400V VOLTAGE REGULATOR Search Results

Contextual Info: A Product Line of Diodes Incorporated FZT658 Green 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • BVCEO > 400V IC = 500mA High Continuous Current ICM = 1A Peak Pulse Current Low Saturation Voltage VCE SAT < 250mV @ 50mA

marking P58

Abstract: FCX558TA transistor p58 sot89 package
Contextual Info: A Product Line of Diodes Incorporated FCX558 400V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA

2N6510

Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Contextual Info: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass

TRANSISTOR MARKING 1d6

Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

Zetex T 705

Abstract: TRANSISTOR MARKING 1d6 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

TS16949

Abstract: ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

g6n50e

Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
Contextual Info: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR

Contextual Info: A Product Line of Diodes Incorporated ZXTP558L 400V PNP High Voltage Transistor in TO92L Features and Benefits Mechanical Data • BVCEO > 400V • Case: TO92L Long Body • Power dissipation PD = 1W • Case Material: Molded Plastic, “Green” Molding Compound.

fmmt558

Abstract: fmmt558ta DS-33101
Contextual Info: A Product Line of Diodes Incorporated FMMT558 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -400V • • IC = -150mA high Continuous Collector Current • Case material: molded plastic. “Green” molding compound. • ICM = -500mA Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green FZT458 400V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 400V Max Continuous Current IC = 300mA Low Saturation Voltage

FMMT458

Abstract: fmmt458ta 400V 100MA NPN SOT23
Contextual Info: A Product Line of Diodes Incorporated FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 400V • Case: SOT23 • IC = 225mA high Continuous Collector Current • UL Flammability Rating 94V-0 • ICM = 1A Peak Pulse Current

G10N50

Abstract: HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S HGTD10N40
Contextual Info: HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs March 1997 Features Packages • 10A, 400V and 500V HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA • VCE ON 2.5V Max. • TFALL ≤1.4µs EMITTER COLLECTOR GATE • Low On-State Voltage

KTA1703

Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1703 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. FEATURES • High Breakdown Voltage. : V Ceo = -400V • Low Collector Saturation Voltage

FZT558

Contextual Info: A Product Line of Diodes Incorporated Green FZT558 400V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA

ZXTP558

Contextual Info: A Product Line of Diodes Incorporated ZXTP558L 400V PNP High Voltage Transistor in TO92L Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > 400V Power dissipation PD = 1W Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

ZXTP558

Abstract: ZXTP558L ZXTP558LSTZ all diodes ratings
Contextual Info: A Product Line of Diodes Incorporated ZXTP558L 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR Features and Benefits Mechanical Data • • • • • • VCEO = 400V Power dissipation PD = 1W Lead, Halogen and Antimony Free, RoHS Compliant Note 1 "Green" Device (Note 2)

FZT558TA

Contextual Info: A Product Line of Diodes Incorporated Green FZT558 400V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA

2SC2552

Abstract: NPN Transistor 1A 400V npn transistors 400V 1A DC DC converter 1A 400V 400V voltage regulator high voltage fast switching npn transistor npn transistors 400V 0.1A transistor Ic 1A datasheet NPN DC DC converter 400V HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2552 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications.

Contextual Info: SEMICONDUCTOR KTA1703 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. FEATURES ・High Breakdown Voltage. : VCEO=-400V ・Low Collector Saturation Voltage : VCE sat =-1V(max.), (IC=-100mA, IB=-10mA)

400V voltage regulator

Abstract: DC DC converter 5v to 400V NPN transistor for switching applications, 400V 2SC2137
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2137 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications.

2SC2139

Abstract: 400V switching transistor 400V voltage regulator npn transistor 400V DC DC converter 5v to 400V NPN transistor for switching applications, 400V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2139 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications.

Contextual Info: A Product Line of Diodes Incorporated ZTX758 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN E-LINE Features Mechanical Data • BVCEO > -400V  Case: E-Line TO-92 Compatible  IC = -0.5A High Continuous Collector Current  Case Material: molded plastic, “Green” Molding Compound

KTA1703

Abstract: to-126 pnp switching transistor -400v DC DC converter 5v to 400V
Contextual Info: SEMICONDUCTOR KTA1703 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. A B D C E F FEATURES ᴌHigh Breakdown Voltage. G : VCEO=-400V H ᴌLow Collector Saturation Voltage DIM MILLIMETERS

400V voltage regulator

Abstract: 2Sc5352 npn transistors 400V 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching