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    40N120 Search Results

    40N120 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TW140N120C
    		Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 20 A, 0.182 Ω@18 V, TO-247 Datasheet
    TRS40N120HB
    		Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, 2 in 1, TO-247 Datasheet

    40N120 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge CGWT40N120F2KAD
    		JCET Group 1200V, 40A IGBT with low Vce(sat), advanced trench and field stop structure, featuring low switching loss, integrated fast soft recovery diode, suitable for solar, UPS, and welding applications. Original PDF
    badge HCKW40N120CS2
    		VANGUARD 1200V 40A IGBT in TO-247 package with low VCEsat of 1.65V, high junction temperature rating up to 175°C, integrated anti-parallel fast recovery diode, and optimized for motor and fan drivers. Original PDF
    badge HCKW40N120BH1
    		VANGUARD 1200V 40A IGBT with Trench-FS technology, low Vcesat of 1.85V, integrated fast recovery diode, TO-247 package, suitable for high-frequency switching applications such as UPS, PV, and SMPS. Original PDF
    badge HCKW40N120H1
    		VANGUARD 1200V 40A IGBT with Trench-FS technology, low Vcesat of 1.85V, integrated fast recovery diode, TO-247 package, suitable for high-frequency switching applications such as UPS, industrial welding, and SMPS. Original PDF
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    40N120 Price and Stock

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    onsemi NTH4L040N120M3S

    SILICON CARBIDE (SIC) MOSFET ELI
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    DigiKey NTH4L040N120M3S Tube 2,095 1
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    onsemi NTHL040N120SC1

    SICFET N-CH 1200V 60A TO247-3
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    onsemi NTBG040N120M3S

    SILICON CARBIDE (SIC) MOSFET - E
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    onsemi NTC040N120SC1

    SIC MOS WAFER SALES 40MOHM 1200V
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    Infineon Technologies AG IKW40N120CS7XKSA1

    IGBT TRENCH FS 1200V 82A TO247-3
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    40N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    40N120IHR

    Contextual Info: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		NGTB40N120IHRWG NGTB40N120IHR/D 40N120IHR PDF