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    40G12 Search Results

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    40G12 Price and Stock

    Infineon Technologies AG IDWD40G120C5XKSA1

    DIODE SIL CARB 1.2KV 110A TO247
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    DigiKey IDWD40G120C5XKSA1 Tube 480 1
    • 1 $16.21
    • 10 $16.21
    • 100 $9.99667
    • 1000 $8.62525
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    Avnet Americas IDWD40G120C5XKSA1 Tube 12 Weeks 240
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    Mouser Electronics IDWD40G120C5XKSA1 4
    • 1 $14.67
    • 10 $13.73
    • 100 $8.63
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    RS IDWD40G120C5XKSA1 Bulk 25 2 Weeks 1
    • 1 $17.57
    • 10 $14.93
    • 100 $12.48
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    TME IDWD40G120C5XKSA1 1
    • 1 $32.81
    • 10 $26.08
    • 100 $23.45
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    Chip1Stop IDWD40G120C5XKSA1 Tube 347
    • 1 $14.6
    • 10 $11.7
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    EBV Elektronik IDWD40G120C5XKSA1 480 13 Weeks 240
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    New Advantage Corporation IDWD40G120C5XKSA1 480 1
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    Infineon Technologies AG IDW40G120C5BFKSA1

    DIODE ARR SIC 1200V 55A TO247-3
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    DigiKey IDW40G120C5BFKSA1 Tube 311 1
    • 1 $16.21
    • 10 $16.21
    • 100 $9.99667
    • 1000 $8.62525
    • 10000 $8.62525
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    Avnet Americas IDW40G120C5BFKSA1 Tube 95 12 Weeks 30
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    IDW40G120C5BFKSA1 Bulk 17 Weeks, 5 Days 1
    • 1 $17.82
    • 10 $17.26
    • 100 $15.55
    • 1000 $14.96
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    Mouser Electronics IDW40G120C5BFKSA1 407
    • 1 $13.54
    • 10 $12.59
    • 100 $8.64
    • 1000 $8.62
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    Newark IDW40G120C5BFKSA1 Bulk 166 1
    • 1 $17.44
    • 10 $16.88
    • 100 $14.58
    • 1000 $13.93
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    Chip1Stop IDW40G120C5BFKSA1 Tube 917
    • 1 $15.2
    • 10 $12.1
    • 100 $10
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    EBV Elektronik IDW40G120C5BFKSA1 13 Weeks 240
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    Mean Well RSDW40G-12

    DC DC CONVERTER 12V 40W
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    DigiKey RSDW40G-12 Bulk 259 1
    • 1 $42.12
    • 10 $42.12
    • 100 $42.12
    • 1000 $42.12
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    Avnet Americas RSDW40G-12 Box 1
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    Mouser Electronics RSDW40G-12 167
    • 1 $49.41
    • 10 $46.9
    • 100 $44.18
    • 1000 $44.11
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    TME RSDW40G-12 1
    • 1 $63.76
    • 10 $48.21
    • 100 $41.92
    • 1000 $41.92
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    Master Electronics RSDW40G-12 50
    • 1 $42.72
    • 10 $40.58
    • 100 $36.62
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    Neutron USA RSDW40G-12 50
    • 1 $150.23
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    Sager RSDW40G-12 1
    • 1 $43.57
    • 10 $39.61
    • 100 $38.12
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    STMicroelectronics STPSC40G12WLY

    AUTOMOTIVE 1200 V, 40A POWER SCH
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    DigiKey STPSC40G12WLY Tube 200 1
    • 1 $23.34
    • 10 $23.34
    • 100 $14.868
    • 1000 $23.34
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    Avnet Americas STPSC40G12WLY Tube 25 Weeks 600
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    • 1000 $14.30715
    • 10000 $13.37168
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    Mouser Electronics STPSC40G12WLY 200
    • 1 $21.89
    • 10 $21.61
    • 100 $13.76
    • 1000 $13.76
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    STMicroelectronics STPSC40G12WLY 200 1
    • 1 $21.45
    • 10 $21.18
    • 100 $13.49
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    STMicroelectronics STPSC40G12WL

    1200 V, 20 A HIGH SURGE SILICON
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    DigiKey STPSC40G12WL Tube 90 1
    • 1 $16.18
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    • 100 $11.464
    • 1000 $11.464
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    Avnet Americas STPSC40G12WL Tube 25 Weeks 600
    • 1 -
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    • 1000 $11.92269
    • 10000 $11.14313
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    Mouser Electronics STPSC40G12WL 188
    • 1 $14.32
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    • 100 $11.47
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    Newark STPSC40G12WL Bulk 200 1
    • 1 $21.78
    • 10 $20.21
    • 100 $17.43
    • 1000 $16.69
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    STMicroelectronics STPSC40G12WL 188 1
    • 1 $14.03
    • 10 $14.03
    • 100 $11.24
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    EBV Elektronik STPSC40G12WL 26 Weeks 30
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    Find more 40G12 price and stock on Findchips.com

    40G12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40G12

    Abstract: ls10 diode
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/65 °C Tcase = 25/65 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 50 / 40


    Original     		PDF

    40G121

    Abstract: GT40G121
    Text: 40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Enhancement mode type • High speed: tf = 0.30 s typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)


    Original     		PDF GT40G121 O-220AB 40G121 GT40G121

    40G12

    Abstract: DIODE 40G12
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/65 °C Tcase = 25/65 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 50 / 40


    Original     		PDF

    40G121

    Abstract: No abstract text available
    Text: 40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Unit: mm Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)


    Original     		PDF GT40G121 O-220AB 40G121

    GT40G121

    Abstract: 40G121 gt40
    Text: 40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Unit: mm Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)


    Original     		PDF GT40G121 O-220AB GT40G121 40G121 gt40