400VJ Search Results

transistor BC 56

Abstract: 2SC4441
Contextual Info: Ordering number: EN 3794 No.3794 _ 2 S C 4 4 4 1 NPN Triple Diffused P lanar Silicon Transistor Very High-Definition Monocuro Display Horizontal Deflection Output Applications Features • High reliability Adoption of HVP process . • High fast.

Contextual Info: V X -D v U -X yf7—MOSFET V X - I SERIES POWER MOSFET O U T L I N E D IM E N S IO N S 2SK2187 F10S50VX2 500V 10A ') - Y 9 'f 7‘ b k 0 i to L ea d type is available. • £ «9 1 R A T IN G S A b s o lu t e Maxim um R a tin g s s£ @ m Item (Tc=25°C)

RV210

Abstract: telefunken ra 200 kf 203
Contextual Info: TELEFUNKEN RV 210 NF-Triode für Endstufen Allgemeine W erte Kathode Material . Heizspannung Heizstrom . . . Oxyd, indirekt geheizt Uf 4,0 Volt etwa 1,6 A If Grenzwerte Anodenkaltspannung . A nodenspannung. Anodenverlustleistung . Kathodenstrom .

Contextual Info: NEC NEC Bectronics , 31 .o ^ s - b it MASK-PROGRAMMABLE NMOS ROM Block Diagram Description The JX.PD231000/M-PD231000-1 are 1,048,576-bit Read­ only Memories utilizing NMOS silicon gate technology. The devices are edge-enabled, organized as 131,072 words by

C4424

Abstract: 2SC4424
Contextual Info: Ordering number: EN 2847 No.2847 2 S C 4 4 2 4 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F eatures . High breakdown voltage, high reliability •Fast switching speed t f : O.lps typ ■WideASO • Adoption of MBIT process

Contextual Info: Ratings and characteristics of Fuji IGBT 1 M B H O 5 D — 1. fat li ne Drawing O 6 O 2. Equivalent c i rcuit C:Collector O A G:Gate O FWD •Ó E:Emitter -i-“ 'i COW NFCTION SATE © COLLECTOR © EMITTER i 3. Absolute maximum ratings Tc=25°C Items