4096K Search Results

DS1250

Abstract: DS1250AB DS1250AB-100 DS1250AB-70 DS1250Y DS1250Y-100 DS1250Y-70 DS9034PC
Contextual Info: DS1250Y/AB 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,

32-PIN

Abstract: 34-PIN DS1250 DS1250AB DS1250Y al229
Contextual Info: D S 1250Y /A B DALLAS DS1250Y/AB 4096K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc • Data is automatically protected during power loss A15 A17 • Directly replaces 512K x 8 volatile static RAM

740-0007

Abstract: EN29GL064 6A000
Contextual Info: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

34-PIN

Abstract: DS1248 DS1251YP DS9034PCX
Contextual Info: DS1251/DS1251P 4096K NV SRAM with Phantom Clock www.dalsemi.com FEATURES PIN ASSIGNMENT Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years =512K x 8 NV SRAM directly replaces volatile static RAM or EEPROM

DS1250W-100

Abstract: DS1250W-100IND DS1250WP-100 DS1250WP-100IND DS9034PC DS9034PCI DS1250 DS1250W
Contextual Info: 19-5648; Rev 12/10 DS1250W 3.3V 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES • •         10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,

DS9034PC

Abstract: DS1250 DS1250W DS1250W-100 DS1250W-100IND DS1250W-150 DS1250WP-100 DS1250WP-100IND
Contextual Info: DS1250W 3.3V 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory

Contextual Info: DS1350W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1350W 3.3V 4096K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is automatically protected during power loss

Contextual Info: DS1350Y/AB PRELIMINARY DS1350Y/AB DALLAS SEMICONDUCTOR 4096K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 512K x 8 volatile static RAM or EEPROM

Contextual Info: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted

Contextual Info: DS1350Y/AB DS1350Y/AB DALLAS SEMICONDUCTOR 4096K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is autom atically protected during power loss

P87/AD

Contextual Info: Ordering number : EN7972 LC875BP4A,LC875BM2A LC875BJ0A,LC875BH4A http://onsemi.com CMOS IC ROM 256K/224K/192K/176K byte, RAM 4096K byte on-chip 8-bit 1-chip Microcontroller Overview The LC875BP4A, LC875BM2A, LC875BJ0A, LC875BH4A is 8-bit single chip microcontroller with the following

Contextual Info: ^EDI EDI8C8512C Electronic Designs Inc. Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS 0.4" Wide DIP Module ; Features The ED18C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed

Contextual Info: DS1650Y/AB DALLAS SEMICONDUCTOR DS1650Y/AB Partitionable 4096K NV SRAM PIN ASSIGNMENT FEATURES •10 years minimum data retention in the absence of external power A 18 I| 1 32 1 A 16 I1 2 31 % A 14 11 3 3 0 1 A 17 A 12 I1 4 291 W E A 7 I1 5 2 8 1 A 13 A 6

h13q

Contextual Info: D S 1 35 0Y /A B DS1350Y/AB DALLAS SEMICONDUCTOR 4096K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss H e *' • Power supply monitor resets processor when V c c

Contextual Info: DS1250W PRELIMINARY DALLAS SEMICONDUCTOR DS1250W 3.3V 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 1 0 years minimum data retention in the absence of external power A18 I | 1 • Data is autom atically protected during power loss 31 11 A15 A14 30 |1 A17

GG13S1

Contextual Info: D S 1251Y DALLAS DS1251Y 4096K NV SRAM with Phantom Clock SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years A18/RST l i • 512K x 8 NV SRAM directly replaces volatile static

AK5324096W

Contextual Info: AK5324096W 4,194,304 Word by 32 Bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK5324096W high density memory module is a CMOS Dynamic RAM organized in 4096K x 32 bit words. The module consists of eight standard 4 Meg x 4 DRAMs in plastic SOJ packages mounted on the front surface of a printed circuit board with a

Contextual Info: DS1251Y DALLAS s e m ic o n d u c to r . DS1251Y 4096K NV SRAM with Phantom Clock FEATURES • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 512K x 8 NV SRAM directly replaces volatile static

pm25lq032

Abstract: PM25LQ032C-BCE
Contextual Info: Pm25LQ032C 32Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Memory Organization - Pm25LQ032C: 4096K x 8 32 Mbit

EN29GL064

Abstract: cFeon cFeon EN
Contextual Info: EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

DS1350AB

Abstract: DS1350AB-100 DS1350AB-70 DS1350Y DS1350Y-100 DS1350Y-70 DS9034PC
Contextual Info: DS1350Y/AB 4096k Nonvolatile SRAM with Battery Monitor www.maxim-ic.com FEATURES § § § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Power supply monitor resets processor when

Contextual Info: ^E D I EDI8M8256C/LP/P Electronic Designs Inc. Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C/LP/P is a 4096K bit CMOS Static RAM based on eight 32Kx8 Static RAMs mounted on a 256Kx8 bit CMOS Static Random Access Memory multi-layered ceramic substrate.

DS1650

Abstract: DS1650AB DS1650Y DS1650Y-70 DS1650Y-100
Contextual Info: DS1650Y/AB DALLAS SEMICONDUCTOR Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 512K x 8 volatile static RAM

DS1350AB

Abstract: DS1350AB-70 DS1350Y DS1350Y-70 DS9034PC DS9034PCI
Contextual Info: 19-5585; Rev 10/10 DS1350Y/AB 4096k Nonvolatile SRAM with Battery Monitor www.maxim-ic.com FEATURES • •           10 years minimum data retention in the absence of external power Data is automatically protected during power