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    400V P - CHANNEL MOS Search Results

    400V P - CHANNEL MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK5R1A08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK155E65Z
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Visit Toshiba Electronic Devices & Storage Corporation
    TK3R3E08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0033 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TK110E65Z
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOSⅥ Visit Toshiba Electronic Devices & Storage Corporation

    400V P - CHANNEL MOS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 RFR322, PDF

    FQPF2P40

    Contextual Info: QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQPF2P40 -400V, FQPF2P40 PDF

    p-channel 200V

    Abstract: FQP2P40
    Contextual Info: QFET TM FQP2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQP2P40 -400V, p-channel 200V FQP2P40 PDF

    FQP2P40

    Contextual Info: QFET TM FQP2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQP2P40 -400V, FQP2P40 PDF

    FQD2P40

    Contextual Info: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQU2P40TU O-251 FQU2P40 PDF

    Contextual Info: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQU2P40 PDF

    Contextual Info: QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQB2P40 FQI2P40 -400V, FQI2P40TU O-262 PDF

    FQB2P40

    Abstract: FQI2P40
    Contextual Info: QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQB2P40 FQI2P40 -400V, FQI2P40 PDF

    FQD2P40

    Abstract: FQU2P40
    Contextual Info: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQU2P40 PDF

    Contextual Info: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQD2P40TF O-252 FQD2P40TM PDF

    FQD2P40

    Abstract: FQU2P40
    Contextual Info: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQU2P40 PDF

    P-Channel mosfet 400v to220

    Contextual Info: FQP2P40 June 2000 QFET TM FQP2P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP2P40 -400V, O-220 P-Channel mosfet 400v to220 PDF

    FQG4904

    Abstract: 40v N- and P-Channel dip
    Contextual Info: TM FQG4904 400V Dual N & P-Channel MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQG4904 -400V, FQG4904 40v N- and P-Channel dip PDF

    Contextual Info: FQP4P40 August 2000 QFET FQP4P40 TM 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP4P40 -400V, PDF

    Contextual Info: FQPF2P40 June 2000 QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQPF2P40 -400V, PDF

    400v p-channel mosfet

    Abstract: FQP4P40 P-Channel mosfet 400v to220
    Contextual Info: FQP4P40 August 2000 QFET TM FQP4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP4P40 -400V, 400v p-channel mosfet FQP4P40 P-Channel mosfet 400v to220 PDF

    FQPF4P40

    Contextual Info: FQPF4P40 August 2000 QFET TM FQPF4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQPF4P40 -400V, FQPF4P40 PDF

    FQD4P40

    Abstract: FQU4P40
    Contextual Info: FQD4P40 / FQU4P40 August 2000 QFET TM FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQD4P40 FQU4P40 -400V, FQU4P40 PDF

    FQB4P40

    Abstract: FQI4P40
    Contextual Info: FQB4P40 / FQI4P40 August 2000 QFET TM FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB4P40 FQI4P40 -400V, FQI4P40 PDF

    Contextual Info: FQB2P40 / FQI2P40 June 2000 QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB2P40 FQI2P40 -400V, PDF

    FQD4P40

    Abstract: FQU4P40
    Contextual Info: FQD4P40 / FQU4P40 January 2009 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD4P40 FQU4P40 -400V, FQU4P40 PDF

    Contextual Info: FQD4P40 / FQU4P40 January 2009 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQD4P40 FQU4P40 -400V, PDF

    400v p-channel mosfet

    Contextual Info: FQB4P40 / FQI4P40 August 2000 QFET TM FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQB4P40 FQI4P40 -400V, FQB4P40TM O-263 400v p-channel mosfet PDF

    Contextual Info: FQB4P40 / FQI4P40 August 2000 QFET TM FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQB4P40 FQI4P40 -400V, FQI4P40 FQI4P40TU O-262 PDF