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    40N65 Search Results

    40N65 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TK040N65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 57 A, 0.04 Ohm@10V, TO-247 Datasheet

    40N65 Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge HCKW40N65H2
    		VANGUARD 650V 40A IGBT with low VCE(sat) of 1.45V, high-speed soft switching, integrated fast recovery diode, and positive temperature coefficient, suitable for high-frequency applications in power, PV, welding, and PFC systems. Original PDF
    badge CGWT40N65F2KAD
    		JCET Group 650V, 40A IGBT with low Vce(sat), high-speed switching, and integrated fast soft-recovery diode in TO-247 package, suitable for UPS, solar inverters, EV chargers, and power storage applications. Original PDF
    badge CXG40N65HSEK
    		CREATEK Microelectronics 650V 40A IGBT in TO-247 package with field stop technology, featuring low VCE(sat) of 1.7V at 40A, positive temperature coefficient, square RBSOA, and integrated gate resistor, suitable for motor drives, UPS, and inverter applications. Original PDF
    badge CXG40N65HSZU
    		CREATEK Microelectronics 650V 40A IGBT in TO-247 package with Field Stop technology, featuring VCE(sat) of 2.2V at 40A, 10μs short circuit capability, positive temperature coefficient, and integrated gate resistor. Original PDF
    badge CXG40N65HS
    		CREATEK Microelectronics 650V 40A IGBT in TO-247 package with Field Stop technology, featuring low VCE(sat) of 1.7V at 40A, positive temperature coefficient, square RBSOA, and integrated gate resistor for motor drives, UPS, and inverter applications. Original PDF
    badge CXG40N65HSEU
    		CREATEK Microelectronics 650V 40A IGBT in TO-247 package with 2.3V typical VCE(sat) at 40A, featuring field stop technology, 10μs short circuit capability, positive temperature coefficient, and low switching losses for motor drives, UPS, and inverter applications. Original PDF
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    40N65 Price and Stock

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    Infineon Technologies AG AIKB40N65DH5ATMA1

    IGBT NPT 650V 40A TO263-3-2
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    Infineon Technologies AG AIKB40N65DF5ATMA1

    IGBT NPT 650V 40A TO263-3-2
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    Infineon Technologies AG IGP40N65H5XKSA1

    IGBT 650V 74A TO220-3
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    onsemi NVH4L040N65S3F

    MOSFET N-CH 650V 65A TO247-4
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    Infineon Technologies AG IKW40N65ES5XKSA1

    IGBT TRENCH 650V 79A TO247-3
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    40N65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    40N25

    Abstract: 100N45 60N652 0101T photron
    Contextual Info: CHIP SIZE mil wafer form chip form IR@VR (mA@V) 7,081 40x40 38.8+/-0.5 ≦0.2@23 ≦0.44@1 S40CT1 40N451 7,081 40x40 38.8+/-0.5 ≦0.2@43 ≦0.50@1 S40CT1 40N651 7,081 40x40 38.8+/-0.5 ≦0.2@63 ≦0.65@1 S40CT1 50N251 4,450 50x50 48.8+-/0.5 ≦0.2@23 ≦0.42@1


    Original     		40N251 40N451 40N651 50N251 50N451 60N252 60N452 60N652 66N253 66N453 40N25 100N45 0101T photron PDF

    Contextual Info: 40N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		NGTB40N65FL2WG NGTB40N65FL2W/D PDF

    Contextual Info: 40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N65IHL2WG NGTB40N65IHL2W/D PDF