IKP04N60T
Abstract: No abstract text available
Text: IKP04N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP04N60T
Dec-04
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Untitled
Abstract: No abstract text available
Text: IKP04N60T pIJIKI04N60Tdsadsa TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5 s
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IKP04N60T
pIJIKI04N60Tdsadsa
PG-TO-220-3-1
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ic 7818
Abstract: K04T60 diode 400V 4A FAST RECOVERY DIODE 200ns 8A 40V IKI04N60T IKP04N60T PG-TO-220-3-1 diode 4A 400v 9v 4a 10NC15
Text: IKP04N60T pIJIKI04N60Tdsadsa TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5 s
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IKP04N60T
pIJIKI04N60Tdsadsa
PG-TO-220-3-1
ic 7818
K04T60
diode 400V 4A
FAST RECOVERY DIODE 200ns 8A 40V
IKI04N60T
IKP04N60T
PG-TO-220-3-1
diode 4A 400v
9v 4a
10NC15
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IKP04N60T
Abstract: Q67040S4714 diode 400V 4A ic 7818
Text: IKP04N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
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IKP04N60T
Dec-04
IKP04N60T
Q67040S4714
diode 400V 4A
ic 7818
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K04T60
Abstract: IKP04N60T PG-TO-220-3-1 ic 7818
Text: IKP04N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP04N60T
K04T60
IKP04N60T
PG-TO-220-3-1
ic 7818
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K04T60
Abstract: No abstract text available
Text: IKP04N60T pIJIKI04N60Tdsadsa TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5 s
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IKP04N60T
pIJIKI04N60Tdsadsa
PG-TO-220-3-1
K04T60
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Untitled
Abstract: No abstract text available
Text: IKP04N60T pIJdsads TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode •VeryVery VCE sat 1.5V (typ.) low low VCE(sat) 1.5V (typ.) • • • • • •
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IKP04N60T
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ic 7818
Abstract: No abstract text available
Text: IKP04N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP04N60T
ic 7818
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ic 7818
Abstract: No abstract text available
Text: IKP04N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP04N60T
ic 7818
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F1
QW-R502-577
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series Low Loss IGBT : IGU04N60T q IGBT in TRENCHSTOP™ technology C G • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - frequency inverters
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IGU04N60T
PG-TO251-3
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diode 8a 400V TO252
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F
QW-R502-577
diode 8a 400V TO252
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G04T60
Abstract: No abstract text available
Text: TRENCHSTOP Series Low Loss IGBT: IGU04N60T q IGBT in TRENCHSTOP™ technology C G • Very low VCE sat 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5s Designed for : - frequency inverters
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IGU04N60T
PG-TO251-3
G04T60
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series Low Loss IGBT : • IGU04N60T q IGBT in Trench and Fieldstop technology C Very low VCE sat 1.5 V (typ.) Maximum junction temperature 175 °C Short circuit withstand time – 5s Designed for : - frequency inverters
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IGU04N60T
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AN-994
Abstract: IRG4RC10SD Transistor Mosfet N-CH 200V 40A
Text: 2,' $%& IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4RC10SD
O-252AA
AN-994
IRG4RC10SD
Transistor Mosfet N-CH 200V 40A
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CS400125
Abstract: ICE2PCS04 300w mosfet power amplifier circuit diagram 300w transistor power amplifier circuit diagram heat sink to220 ICE2PCS01 s10k275 Varistor 391 10k spp20n60 SPP20N60C3
Text: Application Note, V1.0, October 2007 EVALPFC2-ICE2PCS04 300W PFC Evaluation Board with CCM PFC controller ICE2PCS04 Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2007-10-30 Published by Infineon Technologies AG 81726 Munich, Germany
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EVALPFC2-ICE2PCS04
ICE2PCS04
85VAC
110VAC
230VAC
265VAC
EN61000-3-2
85VAC,
265VAC,
CS400125
ICE2PCS04
300w mosfet power amplifier circuit diagram
300w transistor power amplifier circuit diagram
heat sink to220
ICE2PCS01
s10k275
Varistor 391 10k
spp20n60
SPP20N60C3
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toyota Speed Sensor
Abstract: igbt sinewave inverter three phase bridge inverter in 180 degree and 120 squirrel cage induction generator
Text: TM September 2013 • EV/HEV History at Motorola / Freescale • Automotive High Power IGBT Product Overview • Introduction to Induction Motors • Description of Freescale’s Automotive EV/HEV Inverter • Inverter Testing using Basic V/F Motor Control
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140HP
110VAC
toyota Speed Sensor
igbt sinewave inverter
three phase bridge inverter in 180 degree and 120
squirrel cage induction generator
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100MF 35v
Abstract: application of wattmeter 86H-7071 smd 1a 100v diode bridge DIODE SMD 1206 philips make 150mF capacitor 400V D1N4937 SMD 1218 capacitor SFH6156-2T diode d1n4148
Text: AND8288/D NCP1351 Evaluation Board, a 12 V / 2 A Full DCM Adapter Prepared by Stéphanie Conseil http://onsemi.com This application note describes a 12 V / 2 A simple adapter operated by NCP1351, a fixed on- time / variable off-time controller. This adapter features a very low standby power below 90
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AND8288/D
NCP1351
NCP1351,
100MF 35v
application of wattmeter
86H-7071
smd 1a 100v diode bridge
DIODE SMD 1206 philips make
150mF capacitor 400V
D1N4937
SMD 1218 capacitor
SFH6156-2T
diode d1n4148
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73247
Abstract: No abstract text available
Text: 2014 | | CATALOGO GENERALE - GENERAL CATALOGUE | Via E. Fermi, 40/42 20090 Assago, MI | Italia Tel. +39 02 93977.1 Fax +39 02 93904565 info@italweber.it www.italweber.it CATALOGO GENERALE | 2014 2014 2014 | | CATALOGO GENERALE - GENERAL CATALOGUE | | CATALOGO
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e78996 india
Abstract: IRFK2DE50 IRFK2FE50
Text: Bulletin E2796 International iiQRlRectifier IRFK2DE50,IRFK2FE50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration H igh Current C apability. UL re co g n ise d E 78996. E le ctrica lly Isolated B ase Plate. E asy A s s e m b ly into E quipm ent.
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E2796
IRFK2DE50
IRFK2FE50
E78996.
T0-240
CH-8032
IL60067.
NJ07650.
FL32743.
CA90245.
e78996 india
IRFK2FE50
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2sk1358
Abstract: toshiba 2sk1358
Text: TOSHIBA 2SK1358 Field Effect Transistor Industrial A pplications Unit in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance • R d s (O N) = 1-1ß (Typ.)
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2SK1358
300nA
--720V
2sk1358
toshiba 2sk1358
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E78996 rectifier module
Abstract: IRFK4HE50 E271 e78996 india IRFK4JE50
Text: Bulletin E27109 International lîâRlRectifier IRFK4HE50,IRFK4JE50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • H igh C urrent C apability. UL recognise d E 78996. E lectrically Isolated B ase Plate. E asy A ssem b ly into E quipm ent.
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E27109
IRFK4HE50
IRFK4JE50
E78996.
T0-240
CH-8032
IL60067.
NJ07650.
FL32743.
CA90245.
E78996 rectifier module
E271
e78996 india
IRFK4JE50
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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PD9823
Abstract: No abstract text available
Text: Data Sheet No. PD-9.823A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7360 IRHM836Q ;n N-CHANNEL MEGA RAD HARD 400 Volt, 0.22 Q, MEGA RAD HARO HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7360
IRHM836Q
1x106
1x105
1x106
IRHM7360D
IRHM7360U
O-254
MIL-S-19500
H-250
PD9823
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