400V P-CHANNEL IGBT Search Results

12N50E

Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
Contextual Info: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.

20N50E1

Abstract: 20N50C g15n50c1 20N50C1 15N50C 15N50C1 15n50e1 20n40c G20N50C1 G15N50E1
Contextual Info: m U A Q D ie lÜ HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Packages Features H G TH -TY P E S JE D E C TO -218A C • 15A and 20A, 400V and 500V EMrTTER • V CE ON 2 -5 V COLLECTOR • Tp 1jjs, 0.5(is

RE26A

Contextual Info: Data Sheet No. PD-6.086A International I O R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features Floating channel designed for bootstrap VOFFSET 400V max. lo+/- 2A/2A VOUT 1 0 -2 0 V ton/off ty p . 120 & 94 ns Delay Matching 10 ns

Diode LT 443

Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
Contextual Info: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.

Contextual Info: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage

Contextual Info: International IQ R Rectifier PD-9.1442 IRGCH40SE TARGET IRGCH40SE IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE(on) C ollector-to-Em itter Saturation V oltage

Contextual Info: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V

reverse phase control igbt dimmer schematic

Abstract: SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor
Contextual Info: AN1491 APPLICATION NOTE IGBT BASICS M. Aleo mario.aleo@st.com 1. INTRODUCTION. IGBTs (Insulated Gate Bipolar Transistors) combine the simplicity of drive and the excellent fast switching capability of the MOSFET structure with the ability to handle high current values typical of a

g6n50e

Abstract: HGTD6N50E1S G6N40E G6N50 flange terminal 25C1 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1
Contextual Info: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A R R IS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Packages Features HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EM ITTER • T f a l l 1 1 -0 ^3

Contextual Info: PD-9.1426 International IO R Rectifier IRGCC40UE IRGCC40UE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) C ollector-to-Em itter Saturation Voltage

Contextual Info: International IQ R Rectifier PD-9.1440 IRGCH20SE TARGET IRGCH20SE IGBT Die in Wafer Form 1200 V Size 2 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE (on) Collector-to-Em itter Saturation Voltage

Contextual Info: PD-9.1430 International lö R Rectifier IRGCC30FE TARGET IRGCC30FE IGBT Die in Wafer Form 600 V Size 3 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) V c E (o n ) P a ra m e te r Collector-to-Em itter Saturation Voltage

Contextual Info: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.

irgpc50m

Contextual Info: PD-9.1423 International IQ R Rectifier IRGCC50ME TARGET IRGCC50ME IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5” Wafer Electrical Characteristics Wafer Form Param eter VCE (on) Description Guaranteed (Min/Max) Coliector-to-Emitter Saturation Voltage

Contextual Info: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.

Contextual Info: International is s r Rectifier pd-9.«3i IRGCC20UE TARGET IRGCC20UE IGBT Die in Wafer Form 600 V Size 2 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (M in/M ax) V ce (on) Parameter Collector-to-Emitter Saturation Voltage

Contextual Info: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter

Contextual Info: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

Contextual Info: International IQ R Rectifier pd-9M 25 IRGCC50FE TARGET IRGCC50FE IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Param eter Collector-to-Emitter Saturation Voltage

Contextual Info: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage

SKM400GB123D

Abstract: SKM400GB128D SKM600GB126D igbt based high frequency inverter MOSFET circuit welding INVERTER rectangular RBSOA inverter welder circuit MOSFET welding INVERTER IGBT welder circuit welder inverter mosfet
Contextual Info: Modern IGBT/FWD chip sets for 1200V applications J. Li, R. Herzer, R. Annacker, B. Koenig Semikron Elektronik GmbH, Sigmundstr. 200, 90431 Nuremberg, Germany Tel. +49.911.6559.159 Fax: +49.911.6559.293 E-mail: li.yi@semikron.com Abstract: In this article two IGBT/FWD chip sets for 1200V applications are introduced. A device with

HIP5500IP

Contextual Info: HIP5500 33 ADVANCE INFORMATION High Voltage 1C Half Bridge Gate Driver May1992 Features Description • 500V Maximum Rating The HIP5500 is a high voltage integrated circuit HVIC half-bridge gate driver for standard power MOSFETs, IGBTs, and the new Harris Buffered MOSFETs. It can be employed in a wide variety of

MT29VZZZAD8DQKSM-053 W ES.9D8

Contextual Info: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

ED26 diode

Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to