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    400V HIGH SPEED DIODE Search Results

    400V HIGH SPEED DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    400V HIGH SPEED DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    datasheet of rectifier diode

    Abstract: "RECTIFIER DIODE" Rectification RECTIFIER DIODE diode rectifier Diodes, Rectifiers rectifier diode datasheet 1SR153 1sr153-400
    Text: Diodes High–speed rectifier diode 1SR153–400 FApplications High speed rectification FExternal dimensions Units: mm FFeatures 1) Cylindrical mold. (MSD) 2) High reliability. 3)ăAssures 400V while maintaining high speed. Rectifier diodes FConstruction


    Original     		PDF 1SR153 datasheet of rectifier diode "RECTIFIER DIODE" Rectification RECTIFIER DIODE diode rectifier Diodes, Rectifiers rectifier diode datasheet 1sr153-400

    1SR124

    Abstract: 1SR124-400A
    Text: Diodes High–speed rectifier diode 1SR124–400A FApplications High speed rectification FExternal dimensions Units: mm FFeatures 1) Glass sealed envelope. (JEDEC: DO–41) 2) High speed. (trr=0.4µs Max.) 3) Assures 400V while maintaining high speed. Rectifier diodes


    Original     		PDF 1SR124 1SR124-400A

    1SR124-400A

    Abstract: No abstract text available
    Text: 1SR124-400A Diodes Rectifier diode 1SR124-400A zExternal dimensions Units : mm zApplications High speed rectification CATHODE BAND (GREEN) zFeatures 1) Glass sealed envelope. (GSR) 2) High speed. (trr=0.4µs Max.) 3) VRM=400V guaranteed while maintaining high speed.


    Original     		PDF 1SR124-400A DO-41 1SR124-400A

    1SR156

    Abstract: No abstract text available
    Text: Diodes High–speed rectifier diode 1SR156–400 FApplications High speed rectification FExternal dimensions Units: mm FFeatures 1) Small surface mounting type. (PMDS) 2) High reliability. 3)ăPeak reverse voltage is 400V even at high speed. Rectifier diodes


    Original     		PDF 1SR156

    1SR153-400

    Abstract: No abstract text available
    Text: 1SR153-400 Diodes Rectifier diode 1SR153-400 !External dimensions Units : mm !Applications High speed rectification CATHODE BAND (SILVER) φ0.6±0.1 !Features 1) Cylindrical mold. (MSR) 2) VRM=400V guaranteed while maintaining high speed. 3) High reliability.


    Original     		PDF 1SR153-400 DO-41 1SR153-400

    1SR153-400

    Abstract: DIODE DO-41 mini
    Text: 1SR153-400 Diodes Rectifier diode 1SR153-400 !External dimensions Units : mm !Applications High speed rectification CATHODE BAND (SILVER) φ0.6±0.1 !Features 1) Cylindrical mold. (MSR) 2) VRM=400V guaranteed while maintaining high speed. 3) High reliability.


    Original     		PDF 1SR153-400 DO-41 1SR153-400 DIODE DO-41 mini

    Untitled

    Abstract: No abstract text available
    Text: ERC18 1.2A ( 200, 400V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Features High speed switching Marking High reliability Color code : White Voltage class Lot No. Cathode mark 11 High speed switching C18 0 2 Type name


    Original     		PDF ERC18 et-02

    Untitled

    Abstract: No abstract text available
    Text: ERC18 1.2A ( 200, 400V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Features High speed switching Marking High reliability Color code : White Voltage class Lot No. Cathode mark 11 High speed switching C18 0 2 Type name


    Original     		PDF ERC18

    Untitled

    Abstract: No abstract text available
    Text: ERC18 1.2A ( 200, 400V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Features High speed switching Marking High reliability Color code : White Voltage class Lot No. Cathode mark 11 High speed switching C18 0 2 Type name


    Original     		PDF ERC18

    1SS311

    Abstract: 13G1B
    Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Low forward voltage : VF = 0.94V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance


    Original     		PDF 1SS311 SC-59 1SS311 13G1B

    1SS399

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS399 SC-61 10mstransportation 1SS399

    Untitled

    Abstract: No abstract text available
    Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Unit in mm Low forward voltage : VF = 0.94V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance


    Original     		PDF 1SS311 SC-59 961001EAA2'

    SC61 equivalent

    Abstract: TOSHIBA DIODE 1SS399 sc61 SC-61 EIAJ
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5 s (typ.) Small total capacitance


    Original     		PDF 1SS399 SC-61 100mA SC61 equivalent TOSHIBA DIODE 1SS399 sc61 SC-61 EIAJ

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS398 SC-59 1SS398

    1SS397

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS397 SC-70 1SS397

    Untitled

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS399 SC-61 10msditions 961001EAA2'

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS398 SC-59 961001EAA2' 1SS398

    Untitled

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS397 SC-70 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: BAV5004WS HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: 50ns Maximum  400V High Reverse Breakdown Voltage Rating    Low Capacitance: 2.5pF Maximum  Surface Mount Package Ideally Suited for Automated Insertion


    Original     		PDF BAV5004WS AEC-Q101 OD323 J-STD-020 DS30733

    Untitled

    Abstract: No abstract text available
    Text: HSK122-Silicon Epitaxial Planar Diode for High Voltage Switching Outline Features • High reverse voltage. Vr = 400V • LLD package is suitable for high density surface mounting and high speed assembly. Cathode band I Cathode band


    OCR Scan     		PDF HSK122------------------------Silicon HSK122

    Untitled

    Abstract: No abstract text available
    Text: HSK122 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-172B Z Rev. 2 Aug. 1995 Features • High reverse voltage. (VR= 400V) • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information


    OCR Scan     		PDF HSK122 ADE-208-172B 100mA

    Untitled

    Abstract: No abstract text available
    Text: 1SS398 TO SHIBA 1SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp= 1.0V Typ. : VR = 400V (Min.)


    OCR Scan     		PDF 1SS398 SC-59 961001EAA2'

    1SS399

    Abstract: No abstract text available
    Text: TOSHIBA 1SS399 1 SS399 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vp = 1.0V Typ. VR = 400V (Min.)


    OCR Scan     		PDF 1SS399 SC-61 300pi 961001EAA2' 1SS399

    Untitled

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA 1SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr= 1.0V Typ. : V r = 400V (Min.)


    OCR Scan     		PDF 1SS397 SC-70 961001EAA2'