ICP=150A 安装高度实现了0.9mm! 最适用于带照相功能的手机。它实现了业界最小*安装面积。*: 截至2009年1月22日

IGBT

Abstract: TIG058E8 igbt 800v 50a igbt xenon tube igbt 12V 1A xenon tube RE0208 TIG030TS 12v igbt TIG032TS
Contextual Info: T OP I C S ニュースリリース製品トピックス 2009年1月22日リリース 携帯電話向け超小型キセノンフラッシュ用IGBTを開発 実装高0.9mmを実現！ 業界最小※サイズ 2.8mm x 2.9mm でIcp=150Aを実現！ カメラ付き携帯電話に最適な業界最小※実装面積を実現！※：2009年1月22日現在

SMBJ20A

Contextual Info: date 03/25/2014 page 1 of 7 SERIES: PBK-1 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • up to 1 W continuous output compact SIP package single regulated outputs from 5~24 V 3,000 Vac isolation over current and short circuit protections

IRGP4063DPBF

Abstract: IRGP4063D international rectifier
Contextual Info: IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA

Contextual Info: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters

irgp4063pbf

Abstract: IRGP4063DPBF IRGP4063
Contextual Info: PD - 97404 IRGP4063PbF IRGP4063-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of the parts tested for ILM 